BCP69T3 [ONSEMI]

1A, 20V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, TO-261, 4 PIN;
BCP69T3
型号: BCP69T3
厂家: ONSEMI    ONSEMI
描述:

1A, 20V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, TO-261, 4 PIN

光电二极管 晶体管
文件: 总4页 (文件大小:117K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCP69T1G, NSVBCP69T1G  
PNP Silicon  
Epitaxial Transistor  
This PNP Silicon Epitaxial Transistor is designed for use in low  
voltage, high current applications. The device is housed in the  
SOT223 package, which is designed for medium power surface  
mount applications.  
http://onsemi.com  
Features  
High Current: I = 1.0 A  
The SOT223 Package Can Be Soldered Using Wave or Reflow.  
SOT223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die.  
MEDIUM POWER  
PNP SILICON  
HIGH CURRENT  
TRANSISTOR  
C
SURFACE MOUNT  
NPN Complement is BCP68  
AECQ101 Qualified and PPAP Capable  
COLLECTOR 2,4  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
BASE  
1
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
MARKING  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current  
Symbol Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
DIAGRAM  
4
V
CEO  
V
CBO  
V
EBO  
20  
25  
5.0  
1.0  
1
2
AYW  
3
CEG  
SOT223 (TO261)  
CASE 318E  
G
I
C
STYLE 1  
Total Power Dissipation @ T = 25°C (Note 1)  
P
D
1.5  
12  
W
mW/°C  
A
Derate above 25°C  
CE = Specific Device Code  
Operating and Storage Temperature Range  
T , T  
65 to  
°C  
J
stg  
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
150  
THERMAL CHARACTERISTICS  
Characteristic  
= PbFree Package  
Symbol  
Max  
Unit  
(*Note: Microdot may be in either location)  
Thermal Resistance JunctiontoAmbient  
(Surface Mounted)  
R
83.3  
°C/W  
q
JA  
ORDERING INFORMATION  
Lead Temperature for Soldering,  
0.0625 in from case  
Time in Solder Bath  
T
L
260  
10  
°C  
Device  
Package  
Shipping  
s
BCP69T1G  
SOT223  
(PbFree)  
1000 / Tape & Reel  
1000 / Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.  
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.  
NSVBCP69T1G SOT223  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 11  
BCP69T1/D  
 
BCP69T1G, NSVBCP69T1G  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristics  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage (I = 100 mAdc, I = 0)  
V
25  
20  
5.0  
Vdc  
Vdc  
C
E
(BR)CES  
(BR)CEO  
(BR)EBO  
CollectorEmitter Breakdown Voltage (I = 1.0 mAdc, I = 0)  
V
V
C
B
EmitterBase Breakdown Voltage (I = 10 mAdc, I = 0)  
Vdc  
E
C
CollectorBase Cutoff Current (V = 25 Vdc, I = 0)  
I
CBO  
10  
10  
mAdc  
mAdc  
CB  
E
EmitterBase Cutoff Current (V = 5.0 Vdc, I = 0)  
I
EBO  
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
C
h
FE  
(I = 5.0 mAdc, V = 10 Vdc)  
50  
85  
60  
375  
CE  
(I = 500 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 1.0 Adc, V = 1.0 Vdc)  
C
CE  
CollectorEmitter Saturation Voltage (I = 1.0 Adc, I = 100 mAdc)  
V
CE(sat)  
0.5  
1.0  
Vdc  
Vdc  
C
B
BaseEmitter On Voltage (I = 1.0 Adc, V = 1.0 Vdc)  
V
BE(on)  
C
CE  
DYNAMIC CHARACTERISTICS  
CurrentGain Bandwidth Product  
f
T
60  
MHz  
(I = 10 mAdc, V = 5.0 Vdc)  
C
CE  
TYPICAL ELECTRICAL CHARACTERISTICS  
300  
400  
V
CE  
= 1 V  
150°C  
200  
300  
200  
25°C  
100  
70  
V
= -10 V  
CE  
T = 25°C  
J
f = 30 MHz  
55°C  
100  
0
50  
30  
-10  
-100  
I , COLLECTOR CURRENT (mA)  
-1000  
0.001  
0.01  
0.1  
1
10  
C
I , COLLECTOR CURRENT (A)  
C
Figure 1. DC Current Gain  
Figure 2. Current Gain Bandwidth Product  
http://onsemi.com  
2
BCP69T1G, NSVBCP69T1G  
TYPICAL ELECTRICAL CHARACTERISTICS  
0.35  
0.30  
0.25  
1.4  
I /I = 10  
C
B
I /I = 10  
C
B
1.2  
1.0  
0.8  
0.6  
150°C  
0.20  
0.15  
0.10  
55°C  
25°C  
25°C  
150°C  
55°C  
0.4  
0.2  
0.05  
0
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
10  
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 3. Collector Emitter Saturation Voltage  
vs. Collector Current  
Figure 4. Base Emitter Saturation Voltage vs.  
Collector Current  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
V
= 1 V  
CE  
55°C  
25°C  
150°C  
0.3  
0.2  
0.001  
0.01  
0.1  
1
10  
I , COLLECTOR CURRENT (A)  
C
Figure 5. Base Emitter Voltage vs. Collector  
Current  
160  
120  
80  
40  
0
10  
T = 25°C  
10 ms  
J
100 ms  
1 s  
1 ms  
1.0  
Thermal Limit  
C
ib  
ꢀ0.1  
Single Pulse Test  
@ T = 25°C  
Cob  
A
0.01  
C
-ꢀ5.0  
-1.0  
-1.0  
-ꢀ2.0  
-1.5  
-ꢀ3.0  
-ꢀ2.0  
-ꢀ4.0  
-ꢀ2.5  
-ꢀ5.0  
0.1  
1.0  
V , COLLECTOR-EMITTER VOLTAGE (V)  
CE  
10  
100  
ob  
C
ib  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 7. Safe Operating Area  
Figure 6. Capacitances  
http://onsemi.com  
3
BCP69T1G, NSVBCP69T1G  
PACKAGE DIMENSIONS  
SOT223 (TO261)  
CASE 318E04  
ISSUE N  
D
b1  
NOTES:  
ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,  
1994.  
ꢁꢂ2. CONTROLLING DIMENSION: INCH.  
MILLIMETERS  
INCHES  
NOM  
0.064  
0.002  
0.030  
0.121  
0.012  
0.256  
0.138  
0.091  
0.037  
−−−  
4
2
DIM  
A
A1  
b
b1  
c
D
E
e
e1  
L
L1  
MIN  
1.50  
0.02  
0.60  
2.90  
0.24  
6.30  
3.30  
2.20  
0.85  
0.20  
1.50  
6.70  
0°  
NOM  
1.63  
0.06  
0.75  
3.06  
0.29  
6.50  
3.50  
2.30  
0.94  
−−−  
1.75  
7.00  
MAX  
1.75  
0.10  
0.89  
3.20  
0.35  
6.70  
3.70  
2.40  
1.05  
−−−  
2.00  
7.30  
10°  
MIN  
0.060  
0.001  
0.024  
0.115  
0.009  
0.249  
0.130  
0.087  
0.033  
0.008  
0.060  
0.264  
0°  
MAX  
0.068  
0.004  
0.035  
0.126  
0.014  
0.263  
0.145  
0.094  
0.041  
−−−  
H
E
E
1
3
b
e1  
e
0.069  
0.276  
0.078  
0.287  
10°  
C
q
H
E
A
q
0.08 (0003)  
STYLE 1:  
A1  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
L
L1  
4. COLLECTOR  
SOLDERING FOOTPRINT*  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
mm  
inches  
1.5  
0.059  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Phone: 81358171050  
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Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
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Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
BCP69T1/D  

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