BCP69T1G [ONSEMI]

PNP Silicon Epitaxial Transistor; PNP硅外延晶体管


型号：	BCP69T1G
厂家：	ONSEMI
描述：	PNP Silicon Epitaxial Transistor PNP硅外延晶体管晶体晶体管
文件：	总4页 (文件大小：101K)
中文：	中文翻译
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BCP69T1

PNP Silicon

Epitaxial Transistor

This PNP Silicon Epitaxial Transistor is designed for use in low

voltage, high current applications. The device is housed in the

SOT−223 package, which is designed for medium power surface

mount applications.

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Features

MEDIUM POWER

PNP SILICON

HIGH CURRENT

TRANSISTOR

• High Current: I = −1.0 A

• The SOT−223 Package can be soldered using wave or reflow.

• SOT−223 package ensures level mounting, resulting in improved

thermal conduction, and allows visual inspection of soldered joints.

The formed leads absorb thermal stress during soldering, eliminating

the possibility of damage to the die.

SURFACE MOUNT

• NPN Complement is BCP68

• Pb−Free Package is Available

COLLECTOR 2,4

BASE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Symbol Value

Unit

Vdc

Adc

EMITTER 3

−20

−25

−5.0

−1.0

CEO

CBO

EBO

MARKING

DIAGRAM

Total Power Dissipation @ T = 25°C (Note 1)

Derate above 25°C

1.5

mW/°C

AYW

CEG

SOT−223 (TO−261)

CASE 318E

Operating and Storage Temperature Range

T , T

−65 to

150

°C

stg

STYLE 1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CE = Specific Device Code

= Assembly Location

= Year

= Work Week

Thermal Resistance − Junction−to−Ambient

83.3

°C/W

(Surface Mounted)

Lead Temperature for Soldering,

0.0625 in from case

Time in Solder Bath

260

°C

= Pb−Free Package

(Note: Microdot may be in either location)

Sec

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

ORDERING INFORMATION

†

Device

Package

Shipping

BCP69T1

SOT−223

1000 / Tape & Reel

BCP69T1G

SOT−223

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

October, 2008 − Rev. 8

BCP69T1/D

BCP69T1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (I = −100 mAdc, I = 0)

−25

−20

−5.0

−

Vdc

(BR)CES

(BR)CEO

(BR)EBO

Collector−Emitter Breakdown Voltage (I = −1.0 mAdc, I = 0)

Emitter−Base Breakdown Voltage (I = −10 mAdc, I = 0)

−

Vdc

Collector−Base Cutoff Current (V = −25 Vdc, I = 0)

CBO

−10

mAdc

Emitter−Base Cutoff Current (V = −5.0 Vdc, I = 0)

EBO

−

ON CHARACTERISTICS

DC Current Gain

−

(I = −5.0 mAdc, V = −10 Vdc)

−

375

−

(I = −500 mAdc, V = −1.0 Vdc)

(I = −1.0 Adc, V = −1.0 Vdc)

Collector−Emitter Saturation Voltage (I = −1.0 Adc, I = −100 mAdc)

CE(sat)

−

−0.5

−1.0

Vdc

Base−Emitter On Voltage (I = −1.0 Adc, V = −1.0 Vdc)

BE(on)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

−

MHz

(I = −10 mAdc, V = −5.0 Vdc)

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BCP69T1

TYPICAL ELECTRICAL CHARACTERISTICS

300

200

100

= -10 V

= -1.0 V

T = 25°C

f = 30 MHz

-10

-100

-1000

-10

-100

-1000

I , COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

Figure 2. Current Gain Bandwidth Product

160

120

-1.0

-ꢀ0.8

T = 25°C

@ I /I = 10

C B

(BE)sat

-ꢀ0.6

-ꢀ0.4

@ V = -1.0 V

(BE)on

-ꢀ0.2

@ I /I = 10

C B

(CE)sat

Cob

-1.0

-10

-100

-1000

-ꢀ5.0

-1.0

-ꢀ2.0

-1.5

-ꢀ3.0

-ꢀ2.0

-ꢀ4.0

-ꢀ2.5

-ꢀ5.0

I , COLLECTOR CURRENT (mA)

V , REVERSE VOLTAGE (VOLTS)

Figure 3. Saturation and “ON” Voltages

Figure 4. Capacitances

10 ms

100 ms

1 s

Thermal Limit

1 ms

1.0

ꢀ0.1

Single Pulse Test

@ T = 25°C

0.01

0.1

1.0

100

, COLLECTOR-EMITTER VOLTAGE (V)

Figure 5. Safe Operating Area

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BCP69T1

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE M

NOTES:

ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

ꢁꢂ2. CONTROLLING DIMENSION: INCH.

MILLIMETERS

INCHES

NOM

0.064

0.002

0.030

0.121

0.012

0.256

0.138

0.091

0.037

0.069

0.276

−

DIM

MIN

1.50

0.02

0.60

2.90

0.24

6.30

3.30

2.20

0.85

1.50

6.70

0°

NOM

1.63

0.06

0.75

3.06

0.29

6.50

3.50

2.30

0.94

1.75

7.00

−

MAX

1.75

0.10

0.89

3.20

0.35

6.70

3.70

2.40

1.05

2.00

7.30

10°

MIN

0.060

0.001

0.024

0.115

0.009

0.249

0.130

0.087

0.033

0.060

0.264

0°

MAX

0.068

0.004

0.035

0.126

0.014

0.263

0.145

0.094

0.041

0.078

0.287

10°

STYLE 1:

0.08 (0003)

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

SOLDERING FOOTPRINT

3.8

0.15

2.0

0.079

6.3

0.248

2.3

0.091

2.3

0.091

2.0

0.079

inches

1.5

0.059

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

BCP69T1/D

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BCP69T1G [ONSEMI]

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