MRF6VP121KHSR5 [NXP]
RF POWER, FET;
NXP 
Document Number: MRF6VP121KH
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6VP121KHR6
MRF6VP121KHSR6
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
•
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout =
1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
965--1215 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
Duty Cycle = 10%
Power Gain — 20 dB
Drain Efficiency — 56%
RF POWER MOSFETs
•
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak
Power
Features
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 375D--05, STYLE 1
NI--1230
MRF6VP121KHR6
•
•
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP121KHSR6
PARTS ARE PUSH--PULL
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Z
θ
°C/W
JC
Case Temperature 67°C, 1000 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle,
0.02
50 Vdc, I = 150 mA
DQ
Case Temperature 62°C, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec
0.07
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, I = 150 mA
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
1B (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(3)
Off Characteristics
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 165 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
10
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
100
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(3)
Gate Threshold Voltage
(V = 10 Vdc, I = 1000 μAdc)
V
0.9
1.5
—
1.6
2.2
2.4
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(4)
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
V
DD
D
(3)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.7 Adc)
V
0.15
—
GS
D
(3)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
1.27
86.7
539
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(4)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak (100 W Avg.),
DD DQ out
f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
19
20
56
22
—
-- 9
dB
%
ps
D
Drain Efficiency
η
54
Input Return Loss
IRL
—
-- 2 3
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
(continued)
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Pulsed RF Performance — 785 MHz (In Freescale 785 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W
DD
DQ
out
Peak (100 W Avg.), f = 785 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
—
18.9
57.8
—
—
—
dB
%
ps
D
Drain Efficiency
η
—
—
Input Return Loss
IRL
--16.6
dB
Pulsed RF Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W
DD
DQ
out
Peak (100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty
Cycle
Power Gain
G
—
—
—
19.8
59.0
0.21
—
—
—
dB
%
ps
D
Drain Efficiency
Burst Droop
η
BD
dB
rp
Pulsed RF Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W
DD
DQ
out
Peak (100 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
—
21.4
—
—
—
dB
%
ps
D
Drain Efficiency
η
—
—
56.3
Input Return Loss
IRL
--25.3
dB
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
3
V
BIAS
V
+
SUPPLY
+
+
C1
C2
C3
C4
C21 C22
C23 C24
L1
BALUN 1
C13
Z13
R1
C17
C18
Z11
Z15 Z17 Z19 Z21
Z3 Z5
Z4 Z6
Z7
Z9
RF
RF
OUTPUT
INPUT
C10
Z1
Z2
Z23
DUT
C15
C12
Z10
C16
Z8
C9
C11
Z12
Z14
C14
Z16 Z18 Z20 Z22
R2
C19
C20
BALUN 2
L2
V
BIAS
+
C5
C6
C7
C8
V
SUPPLY
+
+
C25 C26 C27 C28
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
0.140″ x 0.083″
0.300″ x 0.083″
0.746″ x 0.220″
0.075″ x 0.631″
0.329″ x 0.631″
0.326″ x 0.631″
0.240″ x 0.631″
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z23
0.143″ x 0.631″
0.135″ x 0.631″
0.102″ x 0.632″
0.130″ x 0.631″
0.736″ x 0.215″
0.410″ x 0.083″
Z11, Z12
PCB
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
Figure 2. MRF6VP121KHR6(HSR6) Test Circuit Schematic
Table 5. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Manufacturer
Part Number
Anaren
Balun 1, 2
C1, C5
Balun Anaren
3A412
22 μF, 25 V Tantalum Capacitors
2.2 μF, 50 V Chip Capacitors
0.22 μF, 100 V Chip Capacitors
36 pF Chip Capacitors
TPSD226M025R
AVX
C2, C6
C1825C225J5RAC
C1210C224K1RAC
ATC100B360JT500XT
Kemet
Kemet
ATC
C3, C7
C4, C8, C10, C11, C17,
C18, C19, C20, C21, C25
C9
1.0 pF Chip Capacitor
ATC100B1R0CT500XT
27291SL
ATC
C12, C16
C13, C14, C15
C22, C26
C23, C24, C27, C28
L1, L2
0.8--8.0 pF Variable Capacitors
5.1 pF Chip Capacitors
Johanson
ATC
ATC100B5R1CT500XT
C1825C223K1GAC
MCGPR63V477M13X26--RH
GA3094--AL
0.022 μF, 100 V Chip Capacitors
470 μF, 63 V Electrolytic Capacitors
Inductors 3 Turn
Kemet
Multicomp
Coilcraft
Vishay
R1, R2
1000 Ω, 1/4 W Chip Resistors
CRCW12061001FKEA
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
4
C24
C23
MRF6VP121KH
Rev. 2
C1
C3
C4
--
C22
C2
C21
L1
BALUN 1
BALUN 2
C13
R1
R2
C12
C17
C18
C10
C11
C16
C15
C19
C20
C9
L2
C14
C8
C7
C26
C6
C25
C5
C27
C28
--
Figure 3. MRF6VP121KHR6(HSR6) Test Circuit Component Layout
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
1000
100
10
22
60
50
40
30
20
10
0
V
= 50 Vdc
= 150 mA
DD
C
iss
I
DQ
21
20
19
18
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
G
ps
C
oss
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
C
rss
V
GS
η
D
17
16
1
0
10
20
30
40
50
1
10
100
1000
10000
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
P , OUTPUT POWER (WATTS) PULSED
out
DS
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
25
24
22
Ideal
21.5
21
I
= 6000 mA
DQ
23
22
21
20
19
18
17
16
P1dB = 1065 W (60.3 dBm)
20.5
20
3000 mA
1500 mA
P3dB = 1182 W (60.7 dBm)
19.5
19
V
I
= 50 Vdc
= 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
750 mA
375 mA
DD
V
= 50 Vdc
DD
DQ
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
18.5
18
Actual
150 mA
500
600
700
800
900
1000 1100 1200 1300
1
10
100
1000
10000
P
, OUTPUT POWER (WATTS) PULSED
P
, OUTPUT POWER (WATTS) PULSED
out
out
Figure 7. Pulsed Power Gain versus
Output Power
Figure 6. Pulsed Power Gain versus
Output Power
23
22
21
20
19
65
I
= 150 mA, f = 1030 MHz
DQ
Pulse Width = 128 μsec
Duty Cycle = 10%
60
55
50
45
40
T
= --30_C
C
25_C
V
= 50 Vdc
DD
18
17
16
I
= 150 mA
DQ
45 V
1000
V
= 30 V
400
40 V
800
50 V
1200
35 V
600
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
DD
85_C
0
200
1400
20
25
30
35
40
45
P , INPUT POWER (dBm) PULSED
in
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Output Power versus
Input Power
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
23
22
21
20
19
18
17
16
70
60
50
40
30
V
I
= 50 Vdc
= 150 mA
DD
DQ
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
G
ps
T
= --30_C
C
20
10
0
25_C
85_C
η
D
1
10
100
1000
10000
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
9
8
7
9
10
10
10
10
8
10
7
10
6
6
10
10
10
5
5
10
4
4
10
10
90
110
130
150
170
190
210
230
250
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1000 W Peak, Pulse Width = 128 μsec,
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1000 W Peak, Mode--S Pulse Train,
DD
out
DD
out
Duty Cycle = 10%, and η = 56%.
Pulse Width = 32 μsec, Duty Cycle = 6.4%, and η = 59%.
D
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature --
Figure 12. MTTF versus Junction Temperature --
Mode--S
128 μsec, 10% Duty Cycle
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
7
Z = 5 Ω
o
f = 1030 MHz
Z
load
f = 1030 MHz
Z
source
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1030
3.93 + j0.09
1.54 + j1.42
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
8
C26
C25
MRF6VP121KH
Rev. 2
C1
C3
C4
C24
L1
C2
C23
BALUN 1
BALUN 2
R1
C9
C13
C17 C18
C19
C20
C10
C11
C14
C12
C21
C22
C15
C16
L2
R2
C8
C7
C28
C6
C27
- -
C29
C30
C5
Figure 14. MRF6VP121KHR6(HSR6) Test Circuit Component Layout — 785 MHz
Table 6. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values — 785 MHz
Part
Description
Manufacturer
Part Number
Balun 1, 2
C1, C5
Balun Anaren
3A412
Anaren
22 μF, 25 V Tantalum Capacitors
2.2 μF, 50 V Chip Capacitors
0.22 μF, 100 V Chip Capacitors
36 pF Chip Capacitors
TPSD226M025R0200
C1825C225J5RAC--TU
C1210C224K1RAC--TU
ATC100B360JT500XT
AVX
C2, C6
Kemet
Kemet
ATC
C3, C7
C4, C8, C10, C11, C19,
C20, C21, C22, C23, C27
C9
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
27271SL
ATC
C12
0.6--4.5 pF Variable Capacitor
3.6 pF Chip Capacitor
Johanson
ATC
C13
ATC100B3R6CT500XT
ATC100B100JT500XT
ATC100B5R1CT500XT
C1825C223K1GAC
MCGPR63V477M13X26--RH
GA3094--ALC
C14
10 pF Chip Capacitor
ATC
C15, C16, C17, C18
C24, C28
C25, C26, C29, C30
L1, L2
5.1 pF Chip Capacitors
ATC
0.022 μF, 100 V Chip Capacitors
470 μF, 63 V Electrolytic Capacitors
Inductors 3 Turn
Kemet
Multicomp
Coilcraft
Vishay
Arlon
R1, R2
1000 Ω, 1/4 W Chip Resistors
CRCW12061K00FKEA
250GX--0300--55--22
PCB
CuClad, 0.030″, ε = 2.55
r
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
9
TYPICAL CHARACTERISTICS — 785 MHZ
20.5
60
V
= 50 Vdc
= 150 mA
DD
20
19.5
19
55
50
45
40
35
30
25
I
DQ
f = 785 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
18.5
G
ps
18
17.5
17
η
D
20
15
10
16.5
16
15.5
10
100
1000
3000
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 15. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6VP121KHR6 MRF6VP121KHSR6
10
RF Device Data
Freescale Semiconductor
Z = 5 Ω
o
Z
f = 785 MHz
load
f = 785 MHz
Z
source
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
785
1.54 -- j0.46
2.79 + j1.10
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance — 785 MHz
MRF6VP121KHR6 MRF6VP121KHSR6
11
RF Device Data
Freescale Semiconductor
- -
C24
MRF6VP121KH
Rev. 2
C23
C1
C3
C4
C22
C2
C21
BALUN 1
BALUN 2
C13
C15
R1
L1
C16
C12
C17
C10
C11
C29
C18
C19
C20
C9
L2
R2
C14
C8
C7
C26
C6
C25
- -
C5
C27
C28
Figure 17. MRF6VP121KHR6(HSR6) Test Circuit Component Layout — 1090 MHz
Table 7. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values — 1090 MHz
Part
Description
Manufacturer
Part Number
Balun 1, 2
C1, C5
Balun Anaren
3A412
Anaren
22 μF, 25 V Tantalum Capacitors
2.2 μF, 50 V 1825 Chip Capacitors
0.22 μF, 100 V Chip Capacitors
36 pF Chip Capacitors
TPSD226M025R0200
C1825C225J5RAC--TU
C1210C224K1RAC--TU
ATC100B360JT500XT
AVX
C2, C6
Kemet
Kemet
ATC
C3, C7
C4, C8, C17, C18, C19,
C20, C21, C25
C9
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
27291SL
ATC
C12, C16
0.8--8.0 pF Variable Capacitors
5.1 pF Chip Capacitors
Johanson
ATC
C10, C11, C13, C14, C15,
C29
ATC100B5R1CT500XT
C22, C26
C23, C24, C27, C28
L1, L2
0.022 μF, 100 V Chip Capacitors
470 μF, 63 V Electrolytic Capacitors
Inductors 3 Turn
C1825C223K1GAC
MCGPR63V477M13X26--RH
GA3094--ALC
Kemet
Multicomp
Coilcraft
Vishay
Arlon
R1, R2
1000 Ω, 1/4 W Chip Resistors
CRCW12061K00FKEA
250GX--0300--55--22
PCB
CuClad, 0.030″, ε = 2.55
r
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
12
TYPICAL CHARACTERISTICS — 1090 MHZ
22
21
20
19
18
17
16
60
50
V
= 50 Vdc
= 150 mA
DD
I
DQ
f = 1090 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
40
30
20
10
0
G
ps
η
D
10
100
1000
3000
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 18. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6VP121KHR6 MRF6VP121KHSR6
13
RF Device Data
Freescale Semiconductor
Z = 5 Ω
o
f = 1090 MHz
f = 1090 MHz
Z
source
Z
load
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1090
2.98 + j3.68
1.51 + j2.02
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 19. Series Equivalent Source and Load Impedance — 1090 MHz
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
June 2009
June 2009
•
Initial Release of Data Sheet
•
•
Added Pulsed RF Performance tables for 785 MHz and 1090 MHz applications, p. 3
Added Figs. 13 and 16, Test Circuit Component Layout -- 785 MHz and 1090 MHz, and Tables 6 and 7, Test
Circuit Component Designations and Values -- 785 MHz and 1090 MHz, p. 9, 12
•
Added Figs. 14 and 17, Pulsed Power Gain and Drain Efficiency versus Output Power -- 785 MHz and
1090 MHz, p. 10, 13
•
•
Added Figs. 15 and 18, Series Equivalent Source and Load Impedance -- 785 MHz and 1090 MHz, p. 11, 14
2
3
Dec. 2009
Apr. 2010
Added thermal data for 1030 MHz Mode--S application to Table 2, Thermal Characteristics, reporting of
pulsed thermal data now shown using the Z
symbol, p. 2
θ
JC
•
•
Added Typical Performances table for 1030 MHz Mode--S application, p. 3
Added Fig. 12, MTTF versus Junction Temperature -- 1030 MHz Mode--S, p. 7
•
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
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Document Number: MRF6VP121KH
Rev. 3, 4/2010
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