BCP772_11 [SECOS]

-3 A, -40 V PNP Plastic Encapsulated Transistor; -3 A , -40 V ​​PNP塑料封装晶体管
BCP772_11
型号: BCP772_11
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

-3 A, -40 V PNP Plastic Encapsulated Transistor
-3 A , -40 V ​​PNP塑料封装晶体管

晶体 晶体管
文件: 总2页 (文件大小:225K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCP772  
-3 A, -40 V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
SOT-89  
The BCP772 is designed for using in output stage of  
amplifier, voltage regulator, DC-DC converter and relay driver.  
4
1
2
3
CLASSIFICATION OF hFE(2)  
A
E
C
Product-Rank  
BCP772-Q  
BCP772-P  
160~360  
BCP772-E  
250~500  
Range  
100~200  
B
D
K
F
G
H
MARKING  
Collector  
  
J
L
772  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.60  
4.25  
1.60  
2.60  
Min.  
Max.  
Date Code  
  
A
B
C
D
4.40  
3.94  
1.40  
2.25  
G
H
J
0.40  
0.58  
  
Base  
1.50 TYP  
3.00 TYP  
K
0.32  
0.35  
0.52  
0.44  
PACKAGE INFORMATION  
E
F
1.50  
0.89  
1.85  
1.20  
L
  
Emitter  
Package  
MPQ  
Leader Size  
SOT-89  
1K  
7 inch  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
-40  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-30  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction & Storage Temperature  
-3  
A
PD  
1.2  
W
°C  
TJ, TSTG  
-55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
-40  
Typ.  
Max.  
Unit  
V
Test Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
-
-
-
IC=-100μA  
IC=-1mA  
IE=-10μA  
-30  
-
V
-5  
-
-
-
V
-
-
-1  
-1  
-
μA  
μA  
VCB=-30V  
Emitter cut-off current  
IEBO  
-
30  
100  
100  
-
VBE=-3V  
hFE(1)  
-
VCE=-2V, IC= -20mA  
VCE=-2V, IC= -1A  
VCE=-2V, IC= -1mA  
IC=-2A, IB= -0.2A  
IC=-2A, IB= -0.2A  
DC current gain  
hFE(2)  
160  
-
500  
-
hFE(3)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
-0.3  
-1  
-0.5  
-2  
V
V
-
V
CE=-5V, IC=-20mA,  
Transition frequency  
Output Capacitance  
f T  
-
-
80  
55  
-
-
MHz  
pF  
f=100MHz  
COB  
VCB=-10V, f=1MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
21-Sep-2011 Rev. B  
Page 1 of 2  
BCP772  
-3 A, -40 V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
21-Sep-2011 Rev. B  
Page 2 of 2  

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