BC847S [KEXIN]
NPN Multi-Chip General Purpose Amplifier; NPN多芯片通用放大器
| 型号： | BC847S |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Multi-Chip General Purpose Amplifier |
| 文件： | 总1页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Multi-Chip General Purpose Amplifier
KC847S(BC847S)
SOT-363
Unit: mm
+0.1
1.3
-0.1
0.65
Features
High current gain
Low collector-emitter saturation voltage
+0.05
0.1
-0.02
+0.1
0.3
-0.1
+0.1
2.1
-0.1
1 E1
2 B1
3 C2
4 E2
5 B2
6 C1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
50
45
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
6.0
V
Collector Current
100
mA
mW
mW/
/W
Total Device Dissipation
300
PD
2.4
Derate above 25
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
R
JA
415
TJ, Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
50
Typ
Max
Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCBO
VCEO
VEBO
V
V
IC = 10 A, IE = 0
IC = 10 mA, IB = 0
45
6.0
V
IE = 10 A, IC = 0
VCB = 30 V, IE = 0
15
nA
Collector-Cutoff Current
DC Current Gain
ICBO
hFE
5.0
VCB = 30 V, IE = 0, TA = 150
IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
VCB = 10 V, f = 1.0 MHz
IC = 20 mA, VCE = 5.0,f = 100 mHz
A
110
630
0.25
0.65
0.7
V
V
Collector-Emitter Saturation Voltage
VCE(sat)
0.58
V
Base-Emitter ON Voltage
VBE(on)
0.77
V
Output Capacitance
Transistion frequency
Cob
fT
2.0
pF
MHz
200
Marking
Marking
1C
1
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