PBSS4140S,126 [NXP]
PBSS4140S;
| 型号： | PBSS4140S,126 |
| 厂家： | 
NXP |
| 描述： | PBSS4140S 开关 晶体管 |
| 文件： | 总8页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
PBSS4140S
40 V low VCEsat NPN transistor
Product data sheet
2004 Aug 20
Supersedes data of 2001 Nov 27
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140S
FEATURES
QUICK REFERENCE DATA
• High power dissipation (830 mW)
• Ultra low collector-emitter saturation voltage
• 1 A continuous current
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
40
1
V
A
A
• High current switching
ICM
2
• Improved device reliability due to reduced heat
generation.
RCEsat
<500 mΩ
PINNING
APPLICATIONS
PIN
1
DESCRIPTION
• Medium power switching and muting
• Linear regulators
base
2
collector
emitter
• DC/DC converter
3
• LCD back-lighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
1
2
3
handbook, halfpage
2
3
DESCRIPTION
1
NPN low VCEsat transistor in a SOT54 plastic package.
PNP complement: PBSS5140S.
MAM459
MARKING
TYPE NUMBER
PBSS4140S
MARKING CODE
Fig.1 Simplified outline (SOT54) and symbol.
S4140S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
−
−
−
−
−
−
−
V
V
V
A
A
A
open base
40
open collector
5
1
ICM
2
IBM
1
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
830
+150
150
+150
mW
°C
−65
−
°C
Tamb
−65
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
2004 Aug 20
2
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
150
UNIT
Rth j-a
thermal resistance from junction to ambient in free air; note 1
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
VCB = 40 V; IC = 0
MIN.
TYP.
MAX.
UNIT
collector-base cut-off
current
−
−
−
−
−
−
100
50
nA
μA
nA
VCB = 40 V; IC = 0; Tamb = 150 °C
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB = 0
100
IEBO
hFE
emitter-base cut-off current VEB = 5 V; IC = 0
−
−
−
−
−
−
−
−
100
−
nA
DC current gain
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
300
300
200
−
900
−
VCEsat
collector-emitter saturation IC = 100 mA; IB = 1 mA
200
250
500
<500
1.2
mV
mV
mV
mΩ
V
voltage
IC = 500 mA; IB = 50 mA
−
IC = 1 A; IB = 100 mA
−
RCEsat
VBEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
IC = 1 A; IB = 100 mA
−
260
base-emitter saturation
voltage
−
−
VBEon
fT
base-emitter turn-on voltage VCE = 5 V; IC = 1 A
−
−
−
−
1.1
−
V
transition frequency
collector capacitance
IC = 50 mA; VCE = 10 V; f = 100 MHz 150
VCB = 10 V; IE = Ie = 0; f = 1 MHz
MHz
pF
Cc
−
10
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Aug 20
3
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140S
MHC077
MHC078
1000
10
handbook, halfpage
handbook, halfpage
h
FE
V
(1)
BE
800
(V)
600
(2)
1
(1)
(2)
400
(3)
(3)
200
−1
10
10
0
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
VCE = 5 V.
(1) amb = 150 °C.
VCE = 5 V.
T
(1)
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MHC079
MHC080
3
2
10
10
handbook, halfpage
handbook, halfpage
V
R
CEsat
CEsat
(Ω)
(mV)
2
10
10
(1)
(2)
(3)
10
1
(1)
(2)
(3)
−1
10
10
1
2
3
4
−1
2
3
I
4
1
10
10
10
10
1
10
10
10
10
(mA)
I
(mA)
C
C
IC/IB = 10.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2004 Aug 20
4
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140S
MHC081
400
handbook, halfpage
f
T
(MHz)
300
200
100
0
0
200
400
600
800
I
1000
(mA)
C
VCE = 10 V.
Fig.6 Transition frequency as a function of
collector current.
2004 Aug 20
5
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140S
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-06-28
04-11-16
SOT54
TO-92
SC-43A
2004 Aug 20
6
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140S
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Aug 20
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp8
Date of release: 2004 Aug 20
Document order number: 9397 750 13634
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