GTL2003PW,118 [NXP]
GTL2003 - 8-bit bidirectional low voltage translator TSSOP2 20-Pin;
| 型号： | GTL2003PW,118 |
| 厂家： | 
NXP |
| 描述： | GTL2003 - 8-bit bidirectional low voltage translator TSSOP2 20-Pin 光电二极管 接口集成电路 |
| 文件： | 总24页 (文件大小：399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTL2003
8-bit bidirectional low voltage translator
Rev. 2 — 3 July 2012
Product data sheet
1. General description
The Gunning Transceiver Logic - Transceiver Voltage Clamps (GTL-TVC) provide
high-speed voltage translation with low ON-state resistance and minimal propagation
delay. The GTL2003 provides eight NMOS pass transistors (Sn and Dn) with a common
gate (GREF) and a reference transistor (SREF and DREF). The device allows
bidirectional voltage translations between 0.8 V and 5.0 V without use of a direction pin.
Voltage translation below 0.8 V can be achieved when properly biased. For more
information, refer to application note AN11127 (Ref. 1).
When the Sn or Dn port is LOW, the clamp is in the ON-state and a low resistance
connection exists between the Sn and Dn ports. Assuming the higher voltage is on the Dn
port, when the Dn port is HIGH, the voltage on the Sn port is limited to the voltage set by
the reference transistor (SREF). When the Sn port is HIGH, the Dn port is pulled to VDD1
by the pull-up resistors. This functionality allows a seamless translation between higher
and lower voltages selected by the user, without the need for directional control.
All transistors have the same electrical characteristics and there is minimal deviation from
one output to another in voltage or propagation delay. This is a benefit over discrete
transistor voltage translation solutions, since the fabrication of the transistors is
symmetrical. Because all transistors in the device are identical, SREF and DREF can be
located on any of the other eight matched Sn/Dn transistors, allowing for easier board
layout. The translator's transistors provide excellent ESD protection to lower voltage
devices and at the same time protect less ESD-resistant devices.
2. Features and benefits
8-bit bidirectional low voltage translator
Allows voltage level translation between 0.8 V, 0.9 V, 1.0 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V,
3.3 V, and 5 V buses which allows direct interface with GTL, GTL+, LVTTL/TTL and
5 V CMOS levels
Provides bidirectional voltage translation with no direction pin
Low 6.5 ON-state resistance (Ron) between input and output pins (Sn/Dn)
Supports hot insertion
No power supply required: will not latch up
5 V tolerant inputs
Low standby current
Flow-through pinout for ease of printed-circuit board trace routing
ESD protection exceeds 2000 V HBM per JESD22-A114, and 1000 V CDM per
JESD22-C101
Packages offered: TSSOP20, DHVQFN20
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
3. Applications
Any application that requires bidirectional or unidirectional voltage level translation
from any voltage from 0.8 V to 5.0 V to any voltage from 0.8 V to 5.0 V
The open-drain construction with no direction pin is ideal for bidirectional low voltage
(for example, 0.8 V, 0.9 V, 1.0 V, 1.2 V, 1.5 V, or 1.8 V) processor I2C-bus port
translation to the normal 3.3 V and/or 5.0 V I2C-bus signal levels or GTL/GTL+
translation to LVTTL/TTL signal levels.
4. Ordering information
Table 1.
Ordering information
Type number Package
Name
Description
Version
GTL2003BQ
DHVQFN20 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 20 terminals;
body 2.5 4.5 0.85 mm
SOT764-1
GTL2003PW TSSOP20
plastic thin shrink small outline package; 20 leads;
body width 4.4 mm
SOT360-1
4.1 Ordering options
Table 2.
Ordering options
Topside mark
Type number
GTL2003BQ
GTL2003PW
Temperature range
40 C to +85 C
40 C to +85 C
2003
GTL2003
5. Functional diagram
DREF
GREF
D1
D8
SREF
S1
S8
002aac641
Fig 1. Functional diagram
GTL2003
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
2 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
6. Pinning information
6.1 Pinning
terminal 1
index area
2
3
4
5
6
7
8
9
19
18
17
16
15
14
13
12
SREF
S1
DREF
D1
1
2
20
19
18
17
16
15
14
13
12
11
GND
SREF
S1
GREF
DREF
D1
S2
D2
S3
D3
3
GTL2003BQ
S4
D4
4
S2
D2
5
S3
D3
S5
D5
GTL2003PW
6
S4
D4
S6
D6
7
S5
D5
S7
D7
8
S6
D6
9
S7
D7
002aac640
10
S8
D8
002aac639
Transparent top view
Fig 2. Pin configuration for TSSOP20
Fig 3. Pin configuration for DHVQFN20
6.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
GND
1[1]
ground (0 V)
SREF
2
source of reference transistor
Port S1 to Port S8
S1 to S8
D1 to D8
DREF
3, 4, 5, 6, 7, 8, 9, 10
18, 17, 16, 15, 14, 13, 12, 11
Port D1 to Port D8
19
20
drain of reference transistor
gate of reference transistor
GREF
[1] DHVQFN20 package die supply ground is connected to both GND pin and exposed center pad. GND pin
must be connected to supply ground for proper device operation. For enhanced thermal, electrical, and
board level performance, the exposed pad needs to be soldered to the board using a corresponding
thermal pad on the board and for proper heat conduction through the board, thermal vias need to be
incorporated in the printed-circuit board in the thermal pad region.
GTL2003
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
3 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
7. Functional description
Refer also to Figure 1 “Functional diagram”.
7.1 Function selection
Table 4.
Function selection, HIGH-to-LOW translation
Assumes Dn is at the higher voltage level.
H = HIGH voltage level; L = LOW voltage level; X = Don’t care
GREF[1]
DREF
SREF
Input Dn
Output Sn
Transistor
H
H
H
L
H
H
H
L
0 V
X
H
L
X
off
on
on
off
[2]
[2][3]
VT
VT
L[4]
[2]
VT
[2]
0 V VT
X
X
[1] GREF should be at least 1.5 V higher than SREF for best translator operation.
[2] VT is equal to the SREF voltage.
[3] Sn is not pulled up or pulled down.
[4] Sn follows the Dn input LOW.
Table 5.
Function selection, LOW-to-HIGH translation
Assumes Dn is at the higher voltage level.
H = HIGH voltage level; L = LOW voltage level; X = Don’t care
GREF[1]
DREF
SREF
Input Sn
Output Dn
Transistor
H
H
H
L
H
H
H
L
0 V
X
X
off
[2]
[2]
VT
VT
H[3]
L[4]
X
nearly off
[2]
VT
L
on
off
[2]
0 V VT
X
[1] GREF should be at least 1.5 V higher than SREF for best translator operation.
[2] VT is equal to the SREF voltage.
[3] Dn is pulled up to VDD1 through an external resistor.
[4] Dn follows the Sn input LOW.
GTL2003
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
4 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
8. Application design-in information
8.1 Bidirectional translation
For the bidirectional clamping configuration, higher voltage to lower voltage or lower
voltage to higher voltage, the GREF input must be connected to DREF and both pins
pulled to HIGH side VDD1 through a pull-up resistor (typically 200 k). A filter capacitor on
DREF is recommended. The processor output can be totem pole or open-drain (pull-up
resistors may be required) and the chip set output can be totem pole or open-drain
(pull-up resistors are required to pull the Dn outputs to VDD1). However, if either output is
totem pole, data must be unidirectional or the outputs must be 3-stateable and the outputs
must be controlled by some direction control mechanism to prevent HIGH-to-LOW
contentions in either direction. If both outputs are open-drain, no direction control is
needed. The opposite side of the reference transistor (SREF) is connected to the
processor core power supply voltage. When DREF is connected through a 200 k
resistor to a 3.3 V to 5.5 V VDD1 supply and SREF can be set between 0.8 V to
(VDD1 1.5 V), without the need for pull-up resistors on the low voltage side. The output of
each Sn will have a maximum output voltage equal to SREF and the output of each Dn
has a maximum output voltage equal to VDD1. It is recommended that VDD1 be greater
than 1.5 V for proper operation.
1.8 V
1.5 V
1.2 V
1.0 V
0.8 V
5 V
200 kΩ
totem pole or
open-drain I/O
GTL2002
GND GREF
SREF
S1
DREF
D1
V
V
CORE
DD1
CPU I/O
CHIPSET I/O
S2
D2
increase bit size
by using 8-bit GTL2003,
10-bit GTL2010,
3.3 V
or 22-bit GTL2000
V
DD2
S3
S4
S5
Sn
D3
D4
D5
Dn
CHIPSET I/O
002aac642
Typical bidirectional voltage translation.
Fig 4. Bidirectional translation to multiple higher voltage levels such as an I2C-bus
application
GTL2003
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
5 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
8.2 Unidirectional down translation
For unidirectional clamping, higher voltage to lower voltage, the GREF input must be
connected to DREF and both pins pulled to the higher side VDD1 through a pull-up resistor
(typically 200 k). A filter capacitor on DREF is recommended. Pull-up resistors are
required if the chip set I/O are open-drain. The opposite side of the reference transistor
(SREF) is connected to the processor core supply voltage. When DREF is connected
through a 200 k resistor to a 3.3 V to 5.5 V VDD1 supply and SREF can be set between
0.8 V to (VDD1 1.5 V), without the need for pull-up resistors on the low voltage side. The
output of each Sn will have a maximum output voltage equal to SREF. It is recommended
that VDD1 be greater than 1.5 V for proper operation.
1.8 V
1.5 V
1.2 V
1.0 V
5 V
200 kΩ
0.8 V
GTL2003
GND GREF
easy migration to lower voltage
as processor geometry shrinks
V
SREF
S1
S2
DREF
D1
V
DD1
CORE
CPU I/O
CHIPSET I/O
totem pole I/O
002aac061
D2
S8
D8
Typical unidirectional HIGH-to-LOW voltage translation.
Fig 5. Unidirectional down translation to protect low voltage processor pins
8.3 Unidirectional up translation
For unidirectional up translation, lower voltage to higher voltage, the reference transistor
is connected the same as for a down translation. A pull-up resistor is required on the
higher voltage side (Dn or Sn) to get the full HIGH level, since the GTL-TVC device will
only pass the reference source (SREF) voltage as a HIGH when doing an up translation.
The driver on the lower voltage side only needs pull-up resistors if it is open-drain.
1.8 V
1.5 V
1.2 V
1.0 V
0.8 V
5 V
200 kΩ
GTL2003
GND GREF
easy migration to lower voltage
as processor geometry shrinks
V
SREF
S1
S2
DREF
D1
V
DD1
CORE
CPU I/O
CHIPSET I/O
D2
totem pole I/O
or open-drain
S8
D8
002aac062
Typical unidirectional LOW-to-HIGH voltage translation.
Fig 6. Unidirectional down translation to protect low voltage processor pins
GTL2003
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
6 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
8.4 Sizing pull-up resistor
The pull-up resistor value needs to limit the current through the pass transistor when it is
in the ‘on’ state to about 15 mA. This will guarantee a pass voltage of 260 mV to 350 mV.
If the current through the pass transistor is higher than 15 mA, the pass voltage will also
be higher in the ‘on’ state. To set the current through each pass transistor at 15 mA, the
pull-up resistor value is calculated as shown in Equation 1:
pull-up voltage V – 0.35 V
resistor value =
(1)
---------------------------------------------------------------------------
0.015 A
When using open-drain devices, it is always required to use pull-up resistors at D-side,
and they must be sized so as not to overload the output. If VDD1 VSREF < 1.5 V, then
pull-up resistor is required on S-side to pull up the Sn outputs to VSREF. It is important to
note that if pull-up resistors are required on both the S-side and D-side, the equivalent
pull-up resistor value becomes the parallel combination of the two resistors when pass
transistor is ON. If VDD1 VSREF 1.5 V, then pull-up resistors on the S-side are not
required.
Table 6 summarizes resistor values for various reference voltages and currents at 15 mA
and also at 10 mA and 3 mA for VDD1 VSREF 1.5 V. The resistor value shown in the
+10 % column or a larger value should be used to ensure that the pass voltage of the
transistor would be 350 mV or less. The external driver must be able to sink the total
current from the resistors on both sides of the GTL-TVC device at 0.175 V, although the
15 mA only applies to current flowing through the GTL-TVC device. See application note
AN10145, “Bidirectional low voltage translators” (Ref. 2) for more information.
Table 6.
Pull-up resistor values
Calculated for VOL = 0.35 V. Assumes output driver VOL = 0.175 V at stated current.
Pull-up resistor value ()
Voltage
15 mA
Nominal
+ 10 %[1]
310 341
10 mA
Nominal
+ 10 %[1]
465 512
3 mA
Nominal
+ 10 %[1]
1550 1705
5.0 V
3.3 V
2.5 V
1.8 V
1.5 V
1.2 V
1.1 V
1.0 V
0.95 V
0.9 V
0.85 V
0.8 V
197
143
97
77
57
50
44
40
37
34
30
217
158
106
85
295
215
145
115
85
325
237
160
127
94
983
717
483
383
283
250
217
200
183
167
150
1082
788
532
422
312
275
239
220
201
184
165
63
55
75
83
48
65
72
44
60
66
41
55
61
37
50
55
33
45
50
[1] + 10 % to compensate for VDD range and resistor tolerance.
GTL2003
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
7 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
9. Limiting values
Table 7.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Symbol Parameter
Conditions
Min
Max
Unit
V
VSREF
VDREF
VGREF
VSn
voltage on pin SREF
0.5[2] +7.0
0.5[2] +7.0
0.5[2] +7.0
0.5[2] +7.0
0.5[2] +7.0
voltage on pin DREF
voltage on pin GREF
voltage on port Sn
V
V
V
VDn
voltage on port Dn
input clamping current
V
IIK
SREF, DREF, GREF; VI < 0 V
port Sn; VI < 0 V
-
50
mA
mA
mA
mA
C
-
50
port Dn; VI < 0 V
-
50
Ich
channel current (DC)
storage temperature
channel in ON-state
-
128
+150
Tstg
65
[1] The performance capability of a high-performance integrated circuit in conjunction with its thermal
environment can create junction temperatures which are detrimental to reliability. The maximum junction
temperature of this integrated circuit should not exceed 150 C.
[2] The input and output negative voltage ratings may be exceeded if the input and output clamp current
ratings are observed.
10. Recommended operating conditions
Table 8.
Recommended operating conditions
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VI/O
voltage on an input/output
Sn, Dn
0
-
5.5
V
pin
VSn
voltage on port Sn
voltage on pin SREF
voltage on pin DREF
voltage on pin GREF
pass switch current
ambient temperature
Sn
0
-
-
-
-
-
-
5.5
5.5
5.5
5.5
64
V
[1]
VSREF
VDREF
VGREF
Isw(pass)
Tamb
0
V
0
V
0
V
-
mA
C
operating in free-air
40
+85
[1] VSREF VDREF 1.5 V for best results in level shifting applications.
GTL2003
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
8 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
11. Static characteristics
Table 9.
Static characteristics
Tamb = 40 C to +85 C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
VOL
LOW-level output voltage
VDD = 3.0 V; VSREF = 1.365 V;
-
260
350
mV
VSn or VDn = 0.175 V; IIK = 15.2 mA
VIK
input clamping voltage
gate input leakage current
input capacitance at gate
II = 18 mA; VGREF = 0 V
VI = 5 V; VGREF = 0 V
-
-
-
-
-
1.2
V
ILI(G)
Cig
-
5
-
A
pF
pF
GREF; VI = 3 V or 0 V
VO = 3 V or 0 V; VGREF = 0 V
56
7.4
Cio(off)
off-state input/output
capacitance
-
Cio(on)
Ron
on-state input/output
capacitance
VO = 3 V or 0 V; VGREF = 3 V
-
18.6
-
pF
[2]
ON-state resistance
VSn = 0 V; IO = 64 mA
VGREF = 4.5 V
-
-
-
-
-
-
-
-
3.5
4.4
5.5
67
9
5
VGREF = 3 V
7
VGREF = 2.3 V
9
VGREF = 1.5 V
105
15
10
80
70
[2]
[2]
[2]
[2]
VSn = 0 V; IO = 30 mA; VGREF = 1.5 V
VSn = 2.4 V; IO = 15 mA; VGREF = 4.5 V
7
VSn = 2.4 V; IO = 15 mA; VGREF = 3 V
58
50
VSn = 1.7 V; IO = 15 mA; VGREF = 2.3 V
[1] All typical values are measured at Tamb = 25 C.
[2] Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. ON-state resistance is
determined by the lowest voltage of the two (Sn or Dn) terminals.
GTL2003
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
9 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
12. Dynamic characteristics
12.1 Dynamic characteristics for translator-type application
Table 10. Dynamic characteristics
amb = 40 C to +85 C; Vref = 1.365 V to 1.635 V; VDD1 = 3.0 V to 3.6 V; VDD2 = 2.36 V to 2.64 V;
GND = 0 V; tr = tf 3.0 ns; unless otherwise specified. Refer to Figure 9.
T
Symbol
Parameter
Conditions
Min
Typ[1] Max
Unit
[2][3]
[2][3]
tPLH
LOW to HIGH
propagation delay
Sn to Dn; Dn to Sn
0.5
1.5
5.5
ns
tPHL
HIGH to LOW
Sn to Dn; Dn to Sn
0.5
1.5
5.5
ns
propagation delay
[1] All typical values are measured at VDD1 = 3.3 V, VDD2 = 2.5 V, Vref = 1.5 V and Tamb = 25 C.
[2] Propagation delay is measured using Figure 9 and is a difference measurement. It is not production tested
and is guaranteed by ON-state resistance.
[3] Cio(on) maximum of 30 pF and Cio(off) maximum of 15 pF is guaranteed by design.
V
I
input
V
V
M
M
GND
V
V
V
V
DD2
test jig output
HIGH-to-LOW
LOW-to-HIGH
V
V
M
M
OL
t
t
PLH
PHL
DD2
DUT output
HIGH-to-LOW
LOW-to-HIGH
V
M
V
M
OL
002aad197
VM = 1.5 V; VI = GND to 3.0 V.
Fig 7. The input (Sn) to output (Dn) propagation delays
GTL2003
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
10 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
12.2 Dynamic characteristics for CBT-type application
Table 11. Dynamic characteristics
Tamb = 40 C to +85 C; VGREF = 5 V 0.5 V; GND = 0 V; CL = 50 pF; unless otherwise specified.
Refer to Figure 10.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
tPD
propagation delay
-
-
250
ps
[1] This parameter is warranted by the ON-state resistance, but is not production tested. The propagation
delay is based on the RC time constant of the typical ON-state resistance of the switch and a load
capacitance of 50 pF, when driven by an ideal voltage source (zero output impedance).
3.0 V
input
1.5 V
1.5 V
0 V
V
t
t
PHL
PLH
OH
output
1.5 V
1.5 V
V
OL
002aab664
VM = 1.5 V; VI = GND to 3.0 V.
tPD is equal to the maximum of tPLH or tPHL
.
Fig 8. Input (Sn) to output (Dn) propagation delays
GTL2003
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
11 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
13. Test information
V
V
V
V
DD1
DD2
DD2
DD2
150 Ω
200 kΩ
150 Ω
150 Ω
DREF
SREF
GREF
D1
S1
D8
S8
DUT
test jig
V
ref
pulse
generator
002aac643
Fig 9. Load circuit for translator-type applications
R
L
7 V
S1
from output under test
open
GND
500 Ω
C
50 pF
R
L
500 Ω
L
002aab667
Test data are given in Table 12.
CL = load capacitance; includes jig and probe capacitance.
RL = load resistance.
Fig 10. Load circuit for CBT-type application
Table 12. Test data
Test
Load
CL
Switch
RL
tPD
50 pF
50 pF
50 pF
500
500
500
open
7 V
tPLZ, tPZL
tPHZ, tPZH
open
GTL2003
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 July 2012
12 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
14. Package outline
TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm
SOT360-1
D
E
A
X
c
H
v
M
A
y
E
Z
11
20
Q
A
2
(A )
3
A
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
Z
θ
1
2
3
p
E
p
max.
8o
0o
0.15
0.05
0.95
0.80
0.30
0.19
0.2
0.1
6.6
6.4
4.5
4.3
6.6
6.2
0.75
0.50
0.4
0.3
0.5
0.2
mm
1.1
0.65
0.25
1
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-19
SOT360-1
MO-153
Fig 11. Package outline SOT360-1 (TSSOP20)
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Product data sheet
Rev. 2 — 3 July 2012
13 of 24
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NXP Semiconductors
8-bit bidirectional low voltage translator
DHVQFN20: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;
20 terminals; body 2.5 x 4.5 x 0.85 mm
SOT764-1
B
A
D
A
A
1
E
c
detail X
terminal 1
index area
C
terminal 1
index area
e
1
y
y
e
b
v
M
C
C
A
B
C
1
w
M
2
9
L
1
10
E
h
e
20
11
19
12
D
h
X
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
(1)
(1)
UNIT
A
b
c
E
e
e
1
y
D
D
E
L
v
w
y
1
1
h
h
max.
0.05 0.30
0.00 0.18
4.6
4.4
3.15
2.85
2.6
2.4
1.15
0.85
0.5
0.3
mm
0.05
0.1
1
0.2
0.5
3.5
0.1
0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-10-17
03-01-27
SOT764-1
- - -
MO-241
- - -
Fig 12. Package outline SOT764-1 (DHVQFN20)
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Product data sheet
Rev. 2 — 3 July 2012
14 of 24
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8-bit bidirectional low voltage translator
15. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
15.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
15.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus SnPb soldering
15.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
GTL2003
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Product data sheet
Rev. 2 — 3 July 2012
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8-bit bidirectional low voltage translator
15.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 13) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 13 and 14
Table 13. SnPb eutectic process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350
235
350
220
< 2.5
2.5
220
220
Table 14. Lead-free process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 13.
GTL2003
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Product data sheet
Rev. 2 — 3 July 2012
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NXP Semiconductors
8-bit bidirectional low voltage translator
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 13. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
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Rev. 2 — 3 July 2012
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8-bit bidirectional low voltage translator
16. Soldering: PCB footprints
Footprint information for reflow soldering of TSSOP20 package
SOT360-1
Hx
Gx
P2
(0.125)
(0.125)
Hy Gy
By Ay
C
D2 (4x)
P1
D1
Generic footprint pattern
Refer to the package outline drawing for actual layout
solder land
occupied area
DIMENSIONS in mm
P1 P2 Ay
By
C
D1
D2
Gx
Gy
Hx
Hy
0.650 0.750 7.200 4.500 1.350 0.400 0.600 6.900 5.300 7.300 7.450
sot360-1_fr
Fig 14. PCB footprint for SOT360-1 (TSSOP20); reflow soldering
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Product data sheet
Rev. 2 — 3 July 2012
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NXP Semiconductors
8-bit bidirectional low voltage translator
Footprint information for reflow soldering of DHVQFN20 package
SOT764-1
5.750
4.800
0.290
0.500
0.650
0.025
0.025
0.105
3.750 2.800
0.400 0.900 1.700 3.700
1.700
2.900
3.500
5.500
Refer to the package outline drawing for actual layout
solder land
solder paste deposit
solder land plus solder paste
occupied area
Fig 15. PCB footprint for SOT764-1 (TSSOP20); reflow soldering
GTL2003
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Product data sheet
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8-bit bidirectional low voltage translator
17. Abbreviations
Table 15. Abbreviations
Acronym
CDM
Description
Charged Device Model
CMOS
DUT
Complementary Metal Oxide Semiconductor
Device Under Test
ESD
ElectroStatic Discharge
GTL
Gunning Transceiver Logic
HBM
Human Body Model
I2C-bus
LVTTL
NMOS
TTL
Inter-Integrated Circuit bus
Low Voltage Transistor-Transistor Logic
Negative-channel Metal Oxide Semiconductor
Transistor-Transistor Logic
TVC
Transceiver Voltage Clamps
18. References
[1] AN11127, “Bidirectional voltage translators NVT2001/02/03/04/06/08/10,
PCA9306, GTL2000/02/03/10” — application note; NXP Semiconductors;
www.nxp.com/documents/application_note/AN11127.pdf
[2] AN10145, “Bidirectional low voltage translators” — application note;
NXP Semiconductors; www.nxp.com/documents/application_note/AN10145.pdf
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Product data sheet
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8-bit bidirectional low voltage translator
19. Revision history
Table 16. Revision history
Document ID
GTL2003 v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20120703
Product data sheet
-
GTL2003 v.1
• Section 1 “General description”:
–
first paragraph, third sentence changed from “between 1.0 V and 5.0 V” to “between 0.8 V and
5.0 V”
–
–
first paragraph: added (new) fourth sentence.
second paragraph, third sentence: changed from “VCC” to “VDD1
”
• Section 2 “Features and benefits”:
–
second bullet: added “0.8 V, 0.9 V”
–
tenth bullet: deleted phrase “200 V MM per JESD22-A115”
• Section 3 “Applications”:
–
first bullet: changed from “1.0 V” to “0.8 V” (two places)
–
second bullet: added “0.8 V, 0.9 V”
• Table 5 “Function selection, LOW-to-HIGH translation”, Table note [3]: changed from “VCC” to
“VDD1
• Section 8.1 “Bidirectional translation”:
”
–
–
–
–
–
–
first sentence: changed from “VCC” to “VDD1”
third sentence: changed from “VCC” to “VDD1
”
seventh sentence re-written
eighth sentence re-written
added (new) ninth sentence
Figure 4 “Bidirectional translation to multiple higher voltage levels such as an I2C-bus
application” updated
• Section 8.2 “Unidirectional down translation”:
–
–
–
–
first sentence: changed from “VCC” to “VDD1”
fifth sentence re-written (split into fifth and sixth sentences)
added (new) seventh sentence
Figure 5 “Unidirectional down translation to protect low voltage processor pins” updated
• Figure 6 “Unidirectional down translation to protect low voltage processor pins” updated
• Section 8.4 “Sizing pull-up resistor”:
–
–
–
added (new) second paragraph
third paragraph, first sentence: appended “for VDD1 VSREF 1.5 V”
Table 6 “Pull-up resistor values”: added six rows, 1.1 V through 0.8 V
• Table 8 “Recommended operating conditions”: added row VSn
• Table 9 “Static characteristics”:
–
Conditions for Ron: changed from “VI” to “VSn”
• Figure 9 “Load circuit for translator-type applications”: corrected resistors’ values from “150 k” to
“150 ” (3 places)
• Added Section 16 “Soldering: PCB footprints”
• Added Section 18 “References”
GTL2003_1
20070727
Product data sheet
-
-
GTL2003
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Product data sheet
Rev. 2 — 3 July 2012
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8-bit bidirectional low voltage translator
20. Legal information
20.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
20.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
20.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
GTL2003
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Product data sheet
Rev. 2 — 3 July 2012
22 of 24
GTL2003
NXP Semiconductors
8-bit bidirectional low voltage translator
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
20.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
21. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
GTL2003
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Product data sheet
Rev. 2 — 3 July 2012
23 of 24
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NXP Semiconductors
8-bit bidirectional low voltage translator
22. Contents
1
General description. . . . . . . . . . . . . . . . . . . . . . 1
2
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
3
4
4.1
5
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Functional description . . . . . . . . . . . . . . . . . . . 4
7.1
Function selection. . . . . . . . . . . . . . . . . . . . . . . 4
8
Application design-in information . . . . . . . . . . 5
Bidirectional translation . . . . . . . . . . . . . . . . . . 5
Unidirectional down translation. . . . . . . . . . . . . 6
Unidirectional up translation . . . . . . . . . . . . . . . 6
Sizing pull-up resistor . . . . . . . . . . . . . . . . . . . . 7
8.1
8.2
8.3
8.4
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Recommended operating conditions. . . . . . . . 8
Static characteristics. . . . . . . . . . . . . . . . . . . . . 9
10
11
12
12.1
Dynamic characteristics . . . . . . . . . . . . . . . . . 10
Dynamic characteristics for translator-type
application . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Dynamic characteristics for CBT-type
12.2
application . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13
14
Test information. . . . . . . . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
15
Soldering of SMD packages . . . . . . . . . . . . . . 15
Introduction to soldering . . . . . . . . . . . . . . . . . 15
Wave and reflow soldering . . . . . . . . . . . . . . . 15
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 15
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 16
15.1
15.2
15.3
15.4
16
17
18
19
Soldering: PCB footprints. . . . . . . . . . . . . . . . 18
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 20
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 21
20
Legal information. . . . . . . . . . . . . . . . . . . . . . . 22
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
20.1
20.2
20.3
20.4
21
22
Contact information. . . . . . . . . . . . . . . . . . . . . 23
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 July 2012
Document identifier: GTL2003
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