PHN103S [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO ; 晶体管| MOSFET | N沟道| 25V V（ BR ） DSS | 6A I（ D） | SO\n
| 型号： | PHN103S |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO
|
| 文件： | 总8页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor & schottky diode
PHN103S
FEATURES
SYMBOL
QUICK REFERENCE DATA
• MOSFET + Schottky diode in the
same package
• Low threshold voltage
• Extremely fast switching
• Logic level compatible
• Surface mount package
VDS = 25 V
d
k
ID = 5.8 A
R
DS(ON) ≤ 35 mΩ (VGS = 10 V)
g
RDS(ON) ≤ 60 mΩ (VGS = 4.5 V)
s
a
VF (schottky) < 0.55 V
GENERAL DESCRIPTION
PINNING
SOT96-1
8
7
6
5
N-channel enhancement mode
field-effect transistor and schottky
diode in the same plastic envelope.
The MOSFET uses ’trench’
technology to achieve low on-state
resistance.
PIN
DESCRIPTION
anode (a)
source (s)
1,2
3
4
gate (g)
Applications:-
pin 1 index
• d.c. to d.c. converters
• motor drivers
• relay and actuator drivers
5,6
7,8
drain (d)
cathode (k)
1
2
3
4
The PHN103S is supplied in the
SOT96-1 (SO8) surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
Repetitive peak drain-source
voltage
Tj = 25 ˚C to 150˚C
-
25
V
VDS
VDGR
VGS
ID
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current1
-
-
-
-
-
-
-
-
25
25
± 20
5.8
4.6
23
2
1.3
150
V
V
V
A
A
RGS = 20 kΩ
Ta = 25 ˚C
Ta = 70 ˚C
Ta = 25 ˚C
Ta = 25 ˚C
Ta = 70 ˚C
IDM
Ptot
Drain current (pulse peak value)
Total power dissipation
A
W
W
˚C
Tstg, Tj
Storage & operating temperature
- 65
1 Surface mounted on FR4 board, t ≤ 10 sec
September 1999
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor & schottky diode
PHN103S
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-a MOSFET or schottky diode
CONDITIONS
TYP.
MAX.
UNIT
Surface mounted, FR4 board, t ≤ 10 sec
-
62.5
K/W
thermal resistance junction
to ambient
MOSFET or schottky diode
thermal resistance junction
to ambient
Rth j-a
Surface mounted, FR4 board
150
-
K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V; ID = 10 µA;
Tj = -55˚C
25
22
-
-
-
-
V
V
VGS(TO)
Gate threshold voltage
VDS = VGS; ID = 1 mA
Tj = 150˚C
1
0.4
2.1
-
-
-
V
V
Tj = -55˚C
-
-
-
-
-
-
-
-
3.2
35
60
60
100
10
100
V
RDS(ON)
Drain-source on-state
resistance
VGS = 10 V; ID = 5 A
30
50
50
10
0.05
1
mΩ
mΩ
mΩ
nA
µA
µA
V
GS = 4.5 V; ID = 2.5 A
VGS = 10 V; ID = 5 A; Tj = 150˚C
Gate source leakage current VGS = ±20 V; VDS = 0 V
IGSS
IDSS
Zero gate voltage drain
current
VDS = 25 V; VGS = 0 V;
Tj = 150˚C
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 6 A; VDD = 15 V; VGS = 10 V
-
-
-
17
2.9
4.1
-
-
-
nC
nC
nC
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 20 V; RD = 18 Ω;
VGS = 10 V; RG = 6 Ω
Resistive load
-
-
-
-
8
-
-
-
-
ns
ns
ns
ns
11
31
17
Ld
Ls
Internal drain inductance
Internal source inductance
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
-
-
2.5
5
-
-
nH
nH
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 20 V; f = 1 MHz
-
-
-
650
320
130
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IS
Continuous source diode
current
Ta = 25 ˚C
-
-
2
A
ISM
VSD
Pulsed source diode current
Diode forward voltage
-
-
-
23
1
A
V
IF = 1.25 A; VGS = 0 V
0.75
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 1.25 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 25 V
-
-
35
24
-
-
ns
nC
September 1999
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor & schottky diode
PHN103S
SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IF
IFRM
IR
Continuous forward current
Repetitive peak forward current
Reverse leakage current
Ta = 25 ˚C
-
-
-
-
-
-
-
-
-
3
23
1.0
10
0.6
0.55
-
A
A
mA
mA
V
V
pF
VR = 25 V
0.2
5
0.4
0.3
120
Tj = 100˚C
VF
Cd
Forward voltage
IF = 2.5 A; VGS = 0 V
IF = 2.5 A; VGS = 0 V, Tj = 100 ˚C
VR = 5 V, f = 1MHz, Tj = 25˚C to
150˚C
Junction capacitance
Normalised Power Derating, Ptot (%)
100
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
100
10
90
80
70
60
50
40
30
20
10
0
tp = 10 us
100 us
1 ms
10 ms
100 ms
1
0.1
0.01
10 s
0
20
40
60
80
100
120
140
160
0.1
1
10
100
Ambient temperature, Ta (C)
Drain-Source Voltage, VDS (V)
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Ta)
Fig.3. Safe operating area. Ta = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Normalised Current Derating, ID (%)
120
100
80
60
40
20
0
Zth j-a (K/W)
100
D = 0.5
0.2
10
1
0.1
0.05
0.02
P
D = tp/T
single pulse
D
tp
0.1
T
0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
0
20
40
60
80
100
120
140
160
Ambient temperature, Ta (C)
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Ta); conditions: VGS ≥ 4.5 V
Fig.4. Transient thermal impedance; MOSFET.
Zth j-a = f(t); parameter D = tp/T
September 1999
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor & schottky diode
PHN103S
Drain current, ID (A)
10
9
8
7
6
5
4
3
2
1
0
Transient Thermal Impedance, Zth j-a (K/W)
SCHOTTKY
100
10
VDS > ID X RDS(ON)
Single pulse
1
P
D
150 C
Tj = 25 C
tp
0.1
0.01
t
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
1E-06
1E-05
1E-04
1E-03
pulse width, tp (s)
1E-02
1E-01 1E+00 1E+01
Gate-source voltage, VGS (V)
Fig.5. Transient thermal impedance; Schottky Diode.
Zth j-a = f(t)
Fig.8. Typical transfer characteristics.
ID = f(VGS)
Transconductance, gfs (S)
Drain Current, ID (A)
10
9
8
7
6
5
4
3
2
1
0
VDS > ID X RDS(ON)
Tj = 25 C
5
4.5 V
VGS = 3.4 V
Tj = 25 C
150 C
4
3.2 V
10V
3
3 V
2
2.8 V
2.6 V
1
2.4 V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
Drain current, ID (A)
Drain-Source Voltage, VDS (V)
Fig.6. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.9. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
a
Normalised RDS(ON) = f(Tj)
Drain-Source On Resistance, RDS(on) (Ohms)
0.5
2
3V
VGS = 3.4 V
2.8V
3.2V
0.45
0.4
1.5
1
0.35
0.3
Tj = 25 C
0.25
0.2
0.15
0.1
0.5
4.5V
10V
0.05
0
0
0
1
2
3
4
5
-50
0
50
Tj / C
100
150
Drain Current, ID (A)
Fig.7. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Fig.10. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
September 1999
4
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor & schottky diode
PHN103S
VGS(TO) / V
5
4
3
2
1
0
Gate-source voltage, VGS (V)
15
14
13
12
11
10
9
ID = 6 A
Tj = 25 C
VDD = 15 V
typ.
8
7
6
5
4
3
2
1
min.
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
Gate charge, QG (nC)
Tj / C
Fig.11. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.14. Typical turn-on gate-charge characteristics.
GS = f(QG)
V
Sub-Threshold Conduction
Drain current, ID (A)
Source-Drain Diode Current, IF (A)
VGS = 0 V
100mA
10mA
1mA
10
9
8
7
6
5
4
3
2
1
0
min
typ
150 C
Tj = 25 C
100uA
10uA
1uA
VDS = VGS
Tj = 25 C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
1
2
3
4
5
Drain-Source Voltage, VSDS (V)
Gate-source voltage, VGS (V)
Fig.12. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C
Fig.15. MOSFET source-drain diode characteristics
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Schottky Forward Current,IF(A)
5
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
100
4.5
4
3.5
150 C
3
Tj = 25 C
2.5
2
1.5
1
Ciss
Coss
Crss
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
1
10
100
Schottky Forward Voltage,VF (V)
Drain-Source Voltage, VDS (V)
Fig.13. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.16. Schottky diode characteristics
IF = f(VF); parameter Tj
September 1999
5
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor & schottky diode
PHN103S
Capacitance, Cj (pF)
SCHOTTKY
1000
100
10
0.1
1
10
100
Reverse voltage, VR (V)
Fig.17. Schottky diode typical capacitance, Cj
C = f(VR); f = 1 MHz
September 1999
6
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor & schottky diode
PHN103S
MECHANICAL DATA
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A
)
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
0.25
0.01
0.25
0.1
1.75
0.25
0.01
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
Fig.18. SOT96 surface mounting package.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to Integrated Circuit Packages, Data Handbook IC26.
3. Epoxy meets UL94 V0 at 1/8".
September 1999
7
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor & schottky diode
PHN103S
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1999
8
Rev 1.000
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