BUK9505-30A [NXP]
TrenchMOS transistor Logic level FET; 的TrenchMOS晶体管逻辑电平场效应管型号: | BUK9505-30A |
厂家: | NXP |
描述: | TrenchMOS transistor Logic level FET |
文件: | 总8页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9505-30A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology which features very low
on-state resistance. It is intended for
use in automotive and general
purpose switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
Ptot
Tj
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
30
75
230
175
V
A
W
˚C
RDS(ON)
resistance
VGS = 5 V
VGS = 10 V
5
4.6
mΩ
mΩ
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
tab
gate
2
drain
g
3
source
tab drain
s
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage tp≤50µS
-
-
-
-
-
30
30
10
15
V
V
V
V
VDGR
±VGS
±VGSM
RGS = 20 kΩ
-
ID
ID
IDM
Ptot
Tstg, Tj
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
Tmb = 25 ˚C
-
-
-
-
75
75
400
230
175
A
A
A
W
˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
- 55
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
-
-
0.65
K/W
in free air
60
-
K/W
August 1999
1
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9505-30A
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
VGS(TO)
Drain-source breakdown
voltage
Gate threshold voltage
VGS = 0 V; ID = 0.25 mA;
30
27
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
mΩ
mΩ
Tj = -55˚C
VDS = VGS; ID = 1 mA
1.5
-
-
0.05
-
2
4.3
-
3.9
-
2.0
-
2.3
10
500
100
5
9.3
4.6
5.4
Tj = 175˚C
Tj = -55˚C
IDSS
Zero gate voltage drain current VDS = 30 V; VGS = 0 V;
Tj = 175˚C
Tj = 175˚C
IGSS
RDS(ON)
Gate source leakage current
Drain-source on-state
resistance
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 25 A
VGS = 10 V; ID = 25 A
VGS = 4.5 V; ID = 25 A
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
6500 8600
1500 1800
1000 1350
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; Rload =1.2Ω;
VGS = 5 V; RG = 10 Ω
-
-
-
-
45
65
ns
ns
ns
ns
220
435
320
330
600
450
Ld
Ld
Ls
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
-
-
3.5
4.5
7.5
-
-
-
nH
nH
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IDR
Continuous reverse drain
current
-
-
75
A
IDRM
VSD
Pulsed reverse drain current
Diode forward voltage
-
-
-
-
240
1.2
-
A
V
V
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
0.85
1.1
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 75 A; -dIF/dt = 100 A/µs;
VGS = -10 V; VR = 30 V
-
-
400
1.0
-
-
ns
µC
August 1999
2
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9505-30A
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 75 A; VDD ≤ 25 V;
-
-
500
mJ
VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
Normalised Power Derating
PD%
1000
120
ID/A
110
100
90
80
70
60
50
40
30
20
10
0
tp =
RDS(ON) = VDS/ID
100uS
100
1mS
10mS
DC
10
100mS
0
20
40
60
80
Tmb /
100 120 140 160 180
C
1
1
10
100
VDS/V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Tmb)
Zth / (K/W)
Normalised Current Derating
ID%
1
120
110
100
90
80
70
60
50
40
30
20
10
0
D =
0.5
0.2
0.1
0.1
0.05
t
p
0.02
0
p
t
P
D
D =
T
0.01
t
T
0
20
40
60
80
100 120 140 160 180
0.001
0.00001
0.001
0.1
10
Tmb /
C
t/S
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
August 1999
3
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9505-30A
400
100
ID/A
4.8
4.6
4.4
10.0
7.0
6.0
5.0
VGS/V =
ID/V
4.2
80
60
40
20
0
300
4.0
3.8
3.6
3.4
200
100
0
25
175
Tj/C =
3.2
3.0
2.8
2.6
2.4
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
VDS/V
VGS/V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.8. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
RDS(ON)/mOhm
11
150
gfs/S
10
9
VGS/V =
8
100
50
0
7
3.0
3.2
6
3.4
3.6
4.0
5.0
5
4
3
0
20
40
60
80
100
0
20
40
60
80
100
ID/A
ID/A
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Fig.9. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
RDS(ON)/mOhm
6.5
a
2
6
5.5
5
1.5
1
4.5
4
0.5
3.5
3
0
-100
0
100
200
-50
50
Tj / C
150
3
4
5
6
7
8
9
10
VGS/V
Fig.7. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(VGS); conditions: ID = 25 A;
Fig.10. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
August 1999
4
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9505-30A
6
VGS/V
5
VGS(TO) / V
2.5
max.
2
4
3
2
1
0
typ.
1.5
24V
14V
VDS =
min.
1
0.5
0
-100
-50
0
50
Tj / C
100
150
200
0
20
40
60
80
100
120
QG/nC
Fig.11. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.14. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS
100
Sub-Threshold Conduction
1E-01
ID/A
80
1E-02
1E-03
1E-04
1E-05
1E-05
60
40
20
0
2%
typ
98%
25
175
Tj/C =
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSDS/V
1
1.1
0
0.5
1
1.5
2
2.5
3
Fig.12. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Fig.15. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
20
15
10
5
110
100
90
80
70
60
50
40
30
20
10
0
ThouandspF
Ciss
Coss
Crss
20
40
60
80
100
120
140
160
180
0
0.01
0.1
1
10
100
Tmb /
C
VDS/V
Fig.13. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.16. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
August 1999
5
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9505-30A
VDD
VDD
+
+
-
RD
VDS
L
VDS
-
VGS
0
VGS
0
-ID/100
RG
T.U.T.
T.U.T.
R 01
shunt
RGS
Fig.17. Avalanche energy test circuit.
WDSS = 0.5 LID2 BVDSS/(BVDSS − VDD
Fig.18. Switching test circuit.
)
August 1999
6
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9505-30A
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
August 1999
7
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9505-30A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1999
8
Rev 1.100
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