PBSS4140DPN [NXP]
40 V low VCEsat NPN/PNP transistor; 40伏的低VCEsat晶体管NPN / PNP晶体管
| 型号： | PBSS4140DPN |
| 厂家： | 
NXP |
| 描述： | 40 V low VCEsat NPN/PNP transistor |
| 文件： | 总12页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS4140DPN
40 V low VCEsat NPN/PNP
transistor
Product specification
2001 Dec 13
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
FEATURES
QUICK REFERENCE DATA
SYMBOL
• 600 mW total power dissipation
• Low collector-emitter saturation voltage
• High current capability
PARAMETER
MAX. UNIT
VCEO
IC
collector-emitter voltage
40
1
V
A
A
−
peak collector current
peak collector current
NPN
• Improved device reliability due to reduced heat
generation
ICM
2
TR1
TR2
RCEsat
−
• Replaces two SOT23 packaged low VCEsat transistors
on same PCB area
PNP
−
−
equivalent on-resistance <500 mΩ
• Reduces required PCB area
• Reduced pick and place costs.
PINNING
PIN
DESCRIPTION
APPLICATIONS
1, 4
2, 5
6, 3
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
• General purpose switching and muting
• LCD backlighting
collector
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
5
6
5
4
4
handbook, halfpage
DESCRIPTION
TR2
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457)
plastic package.
TR1
1
2
3
1
2
3
MARKING
Top view
MAM445
TYPE NUMBER
PBSS4140DPN
MARKING CODE
Fig.1 Simplified outline SC74 (SOT457) and
symbol.
M2
2001 Dec 13
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open emitter
open base
−
−
−
−
−
−
−
40
V
V
V
A
A
A
40
open collector
5
1
ICM
2
IBM
1
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
370
+150
150
+150
mW
°C
−65
−
°C
Tamb
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
600
mW
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
208
K/W
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2001 Dec 13
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 40 V; IE = 0
CB = 40 V; IE = 0; Tj = 150 °C
collector-emitter cut-off current VCE = 30 V; IB = 0
−
−
−
−
−
−
−
−
−
100
50
nA
µA
nA
nA
V
−
ICEO
IEBO
hFE
−
100
100
−
emitter-base cut-off current
DC current gain
VEB = 5 V; IC = 0
−
VCE = 5 V; IC = 1 mA
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
300
−
VCEsat
collector-emitter saturation
voltage
200
250
500
mV
mV
mV
−
−
NPN transistor
hFE
DC current gain
VCE = 5 V; IC = 500 mA
300
200
−
−
900
−
VCE = 5 V; IC = 1 A
−
VBEsat
VBEon
RCEsat
fT
base-emitter saturation voltage IC = 1 A; IB = 100 mA
−
1.2
1.1
V
V
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
VCE = 5 V; IC = 1 A
−
−
IC = 500 mA; IB = 50 mA; note 1
−
260
−
<500 mΩ
VCE =10 V; IC = 50 mA; f = 100 MHz 150
−
MHz
pF
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
10
PNP transistor
hFE
DC current gain
VCE = −5 V; IC = −100 mA
VCE = −5 V; IC = −500 mA
300
250
160
−
−
800
−
−
VCE = −5 V; IC = −1 A
−
−
VBEsat
VBEon
RCEsat
fT
base-emitter saturation voltage IC = −1 A; IB = −50 mA
−
−1.1
−1.0
V
V
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
VCE = −5 V; IC = −1 A
−
−
IC = −500 mA; IB −50 mA; note 1
−
300
−
<500 mΩ
VCE = −10 V; IC = −50 mA;
150
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f =1 MHz
−
−
12
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Dec 13
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD635
MLD642
1000
10
handbook, halfpage
handbook, halfpage
h
FE
800
V
(1)
BE
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
−1
10
0
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
TR1 (NPN); VCE = 5 V.
(1) amb = 150 °C.
TR1 (NPN); VCE = 5 V.
(1) amb = −55 °C.
T
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLD636
MHC126
3
2
10
10
handbook, halfpage
handbook, halfpage
R
V
CEsat
(Ω)
CEsat
(mV)
(1)
2
10
10
(2)
(3)
10
1
(1)
(2)
(3)
−1
10
1
2
3
4
−1
2
3
I
4
1
10
10
10
10
10
1
10
10
10
10
(mA)
I
(mA)
C
C
TR1 (NPN); IC/IB = 10.
(1) amb = 150 °C.
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2001 Dec 13
5
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD637
400
handbook, halfpage
f
T
(MHz)
300
200
100
0
0
200
400
600
800
I
1000
(mA)
C
TR1 (NPN); VCE = 10 V.
Fig.6 Transition frequency as a function of
collector current; typical values.
2001 Dec 13
6
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD639
MLD638
1200
−10
handbook, halfpage
handbook, halfpage
h
FE
V
BE
(V)
(1)
800
(1)
−1
(2)
(2)
(3)
400
(3)
−1
0
10
−10
−1
2
3
4
−1
2
3
I
4
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
C
C
TR2 (PNP); VCE = −5 V.
(1) amb = 150 °C.
TR2 (PNP); VCE = −5 V.
(1) amb = −55 °C.
T
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.7 DC current gain as a function of collector
current; typical values.
Fig.8 Base-emitter voltage as a function of
collector current; typical values.
MLD640
MHC127
3
2
−10
10
handbook, halfpage
handbook, halfpage
R
V
CEsat
(Ω)
CEsat
(mV)
(1)
2
−10
10
(3)
(2)
−10
1
(1)
(2)
(3)
−1
10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
−10
−1
−10
−10
−10
−10
(mA)
I
(mA)
I
C
C
TR2 (PNP); IC/IB = 10.
(1) amb = 150 °C.
TR2 (PNP); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2001 Dec 13
7
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD641
300
handbook, halfpage
f
T
(MHz)
200
100
0
0
−200
−400
−600
−800
(mA)
−1000
I
C
TR2 (PNP); VCE = -10 V.
Fig.11 Transition frequency as a function of
collector current; typical values.
2001 Dec 13
8
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2001 Dec 13
9
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Dec 13
10
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
NOTES
2001 Dec 13
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2001 Dec 13
Document order number: 9397 750 09062
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