BFS17WH6327XTSA1 [INFINEON]
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3;
| 型号： | BFS17WH6327XTSA1 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：514K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFS17W
NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
3
2
1
• Pb-free (RoHS compliant) package
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17W
Marking
MCs
Pin Configuration
2 = E 3 = C
Package
SOT323
1 = B
Maximum Ratings at T = 25 °C, unless otherwise specified
Parameter
Symbol
Value
15
25
2.5
25
50
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation
V
V
V
CEO
CBO
EBO
mA
mW
°C
I
C
I
CM
1)
280
P
tot
T ≤ 93 °C
S
150
-65 ... 150
-65 ... 150
Junction temperature
Ambient temperature
Storage temperature
T
J
T
A
T
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 205
Unit
K/W
2)
R
thJS
1
T is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-07-20
1
BFS17W
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
15
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
µA
Collector-base cutoff current
I
CBO
V
V
= 10 V, I = 0
-
-
-
-
-
-
0.05
10
100
CB
CB
E
= 25 V, I = 0
E
Emitter-base cutoff current
= 2.5 V, I = 0
I
EBO
V
EB
C
-
DC current gain
I = 2 mA, V = 1 V, pulse measured
h
FE
40
20
-
70
150
-
C
CE
I = 25 mA, V = 1 V, pulse measured
C
CE
Collector-emitter saturation voltage
I = 10 mA, I = 1 mA
V
-
0.1
0.4
V
CEsat
C
B
2011-07-20
2
BFS17W
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics (verified by random sampling)
GHz
Transition frequency
f
T
I = 2 mA, V = 5 V, f = 200 MHz
1
1.3
1.4
2.5
-
-
C
CE
I = 25 mA, V = 5 V, f = 200 MHz
C
CE
-
-
-
-
0.55
0.3
0.9
3.5
0.8 pF
Collector-base capacitance
= 5 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
cb
ce
eb
V
CB
BE
-
Collector emitter capacitance
V
= 5 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
1.45
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
EB
CB
collector grounded
5
dB
Minimum noise figure
NF
min
I = 2 mA, V = 5 V, Z = 50 Ω,
C
CE
S
f = 800 MHz
2
Transducer gain
|S
|
-
-
-
14
22.5
11
-
-
-
dB
dBm
-
21e
3
I = 20 mA, V = 5 V, Z = Z = 50Ω,
C
CE
S
L
f = 500 MHz
Third order intercept point at output
= 5 V, I = 20 mA, f = 800 MHz,
IP
V
CE
C
Z = Z
, Z = Z
S
Sopt
L Lopt
1dB compression point
P
-1dB
I = 20 mA, V = 5 V, Z = Z = 50Ω,
C
CE
S
L
f = 800 MHz
2011-07-20
3
BFS17W
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
K/W
320
mW
240
200
160
120
80
10 2
0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
40
10 0
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
0
15 30 45 60 75 90 105 120
150
°C
S
T
t
p
Permissible Pulse Load
Collector-base capacitance C = ƒ(V
)
cb
CB
P
/P
= ƒ(t )
Emitter-base capacitance C = ƒ(V )
totmax totDC
p
eb
EB
f = 1 MHz
10 3
-
1.2
pF
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
CEB
0.2
CCB
0.5
0
0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
2
4
6
8
10 12 14 16
20
s
V
t
V
, V
p
CB EB
2011-07-20
4
BFS17W
Transition frequency f = ƒ(I )
T
C
V
= parameter
CE
3
10V
GHz
5V
3V
2
1.5
1
2V
1V
0.5
0
0.7V
mA
0
5
10
15
20
30
I
C
2011-07-20
5
Package SOT323
BFS17W
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2011-07-20
6
BFS17W
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-07-20
7
相关型号：
BFS17WH6393
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3
INFINEON
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