BC847S [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BC847S |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846S ... BC848S
NPN
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-04-09
Dimensions / Maße in mm
Power dissipation – Verlustleistung
310 mW
SOT-363
2±0.1
6.5 6.5
Plastic case
Kunststoffgehäuse
0.9±0.1
6
5
4
Weight approx. – Gewicht ca.
0.01 g
Type
Code
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1
2
3
2.4
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
6 = C1 5 = B2 4 = E2
1 = E1 2 = B1 3 = C2
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC846S
65 V
BC847S
45 V
BC848S
30 V
Collector-Emitter-voltage
B open
E open
C open
VCE0
VCB0
VEB0
Ptot
Collector-Base-voltage
80 V
50 V
30 V
Emitter-Base-voltage
6 V
5 V
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
310 mW 1)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
ICM
IBM
- IEM
Tj
200 mA
200 mA
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
200 mA
150/C
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 :A
VCE = 5 V, IC = 2 mA
hFE
hFE
typ. 90 ... 270
110 ... 800
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220 ... 600
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
hie
1.6 ... 15 kS
18 ...110 :S
hoe
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 ... 3 *10-4
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
12
General Purpose Transistors
BC846S ... BC848S
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
–
–
90 mV
200 mV
250 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
–
–
700 mV
900 mV
–
–
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VBEon
VBEon
580 mV
–
660 mV
–
700 mV
770 mV
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
IE = 0, VCB = 30 V, Tj = 150/C
ICB0
–
–
–
–
15 nA
5 :A
ICB0
IEB0
fT
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
–
–
100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
100 MHz
–
6 pF
–
Collector-Base Capacit. – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
–
–
3.5 pF
9 pF
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
CEB0
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz, )f = 200 Hz
F
–
2 dB
10 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC856S ... BC858S
Pinning – Anschlußbelegung
6
5
4
T2
T1
1
2
3
1
2
)
)
Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
13
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