PBSS4140T [SEMTECH]
30 V Low VCE(sat) NPN Transistor; 30 V低VCE （ sat）的NPN晶体管
| 型号： | PBSS4140T |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | 30 V Low VCE(sat) NPN Transistor |
| 文件： | 总2页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS4140T
30 V Low VCE(sat) NPN Transistor
FEATURES
․Low collector-emitter saturation voltage
․High current capabilities
․Improved device reliability due to reduced heat generation.
APPLICATIONS
․General purpose switching and muting
․LCD backlighting
․Supply line switching circuits
․Battery driven equipment (mobile phones,
video cameras and hand-held devices).
O
Absolute Maximum Ratings (Ta = 25 C)
Symbol
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
VCBO
VCEO
VEBO
IC
40
30
V
5
V
1
A
ICM
2
1
A
IBM
A
1)
2)
O
T
amb≦25 C
200
Total Power Dissipation
Ptot
mW
O
T
amb≦25 C
450
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
-65 to +150
Thermal Resistance From Junction In free air 1)
417
Rth j-a
Tamb
K/W
In free air 2)
to Ambient
278
O
C
Operating Ambient Temperature
-65 to +150
1) Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2) Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1cm2.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
PBSS4140T
O
Characteristics at Tamb=25 C
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=5V, IC=1mA
at VCE=5V, IC=500mA
at VCE=5V, IC=1A
hFE
hFE
hFE
300
300
200
-
-
-
-
900
-
Collector-Base Cutoff Current
at VCB=40V
at VCB=40V,Tamb=150 C
ICBO
-
-
-
-
100
50
nA
µA
O
Collector-Emitter Cutoff Current
at VCE=30V
ICEO
-
-
-
-
100
100
nA
nA
Emitter-Base Cutoff Current
at VEB=5V
IEBO
Collector-Emitter Saturation Voltage
at IC=100mA, IB=1mA
at IC=500mA, IB=50mA
at IC=1A, IB=100mA
-
-
-
-
-
-
200
250
500
VCE(sat)
mV
Equivalent on-Resistance
at IC=500mA, IB=50mA;
Base-Emitter Saturation Voltage
at IC=1A, IB=100mA
RCE(sat)
VBE(sat)
VBE(on)
fT
-
260
<500
1.2
1.1
-
mΩ
V
-
-
-
-
-
Base-Emitter Turn-on Voltage
at VCE=5V, IC=1A
-
150
-
V
Transition Frequency
at VCE=10V, IC=50mA,f=100MHz
Collector Capacitance
at VCB=10V, f=1MHz
HMz
pF
CC
10
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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