PHN1013 [NXP]
N-channel enhancement mode MOS transistor; N沟道增强型MOS晶体管
| 型号： | PHN1013 |
| 厂家： | 
NXP |
| 描述： | N-channel enhancement mode MOS transistor |
| 文件： | 总8页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PHN1013
N-channel enhancement mode
MOS transistor
1997 Jun 20
Objective specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
FEATURES
DESCRIPTION
• Very low on-state resistance.
N-channel enhancement mode logic level field-effect
power transistor using ‘trench’ technology, in an 8-pin
plastic SOT96-1 (SO8) package.
APPLICATIONS
• DC to DC converters
• General purpose switching applications.
PINNING - SOT96-1 (SO8)
d
handbook, halfpage
5
4
8
PIN
SYMBOL
DESCRIPTION
source
1
2
3
4
5
6
7
8
s
s
s
g
d
d
d
d
g
source
source
gate
1
s
MAM358
Top view
drain
drain
drain
drain
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VDS
ID
drain-source voltage
drain current (DC)
30
10
V
A
Ptot
RDSon
Tj
total power dissipation
2.5
W
drain-source on-state resistance
junction temperature
VGS = 10 V
13.5
150
mΩ
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS
VDS drain-source voltage
MIN.
MAX.
30
UNIT
−
−
−
−
−
−
−
−
V
VDG
VGS
ID
drain-gate voltage
gate-source voltage
drain current (DC)
RGS = 20 kΩ
30
V
V
A
A
A
±20
10
Tamb = 25 °C; tp ≤ 10 s
amb = 70 °C; tp ≤ 10 s
T
8
IDM
Ptot
peak drain current
Tamb = 25 °C
Tamb = 25 °C
Tamb = 70 °C
50
total power dissipation
2.5
1.6
+150
+150
W
W
°C
°C
Tstg
Tj
storage temperature
−55
−55
operating junction temperature
1997 Jun 20
2
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-a
thermal resistance from junction to ambient minimum footprint; tp ≤ 10 s; note 1
50
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
drain-source breakdown voltage VGS = 0; ID = 250 µA
30
27
2.1
1.4
−
−
−
3
−
−
−
V
V
GS = 0; ID = 250 µA; Tj = −55 °C
−
V
VGSth
gate-source threshold voltage
VDS = VGS; ID = 250 µA
4
V
VDS = VGS; ID = 250 µA; Tj = 150 °C
−
V
V
DS = VGS; ID = 250 µA; Tj = −55 °C
VDS = 30 V; VGS = 0
DS = 30 V; VGS = 0; Tj = 150 °C
VGS = ±10 V; VDS = 0
4.4
V
IDSS
drain-source leakage current
gate leakage current
−
0.05 10
µA
µA
nA
V
−
−
500
100
IGSS
−
10
11
−
RDSon
drain-source on-state resistance VGS = 10 V; ID = 10 A
GS = 10 V; ID = 10 A; Tj = 150 °C
−
13.5 mΩ
26 mΩ
V
−
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
gfs
PARAMETER
forward transconductance
input capacitance
CONDITIONS
MIN. TYP. MAX. UNIT
VDS = 25 V; ID = 10 A
4
−
−
−
−
−
−
8
−
S
Ciss
Coss
Crss
QG
VGS = 0; VDS = 25 V; f = 1 MHz
VGS = 0; VDS = 25 V; f = 1 MHz
VGS = 0; VDS = 25 V; f = 1 MHz
VGS = 5 V; VDD = 24 V; ID = 10 A
VGS = 5 V; VDD = 24 V; ID = 10 A
VGS = 5 V; VDD = 24 V; ID = 10 A
1700 2200 pF
output capacitance
325
214
27
450
260
−
pF
pF
nC
nC
nC
reverse transfer capacitance
total gate charge
QGS
QGD
gate-source charge
gate-drain charge
3.5
15
−
−
Switching times
td(on)
td(off)
tr
turn-on delay time
VGS = 5 V; VDD = 25 V; ID = 10 A;
Rgen = 10 Ω resistive load
−
−
−
−
25
90
75
35
40
ns
ns
ns
ns
turn-off delay time
rise time
VGS = 5 V; VDD = 25 V; ID = 10 A;
Rgen = 10 Ω resistive load
130
125
50
VGS = 5 V; VDD = 25 V; ID = 10 A;
Rgen = 10 Ω resistive load
tf
fall time
VGS = 5 V; VDD = 25 V; ID = 10 A;
Rgen = 10 Ω resistive load
1997 Jun 20
3
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
IDR
IDRM
VSD
PARAMETER
CONDITIONS
Tamb = 25 °C; tp ≤ 10 s
TYP. MAX. UNIT
continuous reverse drain current
pulsed reverse drain current
−
10
50
1.2
−
A
−
A
source-drain diode forward voltage
IF = 10 A; VGS = 0
0.95
1
V
IF = 50 A; VGS = 0
V
trr
reverse recovery time
IF = 10 A; di/dt = −100 A/µs;
50
−
ns
V
GS = −10 V; VR = 25 V
Qrr
reverse recovery charge
IF = 10 A; di/dt = −100 A/µs;
VGS = −10 V; VR = 25 V
0.1
−
µC
1997 Jun 20
4
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
1997 Jun 20
5
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 20
6
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
NOTES
1997 Jun 20
7
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© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
137107/00/01/pp8
Date of release: 1997 Jun 20
Document order number: 9397 750 02452
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