MMRF1008H [NXP]
RF Power Field Effect Transistors;
| 型号： | MMRF1008H |
| 厂家： | 
NXP |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总19页 (文件大小：1196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMRF1008H
Rev. 1, 5/2016
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MMRF1008H
MMRF1008HS
MMRF1008GH
N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for applications operating at frequencies
from 900 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications, such as IFF and DME.
Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout =
275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 sec,
Duty Cycle = 10%
960--1215 MHz, 275 W, 50 V
PULSE
Power Gain — 20.3 dB
Drain Efficiency — 65.5%
LATERAL N--CHANNEL
RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout
250 W Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =
128 sec, Duty Cycle = 10%
=
NI--780H--2L
MMRF1008H
Power Gain — 19.8 dB
Drain Efficiency — 58%
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--780S--2L
MMRF1008HS
NI--780GH--2L
MMRF1008GH
Gate
Drain
1
2
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2013, 2016. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +100
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
C
(1)
T
J
225
C
Table 2. Thermal Characteristics
(2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Z
0.08
C/W
JC
Case Temperature 80C, 275 W Peak 128 sec Pulse Width, 10% Duty Cycle,
50 Vdc, I = 100 mA, 1030 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2600 V
B, passes 200 V
IV, passes 2000 V
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
110
—
—
—
—
—
10
—
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
10
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
100
(V = 90 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 662 Adc)
V
V
0.9
1.7
—
1.7
2.4
2.4
3.2
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.6 Adc)
V
0.25
GS
D
(3)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.46
352
695
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. Part internally matched both on input and output.
(continued)
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 275 W Peak (27.5 W Avg.), f = 1030 MHz,
DD
DQ
out
Pulse, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
G
19
20.3
65.5
-- 1 4
22
—
-- 9
dB
%
ps
Drain Efficiency
63
D
Input Return Loss
IRL
—
dB
Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) V = 50 Vdc,
DD
I
= 100 mA, P = 250 W Peak (25 W Avg.), f = 960--1215 MHz, Pulse, 128 sec Pulse Width, 10% Duty Cycle
DQ
out
Power Gain
Drain Efficiency
G
—
—
19.8
58
—
dB
%
ps
D
—
Table 5. Ordering Information
Device
Tape and Reel Information
Package
MMRF1008HR5
NI--780H--2L
NI--780S--2L
NI--780GH--2L
MMRF1008HSR5
MMRF1008GHR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GH) parts.
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
3
V
SUPPLY
+
+
R4
R3
V
BIAS
C12
C13
C14
C15
C8
C7
C6
Z14
RF
OUTPUT
Z11
Z10
Z13
Z16 Z17 Z18 Z19 Z20 Z21 Z22
Z23
RF
INPUT
C5
C9
Z1
Z2 Z3 Z4 Z5 Z6 Z7
Z8
R2
Z9
Z15
C1
DUT
C4
Z12
R1
C10
C11
C2
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.055 x 0.082 Microstrip
0.100 x 0.082 Microstrip
0.084 x 0.395 Microstrip
0.419 x 0.040 Microstrip
0.498 x 0.466 Microstrip
0.110 x 1.060 Microstrip
0.050 x 1.300 Microstrip
0.092 x 1.300 Microstrip
0.219 x 1.420 Microstrip
0.087 x 1.420 Microstrip
0.187 x 0.050 Microstrip
Z13
Z14, Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
0.190 x 1.250 Microstrip
0.517 x 0.080 Microstrip
0.225 x 1.250 Microstrip
0.860 x 0.975 Microstrip
0.140 x 0.950 Microstrip
0.028 x 0.110 Microstrip
0.397 x 0.040 Microstrip
0.264 x 0.480 Microstrip
0.100 x 0.082 Microstrip
0.521 x 0.082 Microstrip
Z9
Z10
Z11, Z12
Z23
PCB
Arlon CuClad 250GX--0300--55--22, 0.030, = 2.55
r
Figure 2. MMRF1008H(HS) Test Circuit Schematic
Table 6. MMRF1008H(HS) Test Circuit Component Designations and Values
Part
Description
Part Number
ATC100B1R5BT500XT
G2225X7R225KT3AB
ATC100B330JT500XT
TPSD226M025R0200
ATC100B9R1CT500XT
MCGPA63V477M13X26--RH
CRCW12060000Z0EA
Manufacturer
ATC
C1, C4, C5
1.5 pF Chip Capacitors
C2, C7, C11, C13
C3, C6, C10, C12
C8
2.2 F, 100 V Chip Capacitors
33 pF Chip Capacitors
ATC
ATC
22 F, 25 V Chip Capacitor
9.1 pF Chip Capacitor
AVX
C9
ATC
C14, C15
470 F, 63 V Electrolytic Capacitors
0 , 3.5 A Chip Resistors
Multicomp
Vishay
R1, R2, R3, R4
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
4
R4
C8
C7
C15
C14
C13
R3
C6
C5
C4
C12
C10
C1
C9
C3
R2
C11
C2
R1
Figure 3. MMRF1008H(HS) Test Circuit Component Layout
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
1000
100
160
140
C
oss
C
iss
120
100
80
P
= 250 W
out
P
= 275 W
out
10
1
P
= 200 W
out
60
40
V
= 50 Vdc, I = 100 mA
DQ
DD
C
rss
20
0
Measured with 30 mV(rms)ac @ 1 MHz
f = 1030 MHz, Pulse Width = 128 sec
V
= 0 Vdc
GS
0.1
0
5
10
15
20
25
30
35
40
0
10
V
20
30
40
50
DUTY CYCLE (%)
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Figure 5. Safe Operating Area
Figure 4. Capacitance versus Drain--Source Voltage
24
70
60
59
58
Ideal
P3dB = 55.29 dBm (338 W)
22
20
P1dB = 54.76 dBm (299 W)
57
56
55
54
53
52
51
50
49
48
60
50
40
30
G
ps
Actual
D
18
16
V
= 50 Vdc, I = 100 mA, f = 1030 MHz
DQ
V
= 50 Vdc, I = 100 mA, f = 1030 MHz
DQ
Pulse Width = 128 sec, Duty Cycle = 10%
DD
DD
Pulse Width = 128 sec, Duty Cycle = 10%
50
100
400
28
30
32
34
36
38
40
P
, OUTPUT POWER (WATTS) PEAK
P , INPUT POWER (dBm) PEAK
in
out
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Output Power versus Input Power
22
21
20
19
18
17
22
21
I
= 100 mA, f = 1030 MHz
DQ
Pulse Width = 128 sec
I
= 400 mA
DQ
Duty Cycle = 10%
20
19
18
17
16
15
300 mA
200 mA
100 mA
50 V
45 V
V
= 50 Vdc, f = 1030 MHz
40 V
DD
V
= 30 V 35 V
DD
Pulse Width = 128 sec, Duty Cycle = 10%
50
100
400
50
100
, OUTPUT POWER (WATTS) PEAK
400
P
, OUTPUT POWER (WATTS) PEAK
P
out
out
Figure 9. Power Gain versus Output Power
Figure 8. Power Gain versus Output Power
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
400
300
200
100
0
24
72
60
-- 3 0 _C
85_C
T
= --30_C
C
25_C
55_C
85_C
25_C
55_C
G
22
20
18
16
ps
T
= --30_C
C
25_C
48
36
55_C
85_C
V
= 50 Vdc, I = 100 mA, f = 1030 MHz
DQ
Pulse Width = 128 sec, Duty Cycle = 10%
DD
V
= 50 Vdc, I = 100 mA, f = 1030 MHz
DQ
Pulse Width = 128 sec, Duty Cycle = 10%
DD
D
24
0
1
2
3
4
5
6
50
100
400
P , INPUT POWER (WATTS) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 10. Output Power versus Input Power
Figure 11. Power Gain and Drain Efficiency versus
Output Power
9
10
8
10
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 275 W Peak, Pulse Width = 128 sec,
DD
out
Duty Cycle = 10%, and = 65.5%.
D
Figure 12. MTTF versus Junction Temperature — Pulse
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
7
Z = 5
o
Z
load
f = 1030 MHz
Z
source
f = 1030 MHz
f
Z
Z
load
source
MHz
1030
2.30 -- j3.51
4.0 -- j2.14
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
8
C8
C6
C4
C14
C13
C10
C2
C12
R1
C1
C11
C3
C5
C9
C7
R2
Figure 14. MMRF1008H(HS) Test Circuit Component Layout — 960--1215 MHz
Table 7. MMRF1008H(HS) Test Circuit Component Designations and Values — 960--1215 MHz
Part
Description
Part Number
ATC100B2R7BT500XT
ATC100B330JT500XT
ATC100B102JT50XT
G2225X7R225KT3AB
ATC100B9R1CT500XT
TPSD226M025R0200
MCGPR63V477M13X26--RH
CRCW120647R0FKEA
AD255A
Manufacturer
ATC
C1
2.7 pF Chip Capacitor
C2, C3, C4, C5
C6, C7
33 pF Chip Capacitors
ATC
1000 pF Chip Capacitors
ATC
C8, C9, C10
C11
2.2 F, 100 V Chip Capacitors
9.1 pF Chip Capacitor
ATC
ATC
C12
22 F, 25 V Tantalum Capacitor
470 F, 63 V Electrolytic Capacitors
47 , 1/4 W Chip Resistors
AVX
C13, C14
R1, R2
Multicomp
Vishay
Arlon
PCB
0.030, = 2.55
r
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — 960--1215 MHz
26
70
V
= 50 Vdc
f = 1215 MHz
DD
I
= 100 mA
1150 MHz
DQ
24 Pulse Width = 128 sec
60
50
40
Duty Cycle = 10%
1030 MHz
1150 MHz
960 MHz
22
D
1215 MHz
20
G
ps
960 MHz
18
16
30
20
1030 MHz
0
50
100
150
200
250
300
350
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 15. Power Gain and Drain Efficiency versus
Output Power
68
21
20
19
18
17
16
15
14
13
66
64
62
60
58
0
G
ps
D
IRL
-- 5
-- 1 0
V
= 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.)
DQ out
Pulse Width = 128 sec, Duty Cycle = 10%
DD
12
11
-- 1 5
-- 2 0
950 975 1000 1025 1050 1075 1100 1125 1150 1175 1200 1225
f, FREQUENCY (MHz)
Figure 16. Broadband Performance @ Pout = 250 Watts Peak
MMRF1008H MMRF1008HS MMRF1008GH
10
RF Device Data
Freescale Semiconductor, Inc.
Z = 10
o
Z
load
f = 960 MHz
f = 1215 MHz
f = 1215 MHz
f = 960 MHz
Z
source
f
Z
Z
load
f
Z
Z
load
source
source
MHz
MHz
960
4.00 -- j4.14
4.05 -- j3.99
4.16 -- j3.86
4.33 -- j3.71
4.49 -- j3.57
4.61 -- j3.43
4.66 -- j3.33
4.68 -- j3.26
4.72 -- j3.20
4.83 -- j3.13
5.02 -- j3.06
5.24 -- j2.99
5.42 -- j2.96
5.51 -- j2.99
3.96 -- j1.70
3.90 -- j1.67
3.83 -- j1.66
3.75 -- j1.66
3.70 -- j1.65
3.68 -- j1.62
3.69 -- j1.59
3.69 -- j1.54
3.67 -- j1.52
3.59 -- j1.53
3.48 -- j1.53
3.38 -- j1.53
3.32 -- j1.51
3.30 -- j1.47
1100
1110
1120
1130
1140
1150
1160
1170
1180
1190
1200
1210
1215
5.49 -- j3.04
5.47 -- j3.07
5.52 -- j3.09
5.68 -- j3.13
5.89 -- j3.20
6.06 -- j3.32
6.09 -- j3.47
5.98 -- j3.60
5.85 -- j3.69
5.78 -- j3.76
5.81 -- j3.87
5.89 -- j4.02
5.91 -- j4.11
3.32 -- j1.43
3.31 -- j1.42
3.24 -- j1.40
3.12 -- j1.39
2.99 -- j1.36
2.88 -- j1.30
2.83 -- j1.23
2.83 -- j1.19
2.80 -- j1.15
2.75 -- j1.11
2.65 -- j1.07
2.52 -- j1.01
2.47 -- j0.97
970
980
990
1000
1010
1020
1030
1040
1050
1060
1070
1080
1090
Z
Z
=
=
Test circuit impedance as measured from gate to ground.
Test circuit impedance as measured from drain to ground.
source
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 17. Series Equivalent Source and Load Impedance — 960--1215 MHz
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
11
PACKAGE DIMENSIONS
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
12
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
13
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
14
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
15
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
16
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
17
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Dec. 2013
May 2016
Initial Release of Data Sheet
Added part number MMRF1008GH, p. 1
Added NI--780GH--2L package photo, p. 1, and Mechanical Outline, pp. 16--17
Added Fig. 1, Pin Connections, p. 1
Table 5, Ordering Information: tape and reel information, p. 1, placed in Ordering Information table, p. 3
MMRF1008H MMRF1008HS MMRF1008GH
RF Device Data
Freescale Semiconductor, Inc.
18
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E 2013, 2016 Freescale Semiconductor, Inc.
Document Number: MMRF1008H
Rev. 1, 5/2016
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