MRF6VP2600HR6_10 [FREESCALE]
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET; 射频功率场效应晶体管N - 沟道增强 - 模式横向MOSFET
| 型号： | MRF6VP2600HR6_10 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| 文件： | 总19页 (文件大小：1439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6VP2600H
Rev. 5.1, 7/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz.
Device is unmatched and is suitable for use in broadcast applications.
MRF6VP2600HR6
•
Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA,
Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,
Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
Power Gain — 25 dB
2--500 MHz, 600 W, 50 V
LATERAL N--CHANNEL
BROADBAND
Drain Efficiency — 28.5%
RF POWER MOSFET
ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth
•
•
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA,
Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty
Cycle = 20%
Power Gain — 25.3 dB
Drain Efficiency — 59%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak
Power, Pulse Width = 100 μsec, Duty Cycle = 20%
Features
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
CASE 375D--05, STYLE 1
NI--1230
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
PART IS PUSH--PULL
•
•
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, I = 2600 mA
0.20
0.14
0.16
DQ
Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, I
= 150 mA
DQ
Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, I
= 150 mA
DQ
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Off Characteristics
Gate--Source Leakage Current
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(I = 150 mA, V = 0 Vdc)
V
(BR)DSS
D
GS
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
50
2.5
μAdc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(1)
Gate Threshold Voltage
(V = 10 Vdc, I = 800 μAdc)
V
1
1.65
2.7
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(2)
Gate Quiescent Voltage
(V = 50 Vdc, I = 2600 mAdc, Measured in Functional Test)
V
1.5
—
3.5
—
DD
D
(1)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.25
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
1.7
101
287
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 2600 mA, P = 125 W Avg., f = 225 MHz, DVB--T
DD DQ out
OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset.
Power Gain
G
24
27
—
—
25
27
—
dB
%
ps
D
Drain Efficiency
η
28.5
-- 6 1
-- 1 8
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-- 5 9
-- 9
dBc
dB
Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 600 W CW
DD
DQ
out
Power Gain
G
—
22
—
—
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
η
—
—
68
IRL
-- 1 5
dB
Typical Performance — 88--108 MHz (In Freescale 88--108 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 600 W
DD
DQ
out
CW
Power Gain
G
—
—
—
24.5
74
—
—
—
dB
%
ps
D
Drain Efficiency
η
Input Return Loss
IRL
-- 5
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
2
R1
L4
V
V
SUPPLY
BIAS
B1
L3
L2
+
+
+
+
+
+
C16 C15 C14
C13 C12 C11
C9 C8 C7 C10
C6
C19 C17 C18
C20 C21 C22 C23 C24 C25
Z9 Z11 Z13
Z15
Z17
Z5 Z7
RF
RF
INPUT
OUTPUT
Z1
Z2
Z3
Z4
Z19 Z20
L1
DUT
C3
Z16
C4
Z18
J2
J1
Z6 Z8
C5
C1
C2
Z10 Z12 Z14
T1
T2
Z1
1.049″ x 0.080″ Microstrip
0.143″ x 0.080″ Microstrip
0.188″ x 0.080″ Microstrip
0.192″ x 0.133″ Microstrip
0.418″ x 0.193″ Microstrip
0.217″ x 0.518″ Microstrip
0.200″ x 0.518″ Microstrip
0.375″ x 0.214″ Microstrip
Z13, Z14
Z15*, Z16*
Z17, Z18
Z19
Z20
PCB
0.224″ x 0.253″ Microstrip
0.095″ x 0.253″ Microstrip
0.052″ x 0.253″ Microstrip
0.053″ x 0.080″ Microstrip
1.062″ x 0.080″ Microstrip
Z2*
Z3*
Z4
Z5, Z6
Z7, Z8
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
Z9, Z10
Z11, Z12
* Line length includes microstrip bends
Figure 2. MRF6VP2600HR6 Test Circuit Schematic
Table 5. MRF6VP2600HR6 Test Circuit Component Designations and Values
Part
Description
95 Ω, 100 MHz Long Ferrite Bead
47 pF Chip Capacitor
Part Number
Manufacturer
Fair--Rite
B1
2743021447
C1
ATC100B470JT500XT
ATC100B430JT500XT
ATC100B101JT500XT
ATC100B7R5CT500XT
C1825C225J5RAC
ATC200B103KT50XT
C1812C224J5RAC
ATC100B102JT50XT
CDR33BX104AKYS
ATC200B203KT50XT
T491D106K035AT
T491X226K035AT
476KXM050M
ATC
C2, C4
C3
43 pF Chip Capacitors
ATC
100 pF Chip Capacitor
ATC
C5
10 pF Chip Capacitor
ATC
C6, C9
2.2 μF, 50 V Chip Capacitors
10K pF Chip Capacitors
Kemet
ATC
C7, C13, C20
C8
220 nF, 50 V Chip Capacitor
1000 pF Chip Capacitors
0.1 μF, 50 V Chip Capacitors
20K pF Chip Capacitors
Kemet
ATC
C10, C17, C18
C11, C22
Kemet
ATC
C12, C21
C14
10 μF, 35 V Tantalum Capacitor
22 μF, 35 V Tantalum Capacitor
47 μF, 50 V Electrolytic Capacitor
2.2 μF, Chip Capacitor
Kemet
Kemet
Illinois Cap
ATC
C15
C16
C19
2225X7R225KT3AB
MCGPR63V477M13X26--RH
Copper Foil
C23, C24, C25
470 μF 63V Electrolytic Capacitors
Jumpers from PCB to T1 & T2
17.5 nH, 6 Turn Inductor
Multicomp
J1, J2
L1
B06T
CoilCraft
CoilCraft
L2
8 Turn, #20 AWG ID = 0.125″ Inductor, Hand Wound
82 nH, Inductor
Copper Wire
L3
1812SMS--82NJ
Copper Wire
L4*
R1
T1
9 Turn, #18 AWG Inductor, Hand Wound
20 Ω, 3 W Axial Leaded Resistor
Balun
5093NW20R00J
TUI--9
Vishay
Comm Concepts
Comm Concepts
T2
Balun
TUO--4
*L4 is wrapped around R1.
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
3
- -
B1
C23
C13
C12
C11
C1+ 6
C22
C21
C20
C25 --
C24
L4, R1*
C15
C14
L3
L2
--
C18
C17
C9
C19
C8
C7
C10
T2
C6
T1
J1
J2
C4
C1 L1
C2
C5
C3 (on side)
MRF6VP2600H
225 MHz
Rev. 3
* L4 is wrapped around R1.
Figure 3. MRF6VP2600HR6 Test Circuit Component Layout
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
1000
100
10
100
C
iss
C
oss
T = 200_C
J
T = 175_C
J
T = 150_C
J
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
10
V
GS
C
rss
T
= 25_C
C
1
1
0
10
20
30
40
50
1
10
100
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
DS
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
26.5
64
62
60
58
56
80
Ideal
G
P3dB = 59.7 dBm (938 W)
ps
26
25.5
25
70
60
50
40
P2dB = 59.1 dBm (827 W)
V
= 50 Vdc, I = 2600 mA
DQ
DD
P1dB = 53.3 dBm (670 W)
Actual
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
24.5
24
η
D
30
20
23.5
54
52
V
= 50 Vdc, I = 2600 mA, f = 225 MHz
DQ
DD
10
0
23
Pulse Width = 12 μsec, Duty Cycle = 1%
22.5
10
100
, OUTPUT POWER (WATTS) PULSED
1000
27 28 29 30 31 32 33 34 35 36 37 38
P
P , INPUT POWER (dBm)
in
out
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed CW Output Power versus
Input Power
26
25
24
23
22
21
28
27
26
25
24
23
22
80
70
60
50
40
30
20
G
ps
T
= --30_C
C
50 V
25_C
85_C
45 V
40 V
V
= 50 Vdc, I = 2600 mA
DQ
DD
V
= 50 Vdc
= 2600 mA
η
D
DD
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
I
DQ
35 V
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
V
= 30 V
DD
21
10
10
1000
0
100
200
300
400
500
600
700
100
, OUTPUT POWER (WATTS) PULSED
P
, OUTPUT POWER (WATTS) PULSED
P
out
out
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 8. Pulsed Power Gain versus
Output Power
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — TWO--TONE
-- 20
-- 30
-- 40
-- 50
-- 60
-- 7 0
-- 10
V
= 50 Vdc, I = 2600 mA, f1 = 222 MHz
DQ
V
= 50 Vdc, P = 500 W (PEP), I = 2600 mA
out DQ
DD
DD
f2 = 228 MHz, Two--Tone Measurements
Two--Tone Measurements
-- 20
-- 30
-- 40
-- 50
3rd Order
3rd Order
5th Order
7th Order
5th Order
7th Order
-- 60
5
10
100
, OUTPUT POWER (WATTS) PEP
700
0.1
1
10
40
P
TWO--TONE SPACING (MHz)
out
Figure 10. Intermodulation Distortion
Products versus Output Power
Figure 11. Intermodulation Distortion
Products versus Tone Spacing
26
25.5
25
-- 20
-- 25
-- 30
-- 35
V
= 50 Vdc, f1 = 222 MHz, f2 = 228 MHz
DD
Two--Tone Measurements, 6 MHz Tone Spacing
I
= 2600 mA
DQ
2300 mA
2000 mA
I
= 1300 mA
2600 mA
DQ
24.5
-- 40
-- 45
-- 50
1800 mA
1800 mA
1300 mA
24
V
= 50 Vdc, f1 = 222 MHz, f2 = 228 MHz
DD
2000 mA
Two--Tone Measurements, 6 MHz Tone Spacing
2300 mA
23.5
20
100
700
20
100
, OUTPUT POWER (WATTS) PEP
700
P
P
, OUTPUT POWER (WATTS) PEP
out
out
Figure 13. Third Order Intermodulation
Distortion versus Output Power
Figure 12. Two--Tone Power Gain versus
Output Power
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS — OFDM
100
10
-- 20
-- 30
-- 40
7.61 MHz
1
-- 50
4 kHz BW
4 kHz BW
-- 60
-- 70
-- 80
-- 90
0.1
0.01
ACPR Measured at 4 MHz Offset
from Center Frequency
8K Mode DVB--T OFDM
64 QAM Data Carrier Modulation
5 Symbols
8K Mode DVB--T OFDM
64 QAM Data Carrier Modulation, 5 Symbols
0.001
--100
-- 11 0
0.0001
0
2
4
6
8
10
12
-- 5
-- 4
-- 3
-- 2
-- 1
0
1
2
3
4
5
PEAK--TO--AVERAGE (dB)
f, FREQUENCY (MHz)
Figure 14. Single--Carrier DVB--T OFDM
Figure 15. 8K Mode DVB--T OFDM Spectrum
25.8
-- 5 6
-- 5 8
-- 6 0
-- 6 2
V
= 50 Vdc, f = 225 MHz
DD
I
= 2600 mA
DQ
25.6
25.4
25.2
25
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
2300 mA
2000 mA
1800 mA
1300 mA
I
= 1300 mA
DQ
24.8
24.6
24.4
24.2
-- 6 4
-- 6 6
-- 6 8
1800 mA
2000 mA
V
= 50 Vdc, f = 225 MHz
DD
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
2300 mA
2600 mA
30
100
200
20
100
P , OUTPUT POWER (WATTS) AVG.
out
200
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 16. Single--Carrier DVB--T OFDM Power
Gain versus Output Power
Figure 17. Single--Carrier DVB--T OFDM ACPR
versus Output Power
45
40
35
-- 5 6
25_C
-- 3 0 _C
-- 5 8
-- 6 0
-- 6 2
-- 6 4
-- 6 6
-- 6 8
85_C
ACPR
η
D
30
25_C
T
= --30_C
C
G
ps
25
85_C
V
= 50 Vdc, I = 2600 MHz
DQ
DD
f = 225 MHz, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
20
15
30
100
, OUTPUT POWER (WATTS) AVG.
400
P
out
Figure 18. Single--Carrier DVB--T OFDM ACPR Power
Gain and Drain Efficiency versus Output Power
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
9
8
7
10
10
10
6
10
10
5
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 125 W Avg., and η = 28.5%.
DD
out
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 19. MTTF versus Junction Temperature -- CW
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
8
Z
source
f = 225 MHz
Z = 10 Ω
o
Z
load
f = 225 MHz
V
= 50 Vdc, I = 2600 mA, P = 125 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
225
1.42 + j8.09
4.45 + j1.16
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 20. Series Equivalent Source and Load Impedance
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
9
COAX1
C15
C16
C17
C18
+
C14
+
+
C1
J1
C3
B1
C5
R1
C7
C8
L3
L4
C4
L1
C9
T1
C10
L2
C2
C6
C11
C12
COAX3
C13
COAX2
88--108 MHz
MRF6VP2600KH Rev. 2
Figure 21. MRF6VP2600HR6 Test Circuit Component Layout — 88--108 MHz
Table 6. MRF6VP2600HR6 Test Circuit Component Designations and Values — 88--108 MHz
Part
Description
95 Ω, 100 MHz Long Ferrite Bead
6.8 μF, 50 V Chip Capacitor
30 pF Chip Capacitor
Part Number
Manufacturer
Fair--Rite
B1
C1
C2
2743021447
C4532X7R1H685K
TDK
ATC
ATC100B300JT500XT
ATC100B102JT50XT
GRM31CR72A105KA01L
ATC700B392JT50X
C3, C13, C14
C4, C5, C6
1000 pF Chip Capacitors
ATC
1 μF, 100 V Chip Capacitors
3900 pF Chip Capacitors
Murata
ATC
C7, C8, C9, C10,
C11, C12
C15
4.7 μF, 100 V Chip Capacitor
GRM55ER72A475KA01B
Murata
C16, C17
470 μF, 63 V Electrolytic Capacitors
220 μF, 100 V Electrolytic Capacitor
Jumper with Copper Tape
MCGPR63V477M13X26--RH
MCGPR100V227M16X26--RH
Multicomp
Multicomp
C18
J1
L1
82 nH Inductor
1812SMS--82NJ
Copper Wire
CoilCraft
L2
8 Turn, #14 AWG ID=0.250″ Inductor, Hand Wound
8 nH Inductors
Freescale
CoilCraft
L3, L4
R1
A03TKLC
15 Ω, 1/4 W Chip Resistor
CRCW120615R0FKEA
TUI--LF--9
Vishay
T1
Balun Transformer
Comm Concepts
Micro--Coax
Micro--Coax
Arlon
Coax1, Coax2
Coax3
PCB
25 Ω, Semi Rigid RF Cable, 3 mm Line, 16 cm Length
25 Ω, Semi Rigid RF Cable, 3 mm Line, 15 cm Length
UT--141C--25
UT--141C--25
GX0300--55--22
0.030″, ε = 2.55
r
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
10
TYPICAL CHARACTERISTICS — 88--108 MHz
30
29
28
27
26
25
85
108 MHz
V
= 50 Vdc, I = 150 mA
DD
DQ
80
75
70
65
60
55
98 MHz
88 MHz
108 MHz
G
ps
98 MHz
88 MHz
24
23
50
45
40
35
η
D
22
21
20
100
200
300
400
500 600 700 800
P
, OUTPUT POWER (WATTS)
out
Figure 22. Broadband CW Power Gain and Drain
Efficiency versus Output Power — 88--108 MHz
27
26.5
26
82
81
80
79
78
77
76
75
V
P
= 50 Vdc, I = 150 mA
= 600 W, CW
DD
out
DQ
25.5
25
G
ps
24.5
24
23.5
23
η
D
74
73
72
22.5
22
86
90
94
98
102
106
110
f, FREQUENCY (MHz)
Figure 23. CW Power Gain and Drain Efficiency
versus Frequency — 88--108 MHz
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
11
f = 88 MHz
f = 108 MHz
Z
source
Z = 25 Ω
o
Z
load
f = 108 MHz
f = 88 MHz
V
= 50 Vdc, I = 150 mA, P = 600 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
88
3.20 + j14.50
4.20 + j15.00
4.00 + j15.00
10.35 + j2.80
9.50 + j3.00
8.90 + j3.50
98
108
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 24. Series Equivalent Source and Load Impedance — 88--108 MHz
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
12
- - - -
C9
C11
C20
C22
MRF6VP2600H
352.2 MHz
Rev. 1
B1
C7
C5
L3
C18
L1
COAX1
COAX3
C14
C17
C3*
C13
C1
C15
C16
C2
C24*
C4*
COAX2
COAX4
L2
C19
L4
C6
C8
C10
B2
C21
C23
-- --
C12
*Mounted on side
Figure 25. MRF6VP2600HR6 Test Circuit Component Layout — 352.2 MHz
Table 7. MRF6VP2600HR6 Test Circuit Component Designations and Values — 352.2 MHz
Part
Description
47 Ω, 100 MHz Short Ferrite Beads
100 pF Chip Capacitors
Part Number
Manufacturer
B1, B2
C1, C2
2743019447
Fair--Rite
ATC100B101JT500XT
ATC100B221JT300XT
ATC100B200JT500XT
C1825C225J5RAC--TU
C1812C224K5RAC--TU
CDR33BX104AKWS
476KXM050M
ATC
C3*, C24*
C4*
22 pF Chip Capacitors
ATC
20 pF Chip Capacitor
ATC
C5, C6
C7, C8
C9, C10
C11, C12
C13
2.2 μF Chip Capacitors
Kemet
Kemet
AVX
220 nF Chip Capacitors
0.1 μF Chip Capacitors
47 μF, 50 V Electrolytic Capacitors
39 pF, 500 V Chip Capacitor
240 pF Chip Capacitors
Illinois Cap
CDE
MCM01--009DD390J--F
ATC100B241JT200XT
C14, C15, C16,
C17
ATC
C18, C19
2.2 μF Chip Capacitors
G2225X7R225KT3AB
ATC
C20, C21, C22,
C23
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
Coax1, 2, 3, 4
L1, L2
25 Ω, Semi Rigid Coax, 2.2″
UT141--25
A01TKLC
Precision Tube Company
Coilcraft
2.5 nH, 1 Turn Inductors
L3, L4
10 Turn, #16 AWG ID=0.160″ Inductors, Hand Wound
Copper Wire
Freescale
*Mounted on side
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
13
TYPICAL CHARACTERISTICS — 352.2 MHz
23
22
21
20
19
18
17
16
15
80
70
60
50
40
G
ps
V
= 50 Vdc
= 150 mA
DD
I
DQ
f = 352.2 MHz
η
D
30
20
10
0
10
100
, OUTPUT POWER (WATTS) CW
1000
P
out
Figure 26. CW Power Gain and Drain Efficiency
versus Output Power
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
14
Z = 10 Ω
o
f = 352.2 MHz
Z
source
f = 352.2 MHz
Z
load
V
= 50 Vdc, I = 150 mA, P = 600 W CW
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
352.2
1.10 + j3.80
2.26 + j3.57
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 27. Series Equivalent Source and Load Impedance — 352.2 MHz
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
15
PACKAGE DIMENSIONS
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
16
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
17
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Mar. 2008
July 2008
•
Initial Release of Data Sheet
Removed Capable of Handling 5:1 VSWR bullet, p. 1
Corrected Z and Z values from 1.58 + j6.47 to 1.42 + j8.09 and 4.60 + j1.85 to 4.45 + j1.16 and re-
•
•
source
load
plotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9
2
Sept. 2008
•
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to de-
note that each side of device is measured separately, p. 5
•
•
Updated Fig. 5, DC Safe Operating Area, to show one side of the device, p. 5
Figs. 21 and 27, Series Equivalent Source and Load Impedance, corrected Z
copy to read “Test circuit
source
impedance as measured from gate to gate, balanced configuration” and Z
copy to read “Test circuit
load
impedance as measured from gate to gate, balanced configuration”, p. 9, 14
2.1
4
Nov. 2008
May 2009
•
Corrected Figs. 21 and 27 Revision History Z copy to read ”Test circuit impedance as measured from
drain to drain, balanced configuration”, p. 9, 14
load
•
•
•
•
Updated bullets in Features section to reflect consistent listing across products, p. 1
Added thermal data for 352.2 MHz application to Table 2, Thermal Characteristics, p. 1
Added Typical Performances table for 352.2 MHz application, p. 2
Added Fig. 28, Test Circuit Component Layout -- 352.2 MHz and Table 7, Test Circuit Component Designations
and Values -- 352.2 MHz, p. 15
•
•
Added Fig. 29, CW Power Gain and Drain Efficiency versus Output Power -- 352.2 MHz p. 16
Added Fig. 30, Series Equivalent Source and Load Impedance -- 352.2 MHz, p. 17
4.1
June 2009
May 2010
•
Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, Table 5, Test Circuit
Component Designations and Values and Table 6, Test Circuit Component Designations and Values —
88--108 MHz, p. 3, 11
•
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 20
5
•
•
Changed 10--500 MHz to 2--500 MHz in Device Description box, p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
•
•
•
•
Added thermal data for 88--108 MHz application to Thermal Characteristics table, p. 1
Added Typical Performance table for 88--108 MHz application, p. 2
Removed Fig. 20, MTTF versus Junction Temperature -- Pulsed and renumbered accordingly, p. 8
Replaced Fig. 22 Test Circuit Component Layout, Table 6. Test Circuit Component Designations and Values,
the Typical Characteristic curves and Fig. 27 Series Impedance for 88--108 MHz with improved circuit
performance figures. The 88--108 MHz application circuit is also now a more compact size., p. 10--12
5.1
July 2010
•
Fig. 24, Series Impedance for 88--108 MHz, table and plot updated to reflect correct location of Z
and
source
Z
load
, p. 12
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
18
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Document Number: MRF6VP2600H
Rev. 5.1, 7/2010
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