MRF6VP21KHR6_10 [FREESCALE]
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET; 射频功率场效应晶体管N - 沟道增强 - 模式横向MOSFET
| 型号： | MRF6VP21KHR6_10 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| 文件： | 总11页 (文件大小：703K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6VP21KH
Rev. 4, 4/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
235 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
MRF6VP21KHR6
•
Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA,
P
out = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
10--235 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
Duty Cycle = 20%
Power Gain — 24 dB
Drain Efficiency — 67.5%
RF POWER MOSFET
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak
Power
Features
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 375D--05, STYLE 1
NI--1230
•
•
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
PART IS PUSH--PULL
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
-- 6 , + 1 0
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Z
θ
0.03
°C/W
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Off Characteristics
Gate--Source Leakage Current
I
—
110
—
—
—
—
—
20
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(I = 300 mA, V = 0 Vdc)
V
(BR)DSS
D
GS
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
100
5
μAdc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(1)
Gate Threshold Voltage
(V = 10 Vdc, I = 1600 μAdc)
V
1
1.68
2.2
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(2)
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
V
1.5
—
3.5
—
DD
D
(1)
Drain--Source On--Voltage
(V = 10 Vdc, I = 4 Adc)
V
0.28
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
3.3
147
506
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 225 MHz,
DD DQ out
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G
22
65
—
24
26
—
-- 9
dB
%
ps
Drain Efficiency
η
67.5
-- 1 5
D
Input Return Loss
IRL
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
2
R2
L4
V
V
SUPPLY
B1
L1
BIAS
R1
+
+
+
+
+
+
C1 C2 C3
C4 C5 C6
C7
C8 C9 C10
C11
C13 C14
C15 C16 C17 C18 C19 C20
C21
Z14
Z10 Z12
Z16
Z4
Z5
Z6
Z7
Z8
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
J1
Z18 Z19
L3
Z9
DUT
C23
Z15
C24
Z17
J2
L2
C25
C12
Z11 Z13
T1
T2
C22
Z1
Z2*
Z3*
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
0.100″ x 0.082″ Microstrip
1.557″ x 0.082″ Microstrip
0.055″ x 0.082″ Microstrip
0.133″ x 0.193″ Microstrip
0.143″ x 0.518″ Microstrip
0.357″ x 0.518″ Microstrip
0.200″ x 0.518″ Microstrip
Z12, Z13
Z14, Z15
Z16*, Z17*
Z18
Z19
PCB
0.599″ x 0.253″ Microstrip
0.110″ x 0.253″ Microstrip
0.055″ x 0.253″ Microstrip
0.069″ x 0.082″ Microstrip
1.050″ x 0.082″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
*Line length includes microstrip bends.
Figure 2. MRF6VP21KHR6 Test Circuit Schematic
Table 5. MRF6VP21KHR6 Test Circuit Component Designations and Values
Part
Description
95 Ω, 100 MHz Long Ferrite Bead
47 μF, 50 V Electrolytic Capacitor
22 μF, 35 V Tantalum Capacitor
10 μF, 35 V Tantalum Capacitor
10K pF Chip Capacitors
20K pF Chip Capacitors
0.1 μF, 50 V Chip Capacitors
2.2 μF, 50 V Chip Capacitor
0.22 μF, 100 V Chip Capacitor
1000 pF Chip Capacitors
27 pF Chip Capacitors
Part Number
Manufacturer
Fair--Rite
B1
C1
C2
C3
2743021447
476KXM050M
Illinois Cap
Kemet
Kemet
ATC
T491X226K035AT
T491D106K035AT
ATC200B103KT50XT
ATC200B203KT50XT
CDR33BX104AKYS
C1825C225J5RAC
C1825C223K1GAC
ATC100B102JT50XT
ATC100B270JT500XT
EKME630ELL471MK25S
ATC100B680JT500XT
ATC100B4R7JT500XT
Copper Foil
C4, C9, C17
C5, C16
ATC
C6, C15
Kemet
Kemet
Kemet
ATC
C7
C8
C10, C11, C13, C14
C12, C21, C22
ATC
C18, C19, C20
470 μF, 63 V Electrolytic Capacitors
68 pF Chip Capacitors
Multicomp
ATC
C23, C24
C25
4.7 pF Chip Capacitor
ATC
J1, J2
Jumpers from PCB to T1 and T2
82 nH Inductor
L1
1812SMS--82NJC
A03TKLC
CoilCraft
CoilCraft
CoilCraft
L2
8 nH Inductor
L3
1 Turn Inductor, Red Coil
10 Turn, #18 AWG Inductor, Hand Wound
1 KΩ, 1/4 W Axial Leaded Resistor
20 Ω, 3 W Chip Resistor
Balun
GA3092--AL
L4*
Copper Wire
R1
CMF601000R0FKEK
CPF320R000FKE14
TUI--9
Vishay
R2
Vishay
T1
Comm Concepts
Comm Concepts
T2
Balun
TUO--4
*L4 is wrapped around R2.
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
3
C1
C19
C4
C5
C6
C17
C16
C15
C18
B1
L1
C20
C2 C3
C7
C14
C13
L4, R2*
R1
C8
C9
C21
C22
C10
T2
C11
T1
C23
J2
J1
C24
L3
L2
C12
C25
MRF6VP21KH
Rev. 1
* L4 is wrapped around R2.
Figure 3. MRF6VP21KHR6 Test Circuit Component Layout
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
1000
100
10
100
C
iss
C
oss
T = 200°C
J
T = 175°C
J
T = 150°C
J
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
10
V
GS
C
rss
T
= 25°C
C
1
1
0
10
20
30
40
50
1
10
V , DRAIN--SOURCE VOLTAGE (VOLTS)
DS
100
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
26
80
70
60
50
40
65
Ideal
V
= 50 Vdc, I = 150 mA, f = 225 MHz
DQ
DD
P3dB = 61.33 dBm (1358.31 W)
64
63
62
61
60
59
58
57
56
55
Pulse Width = 100 μsec, Duty Cycle = 20%
25
24
23
22
21
20
19
P1dB = 60.37 dBm (1088.93 W)
G
ps
Actual
30
20
10
η
D
V
= 50 Vdc, I = 150 mA, f = 225 MHz
DQ
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
10
100
, OUTPUT POWER (WATTS) PULSED
1000 2000
30
31
32
33
34
35
36
37
38
39
40
P
P , INPUT POWER (dBm) PULSED
out
in
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed Output Power versus
Input Power
28
26
24
22
20
18
28
24
20
16
I
= 6000 mA
DQ
3600 mA
1500 mA
750 mA
50 V
45 V
375 mA
40 V
V
= 30 V
DD
35 V
150 mA
I
= 150 mA, f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
V
= 50 Vdc, f = 225 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
12
10
100
1000
2000
0
200
400
600
800
1000 1200 1400 1600
P
, OUTPUT POWER (WATTS) PULSED
P
, OUTPUT POWER (WATTS) PULSED
out
out
Figure 9. Pulsed Power Gain versus
Output Power
Figure 8. Pulsed Power Gain versus
Output Power
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
65
60
55
50
45
40
26
90
80
70
V
= 50 Vdc
= 150 mA
DD
T
= --30_C
T
= --30_C
C
C
25
24
23
22
21
20
19
18
I
DQ
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
85_C
85_C
25_C
60
50
40
25_C
V
I
= 50 Vdc
DD
= 150 mA
DQ
η
D
G
ps
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
30
20
10
20
25
30
35
40
45
10
100
, OUTPUT POWER (WATTS) PULSED
out
1000 2000
P , INPUT POWER (dBm) PULSED
P
in
Figure 10. Pulsed Output Power versus
Input Power
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
9
0.2
0.18
0.16
10
D = 0.7
D = 0.5
0.14
0.12
8
7
6
10
10
10
0.1
P
0.08
D
t
1
t
0.06
0.04
2
D = Duty Factor = t /t
1
2
t = Pulse Width
1
D = 0.1
t = Pulse Period
2
0.02
0
T = P * Z + T
J
D
JC
C
0.00001 0.0001
0.001
0.01
0.1
1
10
90
110
130
150
170
190
210
230
250
RECTANGULAR PULSE WIDTH (S)
T , JUNCTION TEMPERATURE (°C)
J
Figure 12. Maximum Transient Thermal Impedance
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1000 W Peak, Pulse Width = 100 μsec,
DD
out
Duty Cycle = 20%, and η = 67.5%.
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
6
f = 225 MHz
Z
source
Z = 5 Ω
o
f = 225 MHz
Z
load
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
225
1.16 + j4.06
2.86 + j1.10
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 14. Series Equivalent Source and Load Impedance
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
8
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Jan. 2008
Apr. 2008
•
•
Initial Release of Data Sheet
Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
compliant part number in Table 5, Test Circuit Component Designations and Values, and updated the
footnote to read “L4” versus “L3”, p. 3.
•
•
Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
Sept. 2008
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
•
•
Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
MTTF factor accordingly, p. 6
3
4
Dec. 2008
Apr. 2010
•
Fig. 14, Series Equivalent Source and Load Impedance, corrected Z
impedance as measured from gate to gate, balanced configuration” and Z
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to
show push--pull test conditions, p. 7
copy to read “Test circuit
source
copy to read “Test circuit
load
•
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
•
•
Reporting of pulsed thermal data now shown using the Z
symbol, p. 1
JC
θ
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 10
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
10
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
Semiconductor was negligent regarding the design or manufacture of the part.
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ Freescale Semiconductor, Inc. 2008, 2010. All rights reserved.
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF6VP21KH
Rev.4, 4/2010
相关型号：
MRF6VP2600HR6_10
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
FREESCALE
MRF6VP3091NR5
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
NXP
MRF6VP3450HR5
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF6VP3450HR6
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF6VP3450HSR5
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF6VP3450HSR6
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
©2020 ICPDF网 联系我们和版权申明