PBSS4140T [NXP]
40 V, 1A NPN low VCEsat (BISS) transistor; 40 V ，1 A NPN低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS4140T |
| 厂家： | 
NXP |
| 描述： | 40 V, 1A NPN low VCEsat (BISS) transistor |
| 文件： | 总9页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4140T
40 V, 1A
NPN low VCEsat (BISS) transistor
Product specification
2004 Mar 16
Supersedes data of 2001 Jul 13
Philips Semiconductors
Product specification
40 V, 1A
PBSS4140T
NPN low VCEsat (BISS) transistor
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
• High current capabilities.
SYMBOL
PARAMETER
MAX. UNIT
VCEO
ICM
collector-emitter voltage 40
peak collector current
V
A
• Improved device reliability due to reduced heat
generation.
2
RCEsat
equivalent on-resistance <500 mΩ
APPLICATIONS
PINNING
PIN
• General purpose switching and muting
• LCD backlighting
DESCRIPTION
1
2
3
base
• Supply line switching circuits
emitter
collector
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5140T.
handbook, halfpage
3
3
1
MARKING
TYPE NUMBER
PBSS4140T
MARKING CODE(1)
2
1
2
ZT*
Top view
MAM255
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
NUMBER
NAME
VERSION
PBSS4140T
−
SOT23
2004 Mar 16
2
Philips Semiconductors
Product specification
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
−
−
−
−
−
−
−
−
V
V
V
A
A
A
open base
40
open collector
5
1
ICM
2
IBM
1
Ptot
total power dissipation
T
amb ≤ 25 °C; note 1
amb ≤ 25 °C; note 2
300
450
+150
150
+150
mW
mW
°C
T
Tstg
Tj
storage temperature
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
417
UNIT
K/W
K/W
Rth(j-a)
thermal resistance from junction in free air; note 1
to ambient
in free air; note 2
278
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
2004 Mar 16
3
Philips Semiconductors
Product specification
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 40 V; IE = 0 A
MIN.
TYP.
MAX.
UNIT
nA
ICBO
collector-base cut-off
current
−
−
−
−
−
−
100
50
VCB = 40 V; IE = 0 A; Tamb = 150 °C
µA
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB = 0 A
100
nA
IEBO
hFE
emitter-base cut-off current VEB = 5 V; IC = 0 A
−
−
−
−
−
−
−
−
100
−
nA
DC current gain
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
300
300
200
−
900
−
VCEsat
collector-emitter saturation IC = 100 mA; IB = 1 mA
200
250
500
<500
1.2
mV
mV
mV
mΩ
V
voltage
IC = 500 mA; IB = 50 mA
−
IC = 1 A; IB = 100 mA
−
RCEsat
VBEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
IC = 1 A; IB = 100 mA
−
260
base-emitter saturation
voltage
−
−
VBEon
base-emitter turn-on
voltage
VCE = 5 V; IC = 1 A
−
−
1.1
V
fT
transition frequency
collector capacitance
IC = 50 mA; VCE = 10 V; f = 100 MHz 150
VCB = 10 V; IE = Ie = 0 A; f = 1 MHz
−
−
−
MHz
pF
Cc
−
10
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Mar 16
4
Philips Semiconductors
Product specification
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
MLD660
MLD661
1000
10
handbook, halfpage
handbook, halfpage
h
FE
800
(1)
V
BE
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
−1
10
0
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
VCE = 5 V.
(1) amb = 150 °C.
VCE = 5 V.
T
(1)
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLD662
MLD663
3
2
10
10
handbook, halfpage
handbook, halfpage
V
R
CEsat
CEsat
(Ω)
(mV)
(1)
2
10
10
(3)
(2)
(1)
(3)
(2)
10
1
−1
1
10
2
3
4
−1
−2
−3
−4
1
10
10
10
10
10
1
10
10
10
10
(mA)
I
(mA)
I
C
C
IC/IB = 10.
IC/IB = 10.
(1) amb = 150 °C.
(1)
Tamb = 150 °C.
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2004 Mar 16
5
Philips Semiconductors
Product specification
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
MLD664
400
handbook, halfpage
f
T
(MHz)
300
200
100
0
0
200
400
600
800
I
1000
(mA)
C
VCE = 10 V.
Fig.6 Transition frequency as a function of
collector current.
2004 Mar 16
6
Philips Semiconductors
Product specification
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2004 Mar 16
7
Philips Semiconductors
Product specification
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Mar 16
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/03/pp9
Date of release: 2004 Mar 16
Document order number: 9397 750 12434
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