BCP772 [SECOS]
General Purpose Transistor; 通用晶体管
| 型号： | BCP772 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | General Purpose Transistor |
| 文件： | 总2页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP772
PNP Epitaxial Planar
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
SOT-89
Description
The BCP772 is designed for using in output stage of amplifier,
voltage regulator, DC-DC converter and relay driver.
Millimeter
Millimeter
Min. Max.
3.00 REF.
REF.
REF.
Min.
4.4
Max.
4.6
A
B
C
D
E
F
G
H
I
J
K
L
M
4.05
1.50
1.30
2.40
0.89
4.25
1.70
1.50
2.60
1.20
1.50 REF.
0.40
1.40
0.35
0.52
1.60
0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at TA=25oC (unless otherwise specified)
Parameter
Collector to Base Voltage
Symbol
Ratings
Unit
VCBO
-40
-30
V
V
V
A
VCEO
VEBO
IC
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current
-
-
5.
3
(TC=25o
1.2
Total Power Dissipation
PD
)
C
W
oC
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
-40
-30
Max
Test Conditions
IC=-100µA
IC=-1mA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
-
-
-
-
-
-
-
V
V
IE=-10µA
VCB=-30V
-5
-
-1
-1
uA
Emitter-Base Cutoff Current
Collector Saturation Voltage
IEBO
-
-0.3
-1
-
-
-
uA
V
VBE=-3 V
-0.5
-2
VCE(sat)
VBE(sat)
hFE1
IC=- 2 A,IB=-0.2A
Base Satruation Voltage
DC Current Gain
V
IC=-
2A,IB=-0.2A
-
-
30
VCE=-2V, IC=-20mA
VCE=-2 V, IC=-1 A
500
hFE2
100
160
80
Gain-Bandwidth Product
Output Capacitance
-
-
-
-
fT
MH
VCE=-5V, IC=-20mA,f=100MHz
VCB=-10V, f=1MHz
z
pF
Cob
55
Classification of hFE2
E
Rank
Q
P
100~200
160~320
Range
250~500
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
BCP772
PNP Epitaxial Planar
Elektronische Bauelemente
General Purpose Transistor
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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