BCP69TA [DIODES]
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin;
| 型号： | BCP69TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin 放大器 光电二极管 晶体管 |
| 文件： | 总1页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BCP69
ISSUE 3 FEBRUARY 1996
✪
FEATURES
*
*
For AF drivers and output stages
High collector current and Low VCE(sat)
C
COMPLEMENTARY TYPE BCP68
E
C
PARTMARKING DETAIL
BCP69
BCP69 25
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
-25
-20
-5
UNIT
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
Peak Pulse Current
-2
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
IC
-1
A
Ptot
2
W
°C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO -25
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=-10µA
IC=- 30mA
IE=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
-20
-5
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
-100
-10
nA
µA
V
CB=-25V
VCB=-25V, Tamb=150°C
Emitter Cut-Off Current IEBO
-10
VEB=-5V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
V
IC=-1A, IB=-100mA*
Base-Emitter Turn-On VBE(on)
Voltage
- 0.6
V
V
IC=-5A, VCE=-10V*
IC=-1A, VCE=-1V*
-1.0
Static Forward Current hFE
Transfer Ratio
50
63
IC=-5mA, VCE=-10V*
IC=-500mA, VCE=-1V*
IC=-500mA, VCE=-1V*
BCP69
400
400
BCP69-25 160
250
100
Transition Frequency
fT
MHz
IC=-100mA, VCE=-5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet.
3 - 20
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