BFS17W [NXP]
NPN 1 GHz wideband transistor; NPN 1 GHz宽带晶体管
| 型号： | BFS17W |
| 厂家： | 
NXP |
| 描述： | NPN 1 GHz wideband transistor |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17W
NPN 1 GHz wideband transistor
1995 Sep 04
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
APPLICATIONS
PINNING
PIN
3
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
1
2
3
base
emitter
collector
DESCRIPTION
1
2
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
MBC870
Top view
Marking code: E1
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
25
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
−
−
−
−
−
−
−
−
V
15
50
300
−
V
mA
mW
Ptot
hFE
fT
up to Ts = 118 °C; note 1
IC = 2 mA; VCE = 1 V
25
−
90
transition frequency
collector capacitance
feedback capacitance
junction temperature
IC = 25 mA; VCE = 5 V
1.6
0.8
0.75
−
−
GHz
pF
Cc
IE = 0; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 5 V; f = 1 MHz
−
1.5
−
Cre
Tj
−
pF
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
MAX.
UNIT
open emitter
open base
−
25
V
−
15
V
open collector
−
2.5
50
V
−
mA
mW
°C
°C
Ptot
Ts = 118 °C; note 1
−
300
+150
175
Tstg
−65
−
Tj
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts = 118 °C; note 1
190
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
ICBO
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = 10 V
−
−
10
−
nA
hFE
IC = 2 mA; VCE = 1 V
25
90
fT
transition frequency
IC = 25 mA; VCE = 5 V;
f = 500 MHz
−
1.6
−
GHz
pF
Cc
Ce
Cre
F
collector capacitance
emitter capacitance
feedback capacitance
noise figure
IE = ie = 0; VCB = 10 V;
f = 1 MHz
−
−
−
−
0.8
2
1.5
−
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
pF
IB = ib = 0; VCE = 5 V;
f = 1 MHz; Tamb = 25 °C
0.75
4.5
−
pF
IC = 2 mA; VCE = 5 V;
−
dB
f = 500 MHz; ΓS = Γopt
MBG237
MLB587
400
60
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h
FE
300
40
20
0
200
100
0
−1
2
10
1
10
10
I
(mA)
0
50
100
150
200
o
( C)
C
T
s
VCE = 1 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
1995 Sep 04
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
MBG238
MBG239
2.5
2
handbook, halfpage
handbook, halfpage
C
re
f
T
(pF)
(GHz)
1.5
2
V
= 10 V
CE
1
0.5
0
5 V
1.5
1
1
2
10
10
0
2
4
6
8
10
(V)
I
(mA)
C
V
CB
IB = ib = 0; f = 1 MHz.
Tamb = 25 °C; f = 500 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function
of collector current; typical values.
MBG240
20
handbook, halfpage
F
(dB)
15
10
5
0
−3
−2
−1
2
3
10
10
10
1
10
10
10
f (MHz)
VCE = 10 V.
Fig.6 Minimum noise figure as function of
frequency; typical values.
1995 Sep 04
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
PACKAGE OUTLINE
1.00
max
0.1
max
0.4
0.2
0.2
A
0.2
B
M
M
0.2
A
3
2.2
2.0
1.35
1.15
1
2
0.3
0.1
1.4
1.2
0.25
0.10
2.2
1.8
B
MBC871
Dimensions in mm.
Fig.7 SOT323.
1995 Sep 04
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 04
6
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