BUK9506-55B [NXP]
N-channel TrenchMOS FET; N沟道FET的TrenchMOS型号: | BUK9506-55B |
厂家: | NXP |
描述: | N-channel TrenchMOS FET |
文件: | 总13页 (文件大小:188K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK9506-55B
N-channel TrenchMOS FET
Rev. 04 — 23 July 2009
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology. This product has been designed and qualified to the appropriate
AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
Suitable for logic level gate drive
on-state resistance
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
55
75
V
A
[1]
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1 and 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
-
258
679
W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
ID = 75 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
mJ
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 14 and 15
-
22
-
nC
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
Table 1.
Quick reference …continued
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max Unit
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
and 12
-
4.8
5.4
6
mΩ
mΩ
VGS = 5 V; ID = 25 A;
-
5.1
Tj = 25 °C; see Figure 11
and 12
[1] Continuous current is limited by package.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
S
1
2 3
SOT78
(TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK9506-55B
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
2 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
55
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
VDGR
VGS
-
55
V
-15
15
V
[1]
[2]
[2]
ID
Tmb = 25 °C; VGS = 5 V; see Figure 1 and 3
-
146
75
A
-
A
Tmb = 100 °C; VGS = 5 V; see Figure 1
-
75
A
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
-
587
258
175
175
A
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
-55
-55
junction temperature
Source-drain diode
[1]
[2]
IS
source current
Tmb = 25 °C;
-
-
-
146
75
A
A
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V;
587
Avalanche ruggedness
EDS(AL)S non-repetitive
-
679
mJ
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
03aa16
03nh85
120
150
ID
P
der
(A)
(%)
80
100
50
0
Capped at 75 A due to package
40
0
0
50
100
150
200
0
50
100
150
200
Tmb ( C)
T
mb
(°C)
°
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
3 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
03nh83
103
tp = 10
s
s
μ
μ
Limit RDSon = VDS / ID
ID
(A)
102
100
Capped at 75 A due to package
1 ms
DC
10
10 ms
100 ms
1
10-1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
4 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction see Figure 4
to mounting base
-
-
0.58
K/W
Rth(j-a)
thermal resistance from junction
to ambient
-
60
-
K/W
03nh84
1
δ = 0.5
Zth(j-mb)
(K/W)
0.2
10-1
10-2
10-3
0.1
0.05
0.02
tp
P
δ =
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
5 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
50
55
-
-
-
-
-
V
V
V
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
2.3
voltage
see Figure 9 and 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9 and 10
1.1
0.5
1.5
-
2
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9 and 10
IDSS
drain leakage current
gate leakage current
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VDS = 0 V; VGS = 15 V; Tj = 25 °C
VDS = 0 V; VGS = -15 V; Tj = 25 °C
-
-
-
-
-
0.02
1
µA
µA
nA
nA
mΩ
-
500
100
100
6.4
IGSS
2
2
-
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
-
-
-
4.8
-
5.4
12
6
mΩ
mΩ
mΩ
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 11 and 12
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
5.1
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
gate-drain charge
ID = 25 A; VDS = 44 V; VGS = 5 V;
Tj = 25 °C; see Figure 14 and 15
-
-
-
-
60
11
-
-
-
-
nC
nC
nC
V
QGD
22
2.4
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 44 V; Tj = 25 °C;
see Figure 14 and 15
Ciss
Coss
Crss
input capacitance
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
-
-
5674
755
7565
906
pF
pF
pF
reverse transfer
capacitance
255
350
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
-
37
-
-
-
-
-
ns
ns
ns
ns
nH
95
turn-off delay time
fall time
117
106
4.5
LD
internal drain
inductance
from drain lead 6 mm from package to
center of die; Tj = 25 °C
from contact screw on mounting base to
center of die; Tj = 25 °C
-
-
3.5
7.5
-
-
nH
nH
LS
internal source
inductance
from source lead to source bonding pad;
Tj = 25 °C
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
6 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
Table 6.
Symbol
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
-
0.85
1.2
V
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
-
-
64
79
-
-
ns
Qr
nC
03nj65
03nj66
350
14
ID
(A)
300
10
4.2
4
RDSon
3.2
VGS (V) is
VGS (V) is
3
(mΩ)
12
6
5
3.4
3.8
3.6
3.4
3.2
4
250
200
150
100
50
10
8
5
10
6
3
2.8
4
2.6
2.4
2
0
0
100
200
300
400
0
2
4
6
8
10
ID (A)
VDS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
03nj63
03nj62
200
100
ID
gfs
(S)
(A)
150
100
50
75
50
25
T = 175
j
C
°
T = 25
j
C
°
0
0
0
20
40
60
80
0
1
2
3
VGS (V)
I
D (A)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
7 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
03ng52
03ng53
−1
−2
−3
−4
−5
−6
2.5
10
I
V
D
GS(th)
(V)
(A)
2.0
10
10
10
10
10
max
min
typ
max
1.5
1.0
0.5
0
typ
min
−60
0
60
120
180
0
1
2
3
T (°C)
V
GS
(V)
j
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03ne89
03nj64
7
2
a
RDSon
(mΩ)
1.5
6
5
4
1
0.5
0
3
7
11
15
-60
0
60
120
180
V
GS (V)
T ( C)
°
j
Fig 11. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
8 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
03nj60
03nj61
100
5
4
3
2
1
0
VGS
(V)
IS
(A)
75
50
VDD = 14 V
VDD = 44 V
T = 175
C
°
j
25
T = 25
C
°
j
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
0
20
40
60
Q
G (nC)
Fig 13. Source current as a function of source-drain
voltage; typical values
Fig 14. Gate-source voltage as a function of gate
charge; typical values
03nj67
8000
V
DS
C
(pF)
Ciss
I
D
6000
V
GS(pl)
V
GS(th)
4000
2000
0
Coss
V
GS
Q
Q
GS1
GS2
Q
Q
GD
GS
Crss
Q
G(tot)
003aaa508
Fig 15. Gate charge waveform definitions
10-1
1
10
102
VDS (V)
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
9 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 17. Package outline SOT78 (TO-220AB)
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
10 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
8. Revision history
Table 7.
Revision history
Document ID
BUK9506-55B_4
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090723
Product data sheet
-
BUK95_96_9E06_55B_3
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK9506-55B separated from data sheet BUK95_96_9E06_55B_3.
BUK95_96_9E06_55B_3 20041130
(9397 750 13519)
Product data sheet
-
-
-
BUK95_96_9E06_55B-02
BUK95_96_9E06_55B-02 20021010
(9397 750 10474)
Product data
BUK95_96_9E06_55B-01
-
BUK95_96_9E06_55B-01 20020813
(9397 750 09946)
Product data
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
11 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK9506-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 23 July 2009
12 of 13
BUK9506-55B
NXP Semiconductors
N-channel TrenchMOS FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 July 2009
Document identifier: BUK9506-55B_4
相关型号:
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