NVTA7002NT1G [ONSEMI]
30 V, 154 mA, Single, NâChannel, Gate ESD Protection, SC-75;
| 型号： | NVTA7002NT1G |
| 厂家： | 
ONSEMI |
| 描述： | 30 V, 154 mA, Single, NâChannel, Gate ESD Protection, SC-75 栅 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTA7002N, NVTA7002N
Small Signal MOSFET
30 V, 154 mA, Single, N−Channel, Gate
ESD Protection, SC−75
http://onsemi.com
Features
• Low Gate Charge for Fast Switching
• Small 1.6 x 1.6 mm Footprint
• ESD Protected Gate
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
R
I MAX
D
(Note 1)
DS(on)
V
Typ @ V
(BR)DSS
GS
1.4 W @ 4.5 V
2.3 W @ 2.5 V
30 V
154 mA
3
• These Devices are Pb−Free and are RoHS Compliant
Applications
1
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc.
2
N−Channel
PIN CONNECTIONS
SC−75 (3−Leads)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
Gate
1
V
30
V
V
DSS
Gate−to−Source Voltage
V
"10
154
GS
3
Drain
Continuous Drain
Current (Note 1)
Steady State = 25°C
Steady State = 25°C
I
D
mA
Power Dissipation
(Note 1)
P
300
618
mW
D
Source
3
2
Pulsed Drain Current
t
P
v 10 ms
I
mA
DM
(Top View)
Operating Junction and Storage Temperature
T ,
STG
−55 to
150
°C
J
MARKING DIAGRAM
T
3
Continuous Source Current (Body Diode)
I
154
260
mA
SD
2
T6 MG
1
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
SC−75 / SOT−416
CASE 463
G
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
STYLE 5
T6 = Specific Device Code
M
G
= Date Code
= Pb−Free Package
THERMAL RESISTANCE RATINGS
(Note: Microdot may be in either location)
Parameter
Symbol
Max
Unit
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Junction−to−Ambient – Steady State (Note 1)
R
416
°C/W
q
JA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2012 − Rev. 5
NTA7002N/D
NTA7002N, NVTA7002N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
V
V
= 0 V, I = 100 mA
30
V
(BR)DSS
GS
D
I
I
V
= 0 V, V = 30 V
1.0
1.0
mA
mA
DSS
DSS
GS
DS
V
GS
= 0 V, V = 20 V,
DS
T = 85 °C
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
I
I
I
V
= 0 V, V
=
10 V
5 V
25
1.0
1.0
mA
mA
mA
GSS
GSS
GSS
DS
GS
V
= 0 V, V
= 0 V, V
T = 85 °C
=
DS
GS
V
=
5 V
DS
GS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
= V , I = 100 mA
0.5
1.0
1.4
2.3
80
1.5
7.0
7.5
V
GS(TH)
DS
GS
D
Drain−to−Source On Resistance
R
V
= 4.5 V, I = 154 mA
DS(on)
GS D
W
V
GS
= 2.5 V, I = 154 mA
D
Forward Transconductance
CAPACITANCES
g
FS
V
= 3 V, I = 154 mA
mS
DS
D
Input Capacitance
C
11.5
10
20
15
ISS
V
= 5.0 V, f = 1 MHz,
DS
Output Capacitance
C
OSS
C
RSS
pF
V
= 0 V
GS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
3.5
6.0
t
13
15
98
60
ns
ns
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 5.0 V,
DS
GS
I
= 75 mA, R = 10 W
D
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I = 154 mA
0.77
0.9
V
S
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTA7002N, NVTA7002N
TYPICAL PERFORMANCE CURVES
0.2
0.18
0.16
0.14
0.12
0.1
0.2
V
5 V
2.8 V
2.4 V
= 10 V
T = 25°C
V
DS
= 5 V
GS
J
0.16
0.12
0.08
2 V
0.08
0.06
0.04
T = 125°C
J
0.04
0
T = 25°C
J
1.4 V
1.2 V
0.02
0
T = −55°C
J
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
0.4
0.8
1.2
1.6
2.0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.5
2
T = 25°C
J
V
GS
= 4.5 V
T = 125°C
J
V
= 2.5 V
= 4.5 V
GS
2
1.5
1.5
T = 25°C
J
V
GS
1
1
T = −55°C
J
0.5
0.5
0
0.05
0.1
0.15
0.2
0
0.05
0.1
0.15
0.2
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
Temperature
2
1000
100
10
I
V
= 0.15 A
V
GS
= 0 V
D
1.8
1.6
1.4
1.2
= 4.5 V
GS
T = 150°C
J
1
0.8
0.6
0.4
T = 125°C
J
0.2
0
−50 −25
1
0
25
50
75
100 125
150
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTA7002N, NVTA7002N
TYPICAL PERFORMANCE CURVES
25
20
15
10
1000
C
C
T = 25°C
iss
rss
J
V
= 5.0 V
= 75 mA
= 4.5 V
DD
I
D
V
GS
t
d(off)
100
10
1
t
f
t
r
C
t
iss
d(on)
C
oss
5
0
V
= 0 V
V
GS
= 0 V
5
C
DS
rss
10
5
0
10
15
20
1
10
R , GATE RESISTANCE (OHMS)
100
V
GS
V
DS
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
0.16
V
GS
= 0 V
0.14
0.12
0.1
T = 25°C
J
0.08
0.06
0.04
0.02
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
†
Package
Shipping
NTA7002NT1G
SC−75
(Pb−Free)
3000 / Tape & Reel
NVTA7002NT1G
SC−75
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTA7002N, NVTA7002N
PACKAGE DIMENSIONS
SC−75 / SOT−416
CASE 463
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX
0.70
A1 0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
M
D
0.20 (0.008) E
H
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
1.60
E
C
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTA7002N/D
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