NVT4555UKZ [NXP]
NVT4555 - SIM card interface level translator and supply voltage LDO;
| 型号： | NVT4555UKZ |
| 厂家： | 
NXP |
| 描述： | NVT4555 - SIM card interface level translator and supply voltage LDO 接口集成电路 |
| 文件： | 总18页 (文件大小：588K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NVT4555
SIM card interface level translator and supply voltage LDO
Rev. 2 — 24 May 2013
Product data sheet
1. General description
The NVT4555 device is built for interfacing a SIM card with a single low-voltage host side
interface. The NVT4555 contains an LDO that can deliver two different voltages, 1.8 V or
2.95 V from typical mobile phone battery voltages up to 5.25 V and three level translators
to convert the data, RSTn and CLKn signals between a SIM card and a host
microcontroller.
The NVT4555 contains one voltage select pin (CTRL) to select either 1.8 V or 2.95 V for
SIM card power supply and one active HIGH enable pin (EN) to enable normal operation.
The NVT4555 is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card
interface requirements.
2. Features and benefits
Support SIM card supply voltages 1.8 V and 2.95 V
Input voltage range to LDO: 2.5 V to 5.25 V
Host microcontroller operating voltage range: 1.1 V to 3.6 V
Automatic level translation of I/O, RSTn and CLKn between SIM card and host side
interface with capacitance isolation
Low current shutdown (EN = 0) mode < 1 A
Supports clock speed beyond 5 MHz clock
Incorporates shutdown feature for the SIM card signals according to ISO-7816-3
8 kV IEC61000-4-2 ESD protected on all SIM card contact pins
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
Available in 12-pin WLCSP package (1.19 mm 1.62 mm 0.56 mm (nominal),
0.4 mm pitch)
3. Applications
NVT4555 can be used with a range of SIM card attached devices including:
Mobile and personal phones
Wireless modems
SIM card terminals
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
4. Ordering information
Table 1.
Ordering information
Type number
Topside Package
mark
Name
Description
Version
NVT4555UK
4555
WLCSP12 wafer level chip-size package; 12 bumps;
body 1.19 1.62 0.56 mm
NVT4555UK
4.1 Ordering options
Table 2.
Ordering options
Type number
Orderable
Package
Packing method
Minimum
Temperature
part number
order quantity
NVT4555UK
NVT4555UKZ
WLCSP12 Reel 7” Q1/T1
3000
Tamb = 40 C to +85 C
*special mark chips DP
5. Functional diagram
V
VSIM
LDO
BAT
V
CC
RST_HOST
RST_SIM
CLK_SIM
CLK_HOST
IO_HOST
IO_SIM
GND
EN
CONTROL
LOGIC
CTRL
002aag074
Fig 1. Functional diagram
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
2 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
6. Pinning information
bump A1
index area
NVT4555UK
A1
B1
C1
D1
A2
B2
C2
D2
A3
B3
C3
1
2
3
A
B
C
D
IO_HOST
GND
V
CC
RST_HOST
CLK_HOST
CLK_SIM
CTRL
EN
V
BAT
VSIM
D3
RST_SIM
IO_SIM
002aag076
002aag077
Transparent top view
Transparent top view
Fig 2. Bump configuration for WLCSP12
Fig 3. Bump mapping for WLCSP12
6.1 Pin description
Table 3.
Symbol
Pin description
Pin
Type
Description
Host controller driven enable pin. This pin should be HIGH (VCC)
EN
C2
I
for normal operation, and LOW to activate a low current shutdown
mode.
CTRL
VCC
B2
A3
I
VSIM voltage select pin. A LOW level selects VSIM = 1.8 V, while
driving this pin to VCC selects VSIM = 2.95 V.
power
Supply voltage for the host controller side input/output pins
(CLK_HOST, RST_HOST, IO_HOST). When VCC is below the
UVLO threshold, the VSIM supply is disabled. This pin should be
bypassed with a 0.1 F ceramic capacitor close to the pin.
VBAT
B3
C3
power
power
Battery voltage supply for internal LDO. This input voltage ranges
from 2.5 V to 5.25 V. This pin should be bypassed with a 1.0 F
ceramic capacitor close to the pin.
VSIM
SIM card supply voltage from internal LDO. The voltage at this pin
can be selected for either 1.8 V (CTRL = 0) or 2.95 V (CTRL = 1).
This pin should be bypassed with a 4.7 F ceramic capacitor
close to the pin.
IO_SIM
D3
I/O
O
SIM card bidirectional data input/output. The SIM card output
must be on an open-drain driver.
RST_SIM
GND
D2
A2
Reset output pin for the SIM card.
ground Ground for the SIM card and host controller. Proper grounding
and bypassing are required to meet ESD specifications.
CLK_SIM
D1
O
Clock output pin for the SIM card.
Clock input from host controller.
Reset input from host controller.
CLK_HOST C1
RST_HOST B1
I
I
IO_HOST
A1
I/O
Host controller bidirectional data input/output. This output must be
on an open-drain driver.
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
3 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
7. Functional description
Refer to Figure 1 “Functional diagram”.
7.1 Function table
Table 4.
Function selection
0 = GND; 1 = VCC; X = don’t care.
CTRL input
EN input
VSIM output voltage
X
0
1
0
1
1
0 V
1.8 V
2.95 V
7.2 Shutdown sequence of NVT4555
The ISO 7816-3 specification specifies the shutdown sequence for the SIM card signals to
ensure that the card is properly disabled. Also during hot swap, the orderly shutdown of
these signals helps to avoid any improper write and corruption of data.
When the enable, EN, is asserted LOW, the shutdown sequence is initiated by powering
down the RST_SIM channel. Once the RST_SIM channel is powered down, CLK_SIM,
IO_SIM and VSIM are powered down sequentially one-by-one. An internal pull-down
resistor on the SIM pins is used to pull these channels LOW. The shutdown sequence is
completed in a few microseconds. It is important that EN is pulled LOW before VBAT and
V
CC supplies go LOW to ensure that the shutdown sequence is properly initiated.
EN
RST_SIM
CLK_SIM
IO_SIM
VSIM
ACTIVE DATA
002aag554
Fig 4. Shutdown sequence for RST_SIM, CLK_SIM, IO_SIM and VSIM of NVT4555
SIM card translator
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
4 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
[1]
VESD
electrostatic discharge voltage
SIM card side and VSIM pins;
IEC 61000-4-2
-
8
kV
[1]
[2]
[3]
all other pins; IEC 61000-4-2
all other pins; HBM
-
-
-
2
kV
kV
V
2
all other pins; CDM
500
VCC
supply voltage
GND 0.5 3.6
V
VBAT
battery supply voltage
GND 0.5 5.5
V
VI(CLK_HOST) input voltage on pin CLK_HOST input signal voltage, HOSTside
VI(RST_HOST) input voltage on pin RST_HOST input signal voltage, HOSTside
GND 0.5 VCC + 0.5
GND 0.5 VCC + 0.5
GND 0.5 VCC + 0.5
GND 0.5 VO(reg) + 0.5
GND 0.5 VO(reg) + 0.5
GND 0.5 VO(reg) + 0.5
V
V
VI(IO_HOST)
VI(CLK_SIM)
VI(RST_SIM)
VI(IO_SIM)
Tstg
input voltage on pin IO_HOST
input voltage on pin CLK_SIM
input voltage on pin RST_SIM
input voltage on pin IO_SIM
storage temperature
input signal voltage, HOSTside
input signal voltage, SIM side
input signal voltage, SIM side
input signal voltage, SIM side
V
V
V
V
55
40
+125
+85
C
C
Tamb
ambient temperature
[1] IEC 61000-4-2, level 4, contact discharge.
[2] Human Body Model (HBM) according to JESD22-A-A114.
[3] Charged-Device Model (CDM) according to JESD22-C101.
9. Characteristics
Table 6.
Supplies
2.5 V VBAT 5.5 V; 1.1 V VCC 3.6 V; Tamb = 40 C to +85 C; unless otherwise specified.
Symbol
VCC
Parameter
Conditions
Min
1.1
-
Typ[1] Max
Unit
V
supply voltage
supply current
-
3.6
10
ICC
operating mode; fclk = 1 MHz
shutdown mode; EN = GND
5
-
A
A
V
-
1
VBAT
IBAT
battery supply voltage
battery supply current
2.5
-
-
5.25
30
operating mode; IO_HOST = VCC
;
20
A
CLK_HOST = RST_HOST = GND
shutdown mode; EN = GND
-
-
-
1
1
A
Vth(UVLO)
undervoltage lockout threshold VCC rising; VBAT = 3.6 V
voltage
0.7
V
Vhys(UVLO)
undervoltage lockout
hysteresis voltage
-
100
-
mV
[1] Typical values measured at 25 C.
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
5 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
Table 7.
Static characteristics
2.5 V VBAT 5.5 V; 1.1 V VCC 3.6 V; Tamb = 40 C to +85 C; unless otherwise specified.
Symbol Parameter
VIH HIGH-level input
Conditions
Min
Typ[1]
Max
Unit
EN/CTRL pin threshold
1.8 V VCC 3.6 V
1.1 V VCC < 1.8 V
EN/CTRL pin threshold
voltage
0.7 VCC
0.85 VCC
0.15
-
-
-
VCC + 0.2
VCC + 0.2
0.15 VCC
V
V
V
VIL
LOW-level input
voltage
LDO
VO(reg)
regulator output
voltage
VSIM pin; CTRL = EN = VCC
3.1 V VBAT 5.25 V;
0 mA ISIM 50 mA
;
2.85
1.7
2.95
1.8
3.1
1.9
V
V
VSIM pin; CTRL = 0 V; EN = VCC
2.5 V VBAT 5.25 V;
;
0 mA ISIM 50 mA
Vdo
dropout voltage
IO = 50 mA; VBAT = 2.90 V
VSIM shorted to GND
-
100
135
150
170
mV
mA
IO(sc)
short-circuit output
current
90
tstartup
Tj(sd)
Tsd(hys)
Rpd
start-up time
VSIM = 1.8 V or 2.95 V;
IO = 50 mA; Co = 1 F
-
-
-
-
-
400
s
C
K
shutdown junction
temperature
160
20
100
-
-
-
hysteresis of
shutdown temperature
pull-down resistance
VSIM discharge; EN = GND;
VBAT = 3.6 V; VCC = 1.2 V
PSRR
power supply rejection
ratio
VBAT = 3.6 V; ISIM = 20 mA;
VSIM = 1.8 V or 2.95 V
f = 1 kHz
-
-
60
50
-
-
dB
dB
f = 10 kHz
Level shifter
VIH HIGH-level
IO_HOST, RST_HOST,
CLK_HOST
input voltage
[2]
[2]
[2]
[2]
1.8 V VCC < 3.6 V
1.1 V VCC < 1.8 V
IO_SIM
0.7 VCC
0.85 VCC
0.7 VO(reg)
0.15
-
-
-
-
VCC + 0.2
VCC + 0.2
VO(reg) + 0.2
0.15 VCC
V
V
V
V
VIL
LOW-level
input voltage
IO_HOST, RST_HOST,
CLK_HOST
[2]
[3]
[3]
[2]
[2]
[2]
IO_SIM
0.15
-
0.15 VO(reg)
V
RPU
pull-up resistance
IO_SIM connected to VSIM
IO_HOST connected to VCC
4
6
5
8
k
k
V
3.5
6.5
VOH
HIGH-level
output voltage
RST_SIM, CLK_SIM; IOH = 1 mA
IO_SIM; IOH = 10 A
-
-
-
0.7 VO(reg) VO(reg)
0.7 VO(reg) VO(reg)
V
IO_HOST; IOH = 10 A
0.7 VCC
VCC
V
NVT4555
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
6 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
Table 7.
Static characteristics …continued
2.5 V VBAT 5.5 V; 1.1 V VCC 3.6 V; Tamb = 40 C to +85 C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ[1]
100
Max
300
300
300
130
Unit
mV
mV
mV
k
[2]
[2]
[2]
VOL
LOW-level
RST_SIM, CLK_SIM; IOL = 1 mA
IO_SIM; IOL = 1 mA
-
output voltage
-
100
IO_HOST; IOL = 1 mA
CLK_HOST, RST_HOST; EN = 0
-
100
Rpd
pull-down resistance
series resistance
70
100
EMI filter
Rs
[2]
IO_SIM
-
-
-
-
-
-
200
200
200
45
-
-
-
-
-
-
RST_SIM
CLK_SIM
IO_SIM
[2]
[2]
Cio
input/output
capacitance
pF
pF
pF
RST_SIM
CLK_SIM
45
[2]
45
[1] Typical values measured at 25 C.
[2] VIL, VIH depend on the individual supply voltage per interface.
[3] See Figure 8 for details.
Table 8.
Dynamic characteristics
2.5 V VBAT 5.5 V; fclk = fio = 1 MHz; Tamb = 40 C to +85 C; unless otherwise specified. Refer to Figure 5.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC = 1.8 V; CTRL = VCC (VSIM = 2.95 V); SIM card CL 30 pF; host CL 10 pF
[1]
[1]
[1]
[2]
tPD
propagation delay
I/O channel; SIM card side to host side
all channels; host side to SIM card side
-
-
-
-
8
8
-
15
15
10
-
ns
ns
ns
ns
tt
transition time
tsk(o)
output skew time
between channels; IO_SIM and CLK_SIM
2
VCC = 1.2 V; CTRL = VCC (VSIM = 1.8 V); SIM card CL 30 pF; host CL 10 pF
[1]
[1]
[1]
[2]
tPD
propagation delay
I/O channel; SIM card side to host side
all channels; host side to SIM card side
-
-
-
-
-
15
15
-
25
25
10
-
ns
ns
tt
transition time
ns
tsk(o)
fclk
output skew time
clock frequency
between channels; IO_SIM and CLK_SIM
CLK_SIM
2
ns
-
5
MHz
[1] All dynamic measurements are done with a 50 pF load. Rise times are determined by internal pull-up resistors.
[2] Skew between any two outputs of the same package switching in the same direction with the same CL.
NVT4555
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
7 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
9.1 Waveforms
V
I
input
V
M
GND
t
t
PHL
PLH
V
V
OH
90 %
output
V
M
10 %
OL
t
t
TLH
THL
002aag078
Measurement points are given in Table 8.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 5. Data input to data output propagation delay times
10. Application information
The application circuit for the NVT4555, which shows the typical interface with a SIM card,
is shown in Figure 6. The Low-DropOut (LDO) regulator, internal to the NVT4555, is
designed to supply the SIM card power with a high Power Supply Rejection Ratio (PSRR)
at a very low drop-out voltage (VBAT VO(reg)). The LDO regulator provides two levels of
fixed voltage regulation at 1.8 V or 2.95 V, which are selected with the CTRL pin of the
NVT4555.
V
CC
(1.1 V to 3.6 V)
100 nF
V
(2.5 V to 5.25 V)
1 μF
BAT
(1.8 V or 2.95 V; 50 mA max.)
VSIM
LDO
REGULATOR
4.7 μF
HOST
PROCESSOR
NVT4555
SIM CARD
RST_HOST
CLK_HOST
IO_HOST
RST_SIM
CLK_SIM
IO_SIM
LEVEL
TRANSLATOR
002aag553
Fig 6. NVT4555 application circuit interfacing with typical SIM card
NVT4555
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
8 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
10.1 Input/output capacitor considerations
It is recommended that a 1 F and 100 nF capacitors having low Equivalent Series
Resistance (ESR) are used respectively at the battery (VBAT) and VCC input terminals of
the NVT4555. X5R and X7R type multi-layer ceramic capacitors (MLCC) are preferred
because they have minimal variation in value and ESR over temperature. The maximum
ESR should be < 500 m(50 m typical).
Also, a 4.7 F capacitor is recommended at the Low Dropout regulator (LDO) output
terminal to ensure stability. X5R and X7R type are recommended for their minimal
variation over temperature and low ESR over frequency which avoids stability issues at
high frequencies. The maximum ESR should be < 1.0 . Furthermore, the decrease in
capacitance with an increase in the bias voltage should be considered to optimize LDO
stability. In addition, the trade-off in LDO stability versus the value and constraint in case
size of the capacitor determined by the application must be considered. As output load
capacitance decreases, the LDO stability becomes marginal. Given that a 4.7 F ceramic
capacitor may drop by 80 % in capacitance depending on the effects of bias voltage and
temperature, it is recommended to refer to the manufacturer’s characterization of a
capacitor based on case size, bias voltage and type. Figure 7 is an example of how a
4.7 F capacitor is affected by the above parameters.
002aah650
20
∆C
/
C
(%)
1206, 6.3 V
−20
1206, 10 V
0805, 6.3 V
0603, 6.3 V
−60
0805, 10 V
0603, 10 V
0402, 6.3 V
−100
0
2
4
6
8
10
V
(V)
DC
Fig 7. Variation of capacitance for a 4.7 F capacitor versus DC voltage, value, case size and type
10.2 Layout consideration
The capacitors should be placed directly at the terminals and ground plane. Since the
internal band gap regulator is the dominant noise source in a typical application,
connections and routing of the ground is very important to improve and optimize noise
performance, PSRR and transient response. It is recommended to design the PCB so that
the VCC, VBAT and VSIM pins are bypassed with a capacitor with each ground returning to
a common node at the GND pin of the NVT4555 such that ground loops are minimized.
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
9 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
10.3 Dropout voltage
The NVT4555 uses a PMOS pass transistor to achieve a very low dropout voltage. When
VBAT VO(reg) (VSIM pin) is less than the dropout voltage, the PMOS transistor operates
in the linear region and the input-to-output resistance is RDSon of the PMOS device. The
dropout voltage, Vdo, will scale with the output current since the PMOS device behaves
like a resistor in the input-to-output path.
10.4 Level translator stage
The architecture of the NVT4555 I/O channel is shown in Figure 8. The device does not
require an extra input signal to control the direction of data flow from host to SIM or from
SIM to host. As a change of driving direction is just possible when both sides are in HIGH
state, the control logic is recognizing the first falling edge granting it control about the
other signal side. During a rising edge signal, the non-driving output is driven by a
one-shot circuit to accelerate the rising edge. In case of a communication error or some
other unforeseen incident that would drive both connected sides to be drivers at the same
time, the internal logic automatically prevents stuck-at situation, so both I/Os will return to
HIGH level once released from being driven LOW.
The channels RST and CLK just contain single direction drivers without the holding
mechanism of the I/O channel, as these are just driven from the host to the card side.
VSIM
side B supply
RISING
EDGE DETECT
ONE
SHOT
pull-up
IO_SIM
DIRECTION
CONTROL
CIRCUITRY
V
CC
side A supply
ONE
SHOT
RISING
EDGE DETECT
pull-up
IO_HOST
002aah743
Fig 8. Automatic direction control level translator for HIGH-level direction change interfaces
NVT4555
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
10 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
10.5 LDO block diagram
The LDO’s block diagram is depicted in Figure 9. It contains a pull-down mechanism to
avoid any uncontrolled voltage level at the VSIM pin in the disabled state. Furthermore,
thermal protection as well as an overcurrent protection are integrated to disable the output
in case of a permanent short that may result in excessive self-heating.
VSIM
V
BAT
R1
V
ref
EN
GENERATOR
CTRL
THERMAL
PROTECTION
R2
OVERCURRENT
PROTECTION
002aag079
GND
Fig 9. LDO block diagram
NVT4555
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
11 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
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Fig 10. Package outline NVT4555UK (WLCSP12)
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
12 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
12. Soldering of WLCSP packages
12.1 Introduction to soldering WLCSP packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering WLCSP (Wafer Level Chip-Size Packages) can be found in application note
AN10439 “Wafer Level Chip Scale Package” and in application note AN10365 “Surface
mount reflow soldering description”.
Wave soldering is not suitable for this package.
All NXP WLCSP packages are lead-free.
12.2 Board mounting
Board mounting of a WLCSP requires several steps:
1. Solder paste printing on the PCB
2. Component placement with a pick and place machine
3. The reflow soldering itself
12.3 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 11) than a PbSn process, thus
reducing the process window
• Solder paste printing issues, such as smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature), and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic) while being low enough that the packages and/or boards are not
damaged. The peak temperature of the package depends on package thickness and
volume and is classified in accordance with Table 9.
Table 9.
Lead-free process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350
260
350 to 2000
260
> 2000
260
< 1.6
1.6 to 2.5
> 2.5
260
250
245
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 11.
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
13 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 11. Temperature profiles for large and small components
For further information on temperature profiles, refer to application note AN10365
“Surface mount reflow soldering description”.
12.3.1 Stand off
The stand off between the substrate and the chip is determined by:
• The amount of printed solder on the substrate
• The size of the solder land on the substrate
• The bump height on the chip
The higher the stand off, the better the stresses are released due to TEC (Thermal
Expansion Coefficient) differences between substrate and chip.
12.3.2 Quality of solder joint
A flip-chip joint is considered to be a good joint when the entire solder land has been
wetted by the solder from the bump. The surface of the joint should be smooth and the
shape symmetrical. The soldered joints on a chip should be uniform. Voids in the bumps
after reflow can occur during the reflow process in bumps with high ratio of bump diameter
to bump height, i.e. low bumps with large diameter. No failures have been found to be
related to these voids. Solder joint inspection after reflow can be done with X-ray to
monitor defects such as bridging, open circuits and voids.
12.3.3 Rework
In general, rework is not recommended. By rework we mean the process of removing the
chip from the substrate and replacing it with a new chip. If a chip is removed from the
substrate, most solder balls of the chip will be damaged. In that case it is recommended
not to re-use the chip again.
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
14 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
Device removal can be done when the substrate is heated until it is certain that all solder
joints are molten. The chip can then be carefully removed from the substrate without
damaging the tracks and solder lands on the substrate. Removing the device must be
done using plastic tweezers, because metal tweezers can damage the silicon. The
surface of the substrate should be carefully cleaned and all solder and flux residues
and/or underfill removed. When a new chip is placed on the substrate, use the flux
process instead of solder on the solder lands. Apply flux on the bumps at the chip side as
well as on the solder pads on the substrate. Place and align the new chip while viewing
with a microscope. To reflow the solder, use the solder profile shown in application note
AN10365 “Surface mount reflow soldering description”.
12.3.4 Cleaning
Cleaning can be done after reflow soldering.
13. Abbreviations
Table 10. Abbreviations
Acronym
CDM
DP
Description
Charged-Device Model
Dry Pack
ESD
ESR
HBM
I/O
ElectroStatic Discharge
Equivalent Series Resistance
Human Body Model
Input/Output
LDO
PCB
PMOS
SIM
Low DropOut regulator
Printed-Circuit Board
Positive-channel Metal-Oxide Semiconductor
Subscriber Identification Module
14. Revision history
Table 11. Revision history
Document ID
NVT4555 v.2
Modifications:
Release date
Data sheet status
Product data sheet
Change notice
Supersedes
20130524
-
NVT4555 v.1
• Table 3 “Pin description”:
–
–
–
–
description for CTRL pin corrected from “VSIM = 3 V” to “VSIM = 2.95 V”
description for VSIM pin corrected from “3 V (CTRL = 1)” to “2.95 V (CTRL = 1)”
description for IO_HOST pin corrected from “open-drain configuration” to “open-drain driver”
deleted 4 “n.c.” rows from table (correction)
• Table 4 “Function selection”: VSIM output voltage for selection “11” corrected from “3.0 V” to “2.95 V”
• Figure 6 “NVT4555 application circuit interfacing with typical SIM card” supply voltage corrected
from “VCC (1.1 V to 3.0 V)” to “VCC (1.1 V to 3.6 V)”
• Figure 8 “Automatic direction control level translator for HIGH-level direction change interfaces”:
–
corrected connection for 2 (P-type channel) transistors
–
corrected signal name from “IO_HOST/EN” to “IO_HOST”
NVT4555 v.1
20130501
Product data sheet
-
-
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
15 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
15. Legal information
15.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
15.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
16 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NVT4555
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2013
17 of 18
NVT4555
NXP Semiconductors
SIM card interface level translator and supply voltage LDO
17. Contents
1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
2
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
4
4.1
5
6
6.1
7
7.1
7.2
Functional description . . . . . . . . . . . . . . . . . . . 4
Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Shutdown sequence of NVT4555. . . . . . . . . . . 4
8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9
9.1
10
Application information. . . . . . . . . . . . . . . . . . . 8
Input/output capacitor considerations. . . . . . . . 9
Layout consideration . . . . . . . . . . . . . . . . . . . . 9
Dropout voltage . . . . . . . . . . . . . . . . . . . . . . . 10
Level translator stage . . . . . . . . . . . . . . . . . . . 10
LDO block diagram. . . . . . . . . . . . . . . . . . . . . 11
10.1
10.2
10.3
10.4
10.5
11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
12
12.1
12.2
12.3
12.3.1
12.3.2
12.3.3
12.3.4
Soldering of WLCSP packages. . . . . . . . . . . . 13
Introduction to soldering WLCSP packages . . 13
Board mounting . . . . . . . . . . . . . . . . . . . . . . . 13
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 13
Stand off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Quality of solder joint . . . . . . . . . . . . . . . . . . . 14
Rework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Cleaning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13
14
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
15.1
15.2
15.3
15.4
16
17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 May 2013
Document identifier: NVT4555
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