BCP8050 [SECOS]
1.5A, 40V NPN Epitaxial Planar Transistor;
| 型号： | BCP8050 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 1.5A, 40V NPN Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：421K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP8050
1.5A, 40V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-89
The BCP8050 is suited for the output stage of audio,
voltage regulator, and relay driver.
4
MARKING
Y1
1
2
3
A
E
C
CLASSIFICATION OF hFE
B
D
BCP8050-C
BCP8050-D
160~300
Product Rank
F
G
H
Range
120~200
K
J
L
Collector
24
Millimeter
Millimeter
PACKAGE INFORMATION
REF.
REF.
Min.
Max.
4.60
4.25
1.60
2.60
Min.
Max.
A
B
C
D
4.40
3.94
1.40
2.30
G
H
J
0.40
0.58
Package
MPQ
1K
Leader Size
1.50 TYP
3.00 TYP
1
Base
K
0.32
0.35
0.52
0.44
SOT-89
7’ inch
E
F
1.50
0.89
1.70
1.2
L
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Unit
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction & Storage temperature
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
40
25
5
1.5
0.5
V
V
V
A
W
°C
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
40
25
5
-
-
-
120
40
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
Unit
V
V
Test Conditions
IC=100µA, IE=0
IC=0.1mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VCE=20V, IE=0
VEB=5V, IC=0
VCE=1V, IC= 0.1A
VCE=1V, IC= 0.8A
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
IB=1A
Collector-base breakdown voltage
Collector-emitter breakdown
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
-
V
0.1
0.1
0.1
300
-
0.5
1.2
1
µA
µA
µA
ICEO
IEBO
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Base-emitter positive favor voltage
Transition frequency
VCE(sat)
VBE(sat)
VBE
VBEF
f T
V
V
V
V
1.55
-
-
100
15
MHz VCE=10V, IC=50mA, f=30MHz
pF VCB=10V, IE=0, f=1MHz
Output Capacitance
COB
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Sep-2014 Rev. B
Page 1 of 2
BCP8050
1.5A, 40V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Sep-2014 Rev. B
Page 2 of 2
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