BCP71 [INFINEON]
NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current); NPN硅自动对焦功率晶体管（排水开关， RF功率放大级对自动对焦驱动器和输出级高集电极电流）
| 型号： | BCP71 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP 71M
NPN Silicon AF Power Transistor
Preliminary data
4
• Drain switch for RF power amplifier stages
• For AF driver and output stages
• High collector current
5
• Low collector-emitter saturation voltage
3
2
1
VPW05980
Type
Marking Ordering Code Pin Configuration
Package
BCP 71M
PCs Q62702-C2597 1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
32
V
V
V
V
CEO
CBO
EBO
32
5
3
6
A
I
I
I
I
C
CM
B
200
mA
Peak base current
500
BM
1.7
W
Total power dissipation, T ≤ 94 °C
P
T
T
S
tot
j
Junction temperature
Storage temperature
150
°C
-65...+150
stg
Thermal Resistance
1)
Junction ambient
K/W
R
R
≤ 88
≤ 33
thJA
thJS
Junction - soldering point
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm Cu
Semiconductor Group
Semiconductor Group
1
Au -12-1998
1998-11-01
1
BCP 71M
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
32
32
5
-
-
-
-
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I = 10 mA, I = 0
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0
C
B
Emitter-base breakdown voltage
I = 10 µA, I = 0
E
C
Collector cutoff current
= 8 V, I = 0
-
100 nA
I
I
I
V
CB
E
Collector cutoff current
= 8 V, I = 0 , T = 150 °C
-
20
µA
CBO
V
CB
E
A
Emitter cutoff current
= 4 V, I = 0
-
100 nA
EBO
V
EB
C
DC current gain 1)
I = 10 mA, V = 5 V
-
h
FE
25
85
50
-
-
475
-
C
CE
I = 500 mA, V = 1 V
-
C
CE
I = 2 A, V = 2 V
-
C
CE
Collector-emitter saturation voltage1)
I = 2 A, I = 0.2 A
-
0.18
-
V
V
V
V
CEsat
BEsat
C
B
Base-emitter saturation voltage 1)
I = 2 A, I = 0.2 A
-
-
1.2
C
B
AC Characteristics
Transition frequency
-
-
100
80
-
-
MHz
pF
f
T
I = 50 mA, V = 10 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
Semiconductor Group
2
Au -12-1998
1998-11-01
2
BCP 71M
Total power dissipation P = f (T *;T )
tot
A
S
* Package mounted on epoxy
2000
mW
1600
1400
T
S
1200
P
1000
T
A
800
600
400
200
0
°C
0
20
40
60
80
100 120
150
T ,T
A
S
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 2
10 3
K/W
-
/P
10 1
10 2
10 1
10 0
D = 0
0.005
0.01
0.02
0.05
0.1
R
P
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5
10 0
0.005
D = 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Semiconductor Group
Semiconductor Group
3
Au -12-1998
1998-11-01
3
BCP 71M
Collector-emitter saturation voltage
DC current gain h = f (I )
FE
C
I = f (V
), h = 10
V
= 2V
C
CEsat
FE
CE
10 4
mA
10 3
-
100°C
25°C
10 3
10 2
-50°C
100°C
25°C
h
I
-50°C
10 2
10 1
10 1
10 0
10 0
10 0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
10 1
10 2
10 3
10 4
0.50
mA
V
I
C
V
CEsat
Base-emitter saturation voltage
Collector current I = f (V )
C
BE
I = f (V
), h = 10
FE
V
= 2V
C
BEsat
CE
10 4
mA
10 4
mA
10 3
10 3
10 2
10 1
10 0
-50°C
25°C
100°C
-50°C
25°C
I
I
10 2
100°C
10 1
10 0
0.0
V
V
0.2
0.4
0.6
0.8
1.0
1.3
0.0
0.2
0.4
0.6
0.8
1.0
1.3
BE
V
V
BEsat
Semiconductor Group
Semiconductor Group
4
Au -12-1998
1998-11-01
4
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