BLY89C [NXP]
VHF power transistor; 甚高频功率晶体管
| 型号： | BLY89C |
| 厂家： | 
NXP |
| 描述： | VHF power transistor |
| 文件： | 总11页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLY89C
VHF power transistor
August 1986
Product specification
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V. It has a
3/8" capstan envelope with a ceramic
cap. All leads are isolated from the
stud.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCC
V
f
PL
W
Gp
dB
η
%
zi
Ω
YL
mS
MHz
c.w.
13,5
175
25
>6
>70
1,6 + j1,4 210 + j5,5
PIN CONFIGURATION
PINNING - SOT120
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
halfpage
4
c
1
3
emitter
handbook, halfpage
b
e
MBB012
2
MSB056
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
VCEO
VEBO
IC(AV)
ICM
max
max
max
max
max
max
36 V
18 V
4 V
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
6 A
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
12 A
73 W
Prf
MGP865
MGP864
80
10
handbook, halfpage
handbook, halfpage
ΙΙΙ
P
rf
I
C
(W)
(A)
derate by
0.38 W/K
60
T
= 70 °C
T
= 25 °C
mb
h
ΙΙ
derate by
0.29 W/K
40
Ι
20
0
1
1
2
50
100
10
10
T
(°C)
V
(V)
h
CE
I
Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. soar.
Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation 20 W; Tmb = 79 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
Rth j-mb(dc)
Rth j-mb(rf)
Rth mb-h
=
=
=
3,1 K/W
2,3 K/W
0,45 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
CHARACTERISTICS
Tj = 25 °C
Breakdown voltage
Collector-emitter voltage
VBE = 0; IC = 25 mA
V(BR)CES
V(BR)CEO
V(BR)EBO
>
>
>
36 V
18 V
4 V
Collector-emitter voltage
open base; IC = 50 mA
Emitter-base voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 18 V
Transient energy
ICES
<
10 mA
L = 25 mH; f = 50 Hz
open base
E
E
>
>
8 ms
8 ms
−VBE = 1,5 V; RBE = 33 Ω
D.C. current gain(1)
typ
50
IC = 2,5 A; VCE = 5 V
hFE
10 to 80
Collector-emitter saturation voltage(1)
IC = 7,5 A; IB = 1,5 A
VCEsat
typ
1,7 V
Transition frequency at f = 100 MHz(1)
IC = 2,5 A; VCE = 13,5 V
IC = 7,5 A; VCE = 13,5 V
fT
fT
typ
typ
800 MHz
750 MHz
Collector capacitance at f = 1 MHz
typ
65 pF
90 pF
IE = Ie = 0; VCB = 15 V
Cc
<
Feedback capacitance at f = 1 MHz
IC = 100 mA; VCE = 15 V
Cre
Ccs
typ
typ
41 pF
2 pF
Collector-stud capacitance
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
MGP866
MGP867
75
200
handbook, halfpage
handbook, halfpage
typical values T = 25 °C
I
= I = 0
e
j
E
f = 1 MHz
h
V
= 13.5 V
5 V
FE
CE
C
c
(pF)
50
100
typ
25
0
0
0
0
5
10
15
10
20
I
(A)
V
(V)
CB
C
Fig.4
Fig.5
MGP868
1000
V
= 13.5 V
CE
f = 100 MHz
T = 25 °C
j
typ
f
T
(MHz)
500
0
0
5
10
15
I
(A)
C
Fig.6
5
August 1986
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
Th = 25 °C
f (MHz)
VCC (V)
PL(W)
PS(W)
Gp (dB)
IC (A)
η (%)
zi (Ω)
YL (mS)
175
175
13,5
12,5
25
25
< 6,25
>
6
< 2,64
>
70
1,6 + j1,4
210 + j5,5
−
typ 6,6
−
typ 75
−
−
C6a
C7
L5
L7
C3a
L4
50 Ω
C1
L1
C2
T.U.T.
C6b
50 Ω
C8
L6
C3b
L2
C4
C5
L8
R2
R1
L3
MGP604
+V
CC
Fig.7 Test circuit for 175 MHz.
List of components:
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor
C5 = 100 nF polyester capacitor
C6a = C6b = 8,2 pF ceramic capacitor (500 V)
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 1 turn enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube choke coil (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10 Ω (±10%) carbon resistor
R2 = 4,7 Ω (±5%) carbon resistor
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
150
72
L3
L8
+V
CC
C4
R1
L2
C5
R2
C3a
L4
L6
C6a
L1
C1
C2
C7
L5
C8
L7
C6b
C3b
rivet
MGP808
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
MGP870
MGP869
15
150
50
handbook, halfpage
f = 175 MHz
= 25 °C
typical values
handbook, halfpage
f = 175 MHz
V
V
= 13.5 V
= 12.5 V
V
= 13.5 V
= 12.5 V
CC
CC
CC
V
T
h
typical values
CC
G
p
(dB)
η
(%)
P
L
(W)
T
T
= 25 °C
= 70 °C
h
h
10
100
50
0
G
p
25
η
5
0
0
0
20
40
0
5
10
15
P
(W)
P (W)
L
S
Fig.9
Fig.10
Conditions for R.F. SOAR
f = 175 MHz
Th = 70 °C
Rth mb-h = 0,45 K/W
VCCnom = 13,5 V
PS = PSnom at VCCnom = 13,5 V and VSWR = 1
MGP871
40
handbook, halfpage
P
Lnom
(W)
VSWR = 1
The transistor has been developed for use with
VSWR =
10
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
30
20
10
50
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply over-voltage
ratio.
P
S
P
Snom
0
1
1.1
1.2
V
1.3
CC
V
CCnom
Fig.11 R.F. soar.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
OPERATING NOTE
Below 50 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
MGP872
20
handbook, halfpage
power gain versus frequency
(class-B operation)
G
p
(dB)
15
10
5
0
0
100
200
300
f (MHz)
VCC = 13,5 V
PL = 25 W
Th = 25 °C
typical values
Fig.12
MGP873
MGP874
500
C
10
5
handbook, halfp
handbook, halfp
load impedance (parallel components)
versus frequency (class-B operation)
input impedance (series components)
R
versus frequency (class-B operation)
L
L
(Ω)
(pF)
r , x
r
i
i
i
250
7.5
x
r
i
(Ω)
R
L
i
C
L
0
5
2.5
0
0
R
L
x
C
L
i
−250
−500
300
−5
0
100
200
0
100
200
300
f (MHz)
f (MHz)
VCC = 13,5 V
PL = 25 W
Th = 25 °C
VCC = 13,5 V
PL = 25 W
Th = 25 °C
typical values
typical values
Fig.13
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT120A
D
A
Q
c
A
D
1
N
1
w
M
M
A
W
D
1
N
2
N
3
M
1
X
H
detail X
b
4
L
3
H
1
2
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
D
H
L
M
M
N
N
N
3
Q
W
w
1
UNIT
mm
1
2
1
1
5.90
5.48
8.39
8.12
5.97
4.74
9.73
9.47
9.66 27.44 9.00
9.39 25.78 8.00
3.41
2.92
1.66 12.83 1.60
1.39 11.17 0.00
3.31
2.54
4.35
3.98
0.18
0.14
0.38
8-32
UNC
1.080
1.015
0.232
0.216
0.330
0.320
0.283
0.248
0.383
0.373
0.380
0.370
0.354 0.134
0.315 0.115
0.505
0.440
0.130 0.171
0.100 0.157
0.007
0.004
0.065
0.055
0.063
0.000
inches
0.015
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-06-28
SOT120A
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11
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