BCP72 [INFINEON]
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain); PNP硅自动对焦功率晶体管（对于自动对焦驱动器和输出级高集电极电流高电流增益）
| 型号： | BCP72 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain) |
| 文件： | 总3页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP 72
PNP Silicon AF Power Transistor
Preliminary data
• For AF driver and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
Type
Marking Ordering Code Pin Configuration
PAs Q62702- 1 = E 2 = C 3 = E 4 = B 5 = C
Package
BCP 72
SOT-23-5
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
V
V
V
15
V
CEO
CBO
EBO
15
5
I
I
I
I
3
A
C
6
CM
B
200
mA
Peak base current
500
BM
Total power dissipation, T = 99°C
P
tot
1.7
W
S
Junction temperature
Storage temperature
T
T
150
°C
j
- 65 ... + 150
stg
Thermal Resistance
1)
Junction ambient
R
R
≤ 55
K/W
thJA
≤
Junction - soldering point
30
thJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
Dec-04-1996
BCP 72
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I = 100 µA, I = 0
15
15
5
-
-
-
-
-
-
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0
C
B
Base-emitter breakdown voltage
I = 10 µA, I = 0
E
C
Collector cutoff current
I
I
V
CB
V
CB
= 15 V, I = 0 , T = 25 °C
-
-
-
-
100
20
nA
µA
nA
E
A
= 15 V, I = 0 , T = 150 °C
E
A
Emitter cutoff current
= 4 V, I = 0
EBO
V
EB
-
-
100
C
DC current gain
I = 10 mA, V = 5 V
h
-
FE
25
85
50
-
-
-
-
C
CE
I = 500 mA, V = 1 V
475
-
C
CE
I = 1 A, V = 2 V
C
CE
Collector-emitter saturation voltage 1)
I = 2 A, I = 0.2 A
V
V
V
CEsat
-
-
0.15
-
-
C
B
Base-emitter saturation voltage 1)
I = 2 A, I = 0.2 A
mV
BEsat
1.2
C
B
AC Characteristics
Transition frequency
f
MHz
pF
T
I = 50 mA, V = 10 V, f = 100 MHz
-
-
100
50
-
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
µ
1) Pulse test: t < 300 s; D < 2%
Semiconductor Group
2
Dec-04-1996
BCP 72
DC current gain h = f (I )
Collector-emitter saturation voltage
FE
C
V
CE
= 2V
I = f (V
), h = 10
C
CEsat
FE
10 4
mA
10 3
-
100°C
25°C
hFE
IC
10 3
10 2
-50°C
100°C
25°C
-50°C
10 2
10 1
10 0
10 1
10 0
10 0
10 1
10 2
10 3
mA
IC
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
V
0.50
VCEsat
Base-emitter saturation voltage
Collector current I = f (V )
C BE
I = f (V
), h = 10
V = 2V
CE
C
BEsat
FE
10 4
mA
10 4
mA
IC
IC
10 3
10 3
10 2
10 1
-50°C
25°C
-50°C
25°C
100°C
100°C
10 2
10 1
10 0
10 0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
0.2
0.4
0.6
0.8
1.0
V
VBE
1.3
VBEsat
Semiconductor Group
3
Dec-04-1996
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