BC847QAS [NXP]
SMALL SIGNAL TRANSISTOR;
| 型号： | BC847QAS |
| 厂家： | 
NXP |
| 描述： | SMALL SIGNAL TRANSISTOR |
| 文件： | 总4页 (文件大小：1355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Small & Powerful
NXP MOSFETs and
bipolar transistors
in DFN1010
First 3 A transistors in a 1.1 mm²
leadless plastic package
This new product series, housed in tiny leadless packages and ideal for use in tight-
footprint power management and load switches, includes small yet powerful high-Ptot
MOSFETs as well as bipolar transistors with benchmark values for RDSon and VCEsat
.
KEY FEATURES
KEY APPLICATIONS
Single and dual MOSFETs (N-ch/P-ch)
` Low RDSon down to 34 mΩ
` Portable, mobile, and automotive applications that requires
small-footprint solutions
` ID up to 3.2 A
` Power management
` Low voltage drive (VGS(th) = 0.65 V typ.)
` Voltage range of 12 to 80 V
` ESD protection of more than 1 kV
` Charging circuits
` Power switches (motors, fans, etc.)
` Level shifting
` LED lighting (automotive matrix light, etc.)
Single bipolar transistors
` Low VCEsat values down to 70 mV
` Collector current (IC) up to 2 A
` Peak collector current (ICM) up to 3 A
` VCEO of 30 and 60 V
DFN1010 package
` Ultra-small and flat package (1.1 x 1 x 0.37 mm)
` Single and dual configurations (smallest package for dual
transistors)
` AEC-Q101 qualified
` Power dissipation (Ptot) of 1 W (DFN1010D-3)
` Single package with tin-plated, solderable side pads for
improved mounting and automotive conformity
Dual NPN/PNP resistor-equipped (digital) transistor
` 100 mA, R1=R2=47 kΩ
` AEC-Q101 qualified
Single and dual general-purpose transistors
Selection guide: Single and dual MOSFETs
DFN1010D-3
(SOT1215)
DFN1010B-6
(SOT1216)
Package
Size (mm)
Ptot (mW)
1.1 x 1.0 x 0.37 1.1 x 1.0 x 0.37
1000
350
ESD
protection
(kV)
Vgs (th)
min (V) max (V)
Vgs (th)
RDSon typ /max (mΩ)
Configuration Polarity VDS (V) VGS (V)
ID (A)
@ 4.5 V
@ 2.5 V
@ 1.5 V
Single
Single
Single
Single
Single
Single
Single
Single
Single
N
N
N
N
N
P
P
P
P
20
30
12
30
80
20
20
30
12
8
20
8
20
20
8
8
20
8
3.2
3.2
1.1
3.2
1.1
0.5
1
0.4
1
1.3
0.45
0.45
1
0.9
2
1
-
1
1
2
1
1.5
1
42 / 54
56 / 65
34 / 45
56 / 79
390 / 540
90
48 / 68
64 / 120
PMXB43UNE
PMXB56EN
-
-
0.9
2.5
2.7
0.95
0.95
2.5
0.95
39 / 64
-
-
-
50 / 100
PMXB40UNE
PMXB65ENE
PMXB360ENEA
PMXB75UPE*
PMXB350UPE
PMXB120EPE
PMXB65UPE*
-
-
-
1.2
2.4
2.4
350 / 447
125 /170
80
450 / 645
760 / 2000
-
-
-
-
0.45
1.5
1125 /
3000
Dual
Dual
N
P
20
20
20
20
8
8
8
8
0.6
0.5
0.6
0.5
0.45
0.45
0.45
0.45
0.95
0.95
0.95
0.95
1
1
1
1
470 / 620
620 / 850
PMDXB600UNE
PMDXB950UPE
PMCXB900UE
1020
/1400
1270 /
2200
2300 /
5000
1125 /
3000
N
P
470 / 620
620 / 850
Compl.
1020
/1400
1270 /
2200
2300 /
5000
Selection guide: Low-saturation bipolar transistors
DFN1010D-3
(SOT1215)
Package
Size
1.1 x 1.0 x 0.37
1000
Ptot (mW)
VCESat typ.
IC=0.5A
IB=50mA
RCESat typ.
(at) IC/IB=10
VCESat
max (mV)
VCEO (V)
IC (A)
ICM (A) hFE min/typ
(at)IC(A)
(at)VCE (V)
(at)IC (A)
(at)IB (A)
230/380
180/295
230/380
180/295
150/240
120/185
120/185
150/240
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2
2
2
2
2
2
2
2
175
160
135
125
170
225
205
125
90
85
75
70
235
240
350
330
235
330
500
350
1
1
2
2
1
1
1.7
2
0.1
0.1
0.2
0.2
0.1
0.1
0.17
0.2
PBSS4130QA
PBSS5130QA
PBSS4230QA
PBSS5230QA
PBSS4160QA
PBSS5160QA
PBSS5260QA
PBSS4260QA
1
2
1
1.5
30
3
90
1.5
125
105
75
60
1.7
2
2.5
3
Selection guide: General-purpose transistors
DFN1010B-6
(SOT1216)
Package
Size
1.0 x 1.0 x 0.37
350
Ptot (mW)
VCEO (V)
IC (mA)
hFE min
hFE max
fT min (MHz)
BC847QAPN
BC847QAS *
BC857QAS *
45
100
200
450
100
Selection guide: Resistor-equipped transistor
DFN1010B-6
(SOT1216)
Package
Size
1.0 x 1.0 x 0.37
350
Ptot (mW)
VCEO (V)
IC (mA)
Configuration
R1(kOhm) / R2 (kOhm)
Configuration
50
100
R1=R2
47
NPN / PNP
PQMD12
* in development
Load switch with P-ch. MOSFET
LED matrix light
BODY DIODE
V
in
V
out
CTRL 1
CTRL 2
CTRL 3
CTRL 4
LED1 T1
LED2 T2
LED3 T3
LED4 T4
MLC
GATE1
BS1
LOAD PATH
P-FET
VP
R1
VGG
LX1
RSH1
RSL1
NXP
solid state
lighting
R2
PWM1
PWM2
CS
R
LOAD
GATE2
BS2
EN
CONTROL N-FET
SCL
SDI
CONTROL SIGNAL
BODY DIODE
SDO
VCC
CTRL n
LX2
RSH2
RSL2
LEDn Tn
GND
aaa-009796
DC/DC converter (e.g. PMXB56EN)
Logic gates with dual N-ch. MOSFET (e.g. PMDXB600UNE)
NOR gate
NAND gate
High power density
With a power dissipation density rating
of 1000 mW per mm² , the DFN1010
package exceeds the performance of
leaded packages like the SO8 by a factor
of 16. The result is comparable thermal
performance on a smaller mounting area,
for smaller designs.
Dual DFN1010 types
Replace larger packages with comparables RDSon values
Dual types: SOT963
Dual
DFN1010B-6
package
2 x Single types: DFN0806
www.nxp.com
© 2013 NXP Semiconductors N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and
may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof
does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Date of release: October 2013
Document order number: 9397 750 17485
Printed in the Netherlands
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