BFS17_15 [JMNIC]
NPN 1 GHz wideband transistor;
| 型号： | BFS17_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | NPN 1 GHz wideband transistor |
| 文件： | 总6页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17
NPN 1 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
DESCRIPTION
NPN transistor in a plastic SOT23 package.
handbook, halfpage
3
APPLICATIONS
• A wide range of RF applications such as:
– Mixers and oscillators in TV tuners
– RF communications equipment.
1
2
Top view
MSB003
PINNING
PIN
DESCRIPTION
Marking code: E1p.
1
2
3
base
emitter
collector
Fig.1 SOT23.
QUICK REFERENCED DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
25
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
noise figure
open emitter
open base
−
V
−
15
25
300
−
V
−
mA
mW
GHz
dB
Ptot
fT
up to Ts = 70 °C; note 1
−
IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 °C
1
F
IC = 2 mA; VCE = 5 V; RS = 50 Ω; f = 500 MHz;
Tj = 25 °C
4.5
−
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
−
25
V
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
open base
−
15
V
open collector
−
2.5
25
V
−
mA
mA
mW
°C
°C
ICM
−
50
Ptot
Tstg
Tj
up to Ts = 70 °C; note 1
−
300
+150
150
−65
−
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the soldering point of the collector pin.
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
260
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts = 70 °C; note 1
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
hFE
IE = 0; VCB = 10 V
−
−
10
−
nA
IC = 2 mA; VCE = 1 V
25
25
−
90
90
1
IC = 25 mA; VCE = 1 V
−
fT
transition frequency
IC = 2 mA; VCE = 5 V; f = 500 MHz
IC = 25 mA; VCE = 5 V; f = 500 MHz
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 1 mA; VCE = 5 V; f = 1 MHz
−
GHz
GHz
pF
−
1.6
0.8
−
−
Cc
Ce
Cre
F
collector capacitance
emitter capacitance
feedback capacitance
noise figure
−
1.5
2
−
pF
−
0.65
4.5
−
pF
IC = 2 mA; VCE = 5 V; RS = 50 Ω;
−
−
dB
f = 500 MHz
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
MEA395
MEA396
100
2.0
handbook, halfpage
handbook, halfpage
C
c
(pF)
1.6
h
FE
1.2
0.8
0.4
50
0
0
0
0
10
20
30
10
20
30
I
(mA)
V
(V)
CB
C
VCE = 1 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.2 DC current gain as a function of
collector current.
Fig.3 Collector capacitance as a function of
collector-base voltage.
MEA397
MEA393
2
10
handbook, halfpage
handbook, halfpage
f
T
F
(GHz)
(dB)
1
5
0
0
0
10
20
30
0
4
8
12
16
20
(mA)
I
(mA)
C
I
C
VCE = 5 V; f = 500 MHz; Tj = 25 °C.
VCE = 5 V; RS = 50 Ω; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
Fig.5 Minimum noise figure as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
September 1995
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
6
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