BUK9240-100A [NXP]
TrenchMOS logic level FET; 的TrenchMOS逻辑电平FET
| 型号： | BUK9240-100A |
| 厂家： | 
NXP |
| 描述： | TrenchMOS logic level FET |
| 文件： | 总13页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK9240-100A
TrenchMOS™ logic level FET
Rev. 01 — 03 October 2000
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK9240-100A in SOT428 (D-PAK).
2. Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Logic level compatible.
3. Applications
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
c
c
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
d
s
2
drain (d)
3
source (s)
g
mb
mounting base;
connected to
drain (d)
2
1
3
MBB076
Top view
MBK091
SOT428 (D-PAK)
1. TrenchMOS is a trademark of Royal Philips Electronics.
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
100
33
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
−
A
Ptot
Tj
total power dissipation
junction temperature
−
114
175
40
W
−
°C
RDSon
drain-source on-state resistance
VGS = 5 V; ID = 25 A
VGS = 4.5 V; ID = 25 A
34
−
mΩ
mΩ
44.6
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
RGS = 20 kΩ
tp ≤ 50 µs
Min
−
Max
100
100
±10
±15
33
Unit
V
VDS
VDGR
VGS
VGSM
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
non-repetitive gate-source voltage
drain current (DC)
−
V
−
V
−
V
Tmb = 25 °C; VGS = 5 V;
−
A
Figure 2 and 3
T
mb = 100 °C; VGS = 5 V; Figure 2
−
−
23.8
135
A
A
[1]
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tmb = 25 °C; Figure 1
−
114
W
−55
−55
+175
+175
°C
°C
operating junction temperature
Source-drain diode
IDR
reverse drain current (DC)
pulsed reverse drain current
Tmb = 25 °C
−
−
33
A
A
IDRM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
135
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID = 25 A;
−
31
mJ
VDS ≤ 100 V; VGS = 5 V; RGS = 50 Ω;
starting Tj = 25 °C
[1] IDM is limited by chip, not package.
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
2 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
03aa24
03aa16
120
120
I
P
der
(%)
der
(%)
100
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75 100 125 150 175 200
o
0
25
50
75 100 125 150 175 200
o
T
( C)
T
( C)
mb
mb
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
1000
I
D
(A)
R
= V
/ I
DS D
DSon
100
10
1
t
= 10 us
p
100 us
1 ms
t
p
P
δ =
T
D.C.
t
t
10 ms
p
T
100 ms
1
10
100
1000
V
(V)
DS
Tamb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
3 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Rth(j-a)
Parameter
Conditions
Value
71.4
1.3
Unit
K/W
K/W
thermal resistance from junction to ambient
Figure 4
Rth(j-mb)
thermal resistance from junction to mounting
base
7.1 Transient thermal impedance
03na70
10
Z
th(j-mb)
(K/W)
1
0.1
0.01
t
p
P
δ =
T
t
t
p
T
0.001
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of
pulse duration.
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
4 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
100
89
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
Tj = 25 °C
;
1
1.5
−
2
V
V
V
Tj = 175 °C
Tj = −55 °C
0.5
−
−
−
2.3
IDSS
drain-source leakage current VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
−
−
−
0.05
−
10
µA
µA
nA
500
100
IGSS
gate-source leakage current VGS = ±10 V; VDS = 0 V
2
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Figure 7 and 8
Tj = 25 °C
−
−
−
34
−
40
mΩ
mΩ
mΩ
Tj = 175 °C
100
44.6
VGS = 4.5 V; ID = 25 A;
−
Tj = 25 °C
VGS = 10 V; ID =25 A;
−
33
38.6
mΩ
Tj =25°C
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
−
−
−
−
−
−
−
−
2304
222
151
20
3072
pF
pF
pF
ns
ns
ns
ns
nH
266.4
207
−
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
135
125
90
−
td(off
tf
)
turn-off delay time
fall time
−
−
Ld
internal drain inductance
measured from drain lead
from package to centre of
die
2.5
−
Ls
internal source inductance
measured from source lead
from package to source
bond pad
−
7.5
−
nH
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
5 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A;VGS = 0 V;
−
0.85
1.2
V
voltage
Figure 15
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
−
−
60
−
−
ns
Qr
240
nC
03na64
38
DSon
03na66
120
(A)
R
3.8
5.0
4.0
(mOhm)
I
D
36
100
80
60
40
20
0
V
= 10 (V)
GS
3.6
3.4
34
32
30
28
26
3.2
3.0
2.8
2.6
2.4
3
4
5
6
7
8
9
V
10
(V)
0
2
4
6
8
10
V
(V)
DS
GS
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. On-state resistance: typical values.
03aa29
03na67
3
2.8
2.6
2.4
2.2
2
50
DSon
(mOhm)
a
R
V
= 3.0 (V)
GS
45
3.2
3.4
40
35
30
25
20
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
3.6
4.0
5.0
-60
-20
20
60
100
140
180
10
20
30
40
50
60
70
o
T ( C)
I
(A)
D
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
6 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
03aa36
-1
03aa33
10
2.5
V
GS(th)
I
D
(V)
max
typ
-2
-3
-4
(A)
10
10
10
2
min
typ
max
1.5
1
min
-5
10
10
0.5
0
-6
0
0.5
1
1.5
2
2.5
(V)
3
-60
-20
20
60
100
140
180
o
T ( C)
V
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03na68
03na65
6000
70
g
fs
(S)
60
C (pF)
5000
50
40
30
20
10
0
4000
3000
Ciss
2000
1000
Coss
Crss
0
0.01
0.1
1
10
100
0
10
20
30
40
(A)
V
(V)
I
DS
D
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
7 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
03na61
03na63
80
6
I
D
V
(V)
(A)
70
GS
5
4
3
2
1
0
o
T = 25 C
j
V
= 14(V)
60
50
40
30
20
10
0
DS
o
T = 175 C
j
V
= 80(V)
DS
0
1
2
3
4
5
(V)
0
20
40
60
Q
(nC)
V
G
GS
VDS = 25 V
Tj = 25 °C; ID = 25 A
Fig 13. Transfer characteristics; typical values.
Fig 14. Turn-on gate charge characteristics; typical
values.
03na62
120
IS
(A)
100
80
60
40
20
0
o
T = 175 C
j
o
= 25 C
T
j
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(V)
V
SD
VGS = 0 V
Fig 15. Reverse diode current; typical values.
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
8 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
A
E
A
2
A
b
D
1
1
2
mounting
base
E
1
D
H
E
L
2
2
L
1
L
1
3
b
b
w
M
A
c
1
e
e
1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
b
E
H
E
max.
D
L
1
min.
A
max.
E
max.
y
D
max.
1
1
(1)
1
A
A
b
2
UNIT
mm
b
c
e
e
1
L
L
w
2
1
2
max.
max.
min.
max.
0.65 0.89
0.45 0.71
0.7
0.5
2.38
2.22
0.89 1.1
0.71 0.9
5.36
5.26
0.4 6.22
0.2 5.98
6.73
6.47
10.4 2.95
9.6
2.55
4.81
4.45
4.57
0.2
0.2
4.0 2.285
0.5
Note
1. Measured from heatsink back to lead.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
98-04-07
99-09-13
SOT428
TO-252
SC-63
Fig 16. SOT428 (D-PAK).
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
9 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
01 20001003
Product specification; initial version.
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
10 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07573
© Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 — 03 October 2000
11 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
Philips Semiconductors - a worldwide company
Argentina: see South America
Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399
New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811
Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474
Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Tel. +43 160 101, Fax. +43 160 101 1210
Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102
Canada: Tel. +1 800 234 7381
Romania: see Italy
Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700
Colombia: see South America
Czech Republic: see Austria
Slovenia: see Italy
Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044
Finland: Tel. +358 961 5800, Fax. +358 96 158 0920
France: Tel. +33 14 099 6161, Fax. +33 14 099 6427
Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300
Hungary: see Austria
South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107
Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745
Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730
Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874
Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447
Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: Tel. +1 800 234 7381
India: Tel. +91 22 493 8541, Fax. +91 22 493 8722
Indonesia: see Singapore
Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200
Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007
Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057
Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415
Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880
Mexico: Tel. +9-5 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA70)
9397 750 07573
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 03 October 2000
12 of 13
BUK9240-100A
TrenchMOS™ logic level FET
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 03 October 2000
Document order number: 9397 750 07573
相关型号：
©2020 ICPDF网 联系我们和版权申明