MMRF1007HSR5 [NXP]
RF Power Field Effect Transistors;
| 型号： | MMRF1007HSR5 |
| 厂家： | 
NXP |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总17页 (文件大小：855K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMRF1007H
Rev. 0, 12/2013
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MMRF1007HR5
MMRF1007HSR5
RF power transistors designed for applications operating at frequencies
from 900 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications, such as IFF and DME.
Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout =
1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty
965--1215 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
Cycle = 10%
Power Gain — 20 dB
Drain Efficiency — 56%
RF POWER MOSFETs
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--1230H--4S
MMRF1007HR5
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230S--4S
MMRF1007HSR5
PARTS ARE PUSH--PULL
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
C
(1)
T
J
225
C
1. Continuous use at maximum temperature will affect MTTF.
Freescale Semiconductor, Inc., 2013. All rights reserved.
Table 2. Thermal Characteristics
(1)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Z
C/W
JC
Case Temperature 67C, 1000 W Peak, 128 sec Pulse Width, 10% Duty Cycle,
0.02
0.07
50 Vdc, I = 150 mA
DQ
Case Temperature 62C, Mode--S Pulse Train, 80 Pulses of 32 sec On, 18 sec
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, I = 150 mA
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
B
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(2)
Off Characteristics
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
—
110
—
—
—
—
—
10
—
Adc
Vdc
GSS
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 165 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
10
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
100
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(2)
Gate Threshold Voltage
(V = 10 Vdc, I = 1000 Adc)
V
0.9
1.5
—
1.6
2.2
2.4
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(3)
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
V
DD
D
(2)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.7 Adc)
V
0.15
—
GS
D
(2)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
1.27
86.7
539
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
(3)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak (100 W Avg.),
DD DQ out
f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
G
19
20
56
22
—
-- 9
dB
%
ps
D
Drain Efficiency
54
Input Return Loss
IRL
—
-- 2 3
dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
2. Each side of device measured separately.
3. Measurement made with device in push--pull configuration.
(continued)
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak
DD
DQ
out
(100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 sec On, 18 sec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle
Power Gain
G
—
—
—
19.8
59.0
0.21
—
—
—
dB
%
ps
D
Drain Efficiency
Burst Droop
BD
dB
rp
Typical Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak
DD
DQ
out
(100 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
G
—
21.4
56.3
—
dB
%
ps
D
Drain Efficiency
—
—
—
Input Return Loss
IRL
--25.3
—
dB
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
3
V
BIAS
V
+
SUPPLY
+
+
C1
C2
C3
C4
C21 C22
C23 C24
L1
BALUN 1
C13
Z13
R1
C17
C18
Z11
Z15 Z17 Z19 Z21
Z3 Z5
Z4 Z6
Z7
Z9
RF
RF
OUTPUT
INPUT
C10
Z1
Z2
Z23
DUT
C15
C12
Z10
C16
Z8
C9
C11
Z12
Z14
C14
Z16 Z18 Z20 Z22
R2
C19
C20
BALUN 2
L2
V
BIAS
+
C5
C6
C7
C8
V
SUPPLY
+
+
C25 C26 C27 C28
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
0.140 x 0.083
0.300 x 0.083
0.746 x 0.220
0.075 x 0.631
0.329 x 0.631
0.326 x 0.631
0.240 x 0.631
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z23
0.143 x 0.631
0.135 x 0.631
0.102 x 0.632
0.130 x 0.631
0.736 x 0.215
0.410 x 0.083
Z11, Z12
PCB
Arlon CuClad 250GX--0300--55--22, 0.030, = 2.55
r
Figure 2. MMRF1007HR5(HSR5) Test Circuit Schematic
Table 5. MMRF1007HR5(HSR5) Test Circuit Component Designations and Values
Part
Description
Manufacturer
Part Number
Anaren
Balun 1, 2
C1, C5
Balun Anaren
3A412
22 F, 25 V Tantalum Capacitors
2.2 F, 50 V Chip Capacitors
0.22 F, 100 V Chip Capacitors
36 pF Chip Capacitors
TPSD226M025R
AVX
C2, C6
C1825C225J5RAC
C1210C224K1RAC
ATC100B360JT500XT
Kemet
Kemet
ATC
C3, C7
C4, C8, C17, C18, C19,
C20, C21, C25
C9
1.0 pF Chip Capacitor
ATC100B1R0CT500XT
27291SL
ATC
C12, C16
0.8--8.0 pF Variable Capacitors
5.1 pF Chip Capacitors
Johanson
ATC
C10, C11, C13, C14, C15
C22, C26
ATC100B5R1CT500XT
C1825C223K1GAC
MCGPR63V477M13X26--RH
GA3094--AL
0.022 F, 100 V Chip Capacitors
470 F, 63 V Electrolytic Capacitors
Inductors 3 Turn
Kemet
C23, C24, C27, C28
L1, L2
Multicomp
Coilcraft
Vishay
R1, R2
1000 , 1/3 W Chip Resistors
CRCW12101001FKEA
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
4
C24
C23
C1
C3
C4
--
C22
C2
C21
L1
BALUN 1
BALUN 2
C13
R1
R2
C12
C17
C18
C10
C11
C16
C15
C19
C20
C9
L2
C14
C8
C7
C26
C6
C25
C5
C27
C28
--
Figure 3. MMRF1007HR5(HSR5) Test Circuit Component Layout
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
1000
100
10
22
60
50
40
30
20
10
0
V
= 50 Vdc
= 150 mA
DD
C
iss
I
DQ
21
20
19
18
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
G
ps
C
oss
Measured with 30 mV(rms)ac @ 1 MHz
= 0 Vdc
C
rss
V
GS
D
17
16
1
0
10
20
30
40
50
1
10
100
1000
10000
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
P , OUTPUT POWER (WATTS) PEAK
out
DS
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. Power Gain and Drain Efficiency
versus Output Power
25
24
23
22
21
20
19
18
17
16
22
Ideal
21.5
21
I
= 6000 mA
DQ
P1dB = 1065 W (60.3 dBm)
20.5
20
3000 mA
1500 mA
P3dB = 1182 W (60.7 dBm)
19.5
19
V
I
= 50 Vdc
= 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
750 mA
375 mA
DD
V
= 50 Vdc
DD
DQ
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
18.5
18
Actual
150 mA
500
600
700
800
900
1000 1100 1200 1300
1
10
100
1000
10000
P
, OUTPUT POWER (WATTS) PEAK
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 7. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
23
22
21
20
19
65
I
= 150 mA, f = 1030 MHz
DQ
Pulse Width = 128 sec
Duty Cycle = 10%
60
55
50
45
40
T
= --30_C
C
25_C
V
= 50 Vdc
DD
18
17
16
I
= 150 mA
DQ
45 V
1000
V
= 30 V
400
40 V
800
50 V
1200
35 V
600
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
DD
85_C
0
200
1400
20
25
30
35
40
45
P , INPUT POWER (dBm) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 8. Power Gain versus Output Power
Figure 9. Output Power versus Input Power
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
23
22
21
20
19
18
17
16
70
60
50
40
30
V
I
= 50 Vdc
= 150 mA
DD
DQ
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
G
ps
T
= --30_C
C
20
10
0
25_C
85_C
D
1
10
100
1000
10000
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 10. Power Gain and Drain Efficiency
versus Output Power
9
8
7
9
10
10
10
10
8
10
7
10
6
6
10
10
10
5
5
10
4
4
10
10
90
110
130
150
170
190
210
230
250
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
T , JUNCTION TEMPERATURE (C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1000 W Peak, Pulse Width = 128 sec,
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1000 W Peak, Mode--S Pulse Train,
DD
out
DD
out
Duty Cycle = 10%, and = 56%.
Pulse Width = 32 sec, Duty Cycle = 6.4%, and = 59%.
D
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature --
Figure 12. MTTF versus Junction Temperature --
Mode--S
128 sec, 10% Duty Cycle
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
7
Z = 5
o
f = 1030 MHz
Z
load
f = 1030 MHz
Z
source
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
1030
3.93 + j0.09
1.54 + j1.42
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
8
- -
C24
C23
C1
C3
C4
C22
C2
C21
BALUN 1
BALUN 2
C13
C15
R1
L1
C16
C12
C17
C10
C11
C29
C18
C19
C20
C9
L2
R2
C14
C8
C7
C26
C6
C25
- -
C5
C27
C28
Figure 14. MMRF1007HR5(HSR5) Test Circuit Component Layout — 1090 MHz
Table 6. MMRF1007HR5(HSR5) Test Circuit Component Designations and Values — 1090 MHz
Part
Description
Manufacturer
Part Number
Balun 1, 2
C1, C5
Balun Anaren
3A412
Anaren
22 F, 25 V Tantalum Capacitors
2.2 F, 50 V 1825 Chip Capacitors
0.22 F, 100 V Chip Capacitors
36 pF Chip Capacitors
TPSD226M025R0200
C1825C225J5RAC--TU
C1210C224K1RAC--TU
ATC100B360JT500XT
AVX
C2, C6
Kemet
Kemet
ATC
C3, C7
C4, C8, C17, C18, C19,
C20, C21, C25
C9
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
27291SL
ATC
C12, C16
0.8--8.0 pF Variable Capacitors
5.1 pF Chip Capacitors
Johanson
ATC
C10, C11, C13, C14, C15,
C29
ATC100B5R1CT500XT
C22, C26
C23, C24, C27, C28
L1, L2
0.022 F, 100 V Chip Capacitors
470 F, 63 V Electrolytic Capacitors
Inductors 3 Turn
C1825C223K1GAC
MCGPR63V477M13X26--RH
GA3094--ALC
Kemet
Multicomp
Coilcraft
Vishay
Arlon
R1, R2
1000 , 1/4 W Chip Resistors
CRCW12061K00FKEA
250GX--0300--55--22
PCB
CuClad, 0.030, = 2.55
r
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — 1090 MHZ
22
21
20
19
18
17
16
60
50
V
= 50 Vdc
= 150 mA
DD
I
DQ
f = 1090 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
40
30
20
10
0
G
ps
D
10
100
1000
3000
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 15. Power Gain and Drain Efficiency
versus Output Power
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
10
Z = 5
o
f = 1090 MHz
f = 1090 MHz
Z
source
Z
load
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
1090
2.98 + j3.68
1.51 + j2.02
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance — 1090 MHz
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
11
PACKAGE DIMENSIONS
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
12
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
13
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
14
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2013
Initial Release of Data Sheet
MMRF1007HR5 MMRF1007HSR5
RF Device Data
Freescale Semiconductor, Inc.
16
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E 2013 Freescale Semiconductor, Inc.
Document Number: MMRF1007H
Rev. 0, 12/2013
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