BFS17W. [INFINEON]
?For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA? ; ？对于宽带放大器高达1 GHz的集电极电流为1 mA至20 mA ？\n
| 型号： | BFS17W. |
| 厂家： | 
Infineon |
| 描述： | ?For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA?
|
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFS17W
NPN Silicon RF Transistor
3
For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
2
1
VSO05561
Type
Marking
Pin Configuration
Package
BFS17W
MCs
1 = B
2 = E
3 = C
SOT323
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
15
25
V
V
V
V
CEO
CBO
EBO
2.5
25
Collector current
mA
mW
°C
I
C
50
Peak collector current, f = 10 MHz
I
CM
280
Total power dissipation
P
tot
1)
T
S
93 °C
Junction temperature
Ambient temperature
Storage temperature
150
T
j
-65 ... 150
-65 ... 150
T
T
A
stg
Thermal Resistance
2)
K/W
Junction - soldering point
R
205
thJS
1
T is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Jul-13-2001
BFS17W
Electrical Characteristics a T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
Collector-emitter breakdown voltage
15
-
-
V
V
(BR)CEO
I = 1 mA, I = 0
C
B
Collector-base cutoff current
µA
I
CBO
V
V
= 10 V, I = 0
-
-
-
-
0.05
10
CB
CB
E
= 25 V, I = 0
E
Emitter-base cutoff current
= 2.5 V, I = 0
-
-
100
I
EBO
V
EB
C
DC current gain
I = 2 mA, V = 1 V
-
h
FE
20
20
-
150
-
C
CE
I = 25 mA, V = 1 V
70
C
CE
Collector-emitter saturation voltage
I = 10 mA, I = 1 mA
-
0.1
0.4
V
V
CEsat
C
B
2
Jul-13-2001
BFS17W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC characteristics
Transition frequency
GHz
f
T
I = 2 mA, V = 5 V, f = 200 MHz
1
1.4
2.5
-
-
C
CE
I = 25 mA, V = 5 V, f = 200 MHz
1.3
C
CE
Collector-base capacitance
= 5 V, f = 1 MHz
-
-
-
-
-
0.6
0.26
1.45
-
0.8 pF
C
cb
V
CB
Collector-emitter capacitance
= 5 V, f = 1 MHz
-
-
C
ce
V
CE
Input capacitance
= 0.5 V, I = 0 , f = 1 MHz
C
ibo
V
EB
C
Output capacitance
= 5 V, V = 0 , f = 1 MHz
1.5
C
obs
V
CE
BE
Noise figure
I = 2 mA, V = 5 V, f = 800 MHz,
3.5
5
-
dB
F
C
CE
Z = 0
S
2
Transducer gain
-
-
-
12.7
100
23
|S
|
21e
I = 20 mA, V = 5 V, Z = Z = 50 ,
C
CE
S
L
f = 500 MHz
Linear output voltage
I = 14 mA, V = 5 V, d = 60 dB,
-
mV
V =V
01 02
C
CE
im
f = 806 MHz, f = 810 MHz, Z = Z = 50
1
2
S
L
Third order intercept point
-
dBm
IP
3
I = 14 mA, V = 5 V, Z = Z = 50 ,
C
CE
S
L
f = 800 MHz
3
Jul-13-2001
BFS17W
Total power dissipation P = f(T )
tot
S
320
mW
240
200
160
120
80
40
0
0
15 30 45 60 75 90 105 120
150
°C
T
S
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/P
= f (t )
totmax totDC
p
10 3
K/W
10 3
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
10 1
10 0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 1
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
4
Jul-13-2001
BFS17W
Collector-base capacitance C = f (V )
Transition frequency f = f (I )
cb
CB
T
C
f = 1MHz
V
= Parameter
CE
1.3
pF
3.0
10V
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
GHz
5V
3V
2.0
1.5
1.0
0.5
0.0
2V
1V
0.7V
0.0
0
V
mA
4
8
12
16
20
26
0
5
10
15
20
30
V
CB
I
C
5
Jul-13-2001
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