NVTFS012P03P8ZTAG [ONSEMI]
Power MOSFET, Single, P-Channel, WDFN6, -30 V, 11.3 mΩ @ -10V, -11.7 A;
| 型号： | NVTFS012P03P8ZTAG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single, P-Channel, WDFN6, -30 V, 11.3 mΩ @ -10V, -11.7 A |
| 文件： | 总7页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
P-Channel, WDFN6
-30 V
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
11.3 mW @ −10 V
20 mW @ −4.5 V
−30 V
−11.7 A
NVTFS012P03P8Z,
NVTFWS012P03P8Z
ELECTRICAL CONNECTION
S
Features
G
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
D
Compliant
P−CHANNEL MOSFET
Applications
MARKING
DIAGRAMS
• Battery Management
• Protection
1
1
• Power Load Switch
XXXXX
WDFN8
(m8FL)
CASE 511AB
AYWWG
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G
Parameter
Drain−to−Source Voltage
Symbol
Value
−30
Unit
V
V
DSS
XXXX
AYWWG
G
Gate−to−Source Voltage
V
25
V
GS
Continuous Drain
Current R
Steady
State
T = 25°C
I
−11.7
−8.4
2.40
A
A
D
WDFNW8
(m8FL WF)
CASE 515AN
q
JA
T = 85°C
A
(Notes 1, 3)
Power Dissipation
T = 25°C
A
P
W
A
D
R
(Notes 1, 3)
q
JA
XXXX = Specific Device Code
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
−7.0
−5.1
0.86
D
A
Y
= Assembly Location
= Year
q
JA
T = 85°C
A
(Notes 2, 3)
WW
G
= Work Week
Power Dissipation
T = 25°C
A
P
W
= Pb−Free Package
D
R
(Notes 2, 3)
q
JA
(Note: Microdot may be in either location)
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
47
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
52
Unit
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JA
Junction−to−Ambient − Steady State (Note 2)
R
145
q
JA
2
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted. Actual
continuous current will be limited by thermal & electro−mechanical application
board design. R
is determined by the user’s board design.
q
CA
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
October, 2021 − Rev. 0
NVTFS012P03P8Z/D
NVTFS012P03P8Z, NVTFWS012P03P8Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−30
V
(BR)DSS
D
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V
/
−9.9
mV/°C
(BR)DSS
I
D
= −250 mA, ref to 25°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
−10
mA
mA
DSS
GS
T = 25°C
J
V
= −30 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
=
25 V
10
GSS
DS
GS
V
V
= V , I = −250 mA
−1.0
−3.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
R
/T
I = −250 mA, ref to 25°C
D
−4.7
8.3
mV/°C
mW
GS
J
V
= −10 V, I = −10 A
11.3
20
DS(on)
GS
GS
D
V
= −4.5 V, I = −10 A
13.3
41
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
DS
= −5 V, I = −10 A
S
FS
D
C
1535
526
506
21
pF
iss
V
GS
= 0 V, V = −15 V,
DS
Output Capacitance
C
oss
f = 1.0 MHz
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
nC
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
1.4
G(TH)
V
GS
= −4.5 V, V = −15 V,
DS
I
= −10 A
D
Q
2.8
GS
Q
14.8
36
GD
V
GS
= −10 V, V = −15 V,
nC
ns
G(TOT)
DS
I
= −10 A
D
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
15
66
48
77
d(on)
t
r
V
GS
I
= −4.5 V, V = −15 V,
DD
= −10 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
SWITCHING CHARACTERISTICS, V = 10 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
7
ns
d(on)
t
r
17
89
75
V
V
= −10 V, V = −15 V,
DD
GS
I
= −10 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.82
0.7
19
1.3
V
SD
J
= 0 V,
= −10 A
GS
I
S
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
GS
= 0 V, dl /dt = −100 A/ms,
S
I
S
= −10 A
Reverse Recovery Charge
Q
10
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS012P03P8Z, NVTFWS012P03P8Z
TYPICAL CHARACTERISTICS
16
14
12
10
8
60
V
GS
= −10 V to −4.5 V
−3.0 V
−2.8 V
50
40
30
20
−3.5 V
6
T = 25°C
J
4
−2.6 V
−2.4 V
10
0
.
2
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
35
18
16
14
12
10
8
T = 25°C
J
T = 25°C
D
J
30
25
20
15
10
5
I
= −10 A
V
= −4.5 V
= −10 V
GS
V
GS
6
3
4
5
6
7
8
9
10
2
4
6
8
10
12
14
16
18 20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage (V)
Gate Voltage
100K
10K
1K
V
= −10 V
= −10 A
1.5
1.3
1.1
0.9
GS
T = 150°C
J
I
D
T = 125°C
J
100
10
T = 85°C
J
T = 25°C
J
1
0.1
0.7
0.5
0.01
0.001
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTFS012P03P8Z, NVTFWS012P03P8Z
TYPICAL CHARACTERISTICS
10K
1K
10
V
= −15 V
= −10 A
DS
9
8
7
6
5
4
3
2
I
D
T = 25°C
J
C
ISS
C
C
OSS
RSS
Q
GS
Q
GD
100
10
f = 1 MHz
= 0 V
T = 25°C
J
V
GS
1
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1K
V
V
= −10 V
= −15 V
V
GS
= 0 V
GS
DS
t
f
I
D
= −10 A
t
10
d(off)
t
r
100
t
d(on)
10
1
T = 125°C T = 25°C
T = −55°C
J
J
J
1
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
1
10
R , GATE RESISTANCE (W)
100
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
J(initial)
10 ms
T
= 100°C
J(initial)
V
≤ 10 V
GS
10 ms
Limit
Single Pulse
= 25°C
1
0.5 ms
1 ms
T
C
1
R
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.0001
0.1
1
10
100
1000
0.001
TIME IN AVALANCHE (s)
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVTFS012P03P8Z, NVTFWS012P03P8Z
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Device Marking
Package
Shipping
NVTFS012P03P8ZTAG
12P3
WDFN8
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVTFWS012P03P8ZTAG
12PW
WDFN8
(Pb−Free, Wettable Flank)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTFS012P03P8Z, NVTFWS012P03P8Z
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
CASE 515AN
ISSUE O
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6
NVTFS012P03P8Z, NVTFWS012P03P8Z
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
BOTTOM VIEW
G
2.30
0.57
0.47
0.75
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy
and soldering details, please download the
onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
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