BC847S [FAIRCHILD]
NPN Multi-Chip General Purpose Amplifier; NPN多芯片通用放大器
| 型号： | BC847S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Multi-Chip General Purpose Amplifier |
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847S
E2
B2
C1
C2
SC70-6
Mark: 1C
B1
pin #1
E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 07.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
45
50
V
V
4
50
V
6.0
V
Collector Current - Continuous
200
mA
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
BC847S
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
300
2.4
415
mW
mW/°C
°C/W
RθJA
2001 Fairchild Semiconductor Corporation
Rev.A1
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
45
50
50
6.0
V
V
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IC = 10 µA, IE = 0
V
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 30 V, IE = 0
V
15
nA
VCB = 30 V, IE = 0, TA = 150°C
5.0
µ
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 2.0 mA, VCE = 5.0 V
110
630
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
0.25
0.65
0.7
V
VCE(sat)
V
V
V
Base-Emitter ON Voltage
IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
0.58
VBE(on)
0.77
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 5.0,
f = 100 mHz
VCB = 10 V, f = 1.0 MHz
200
2.0
MHz
pF
fT
Output Capacitance
Cobo
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
1200
1000
800
600
400
200
0
0.3
0.25
0.2
VCE = 5.0 V
125 °C
β = 10
125 °C
0.15
0.1
25 °C
25 °C
- 40 °C
- 40 °C
0.05
0.01 0.03 0.1 0.3
1
3
10
30
100
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
1
- 40 °C
- 40 °C
0.8
0.8
25 °C
25 °C
0.6
0.6
125 °C
125 °C
0.4
0.4
β = 10
VCE = 5.0 V
0.2
0.2
0.1
1
10
100
0.1
1
10
40
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
5
4
3
2
1
0
10
f = 1.0 MHz
VCB = 45V
C
te
1
4
C
ob
0.1
0
4
8
12
16
20
25
50
75
100
125
150
REVERSE BIAS VOLTAGE (V)
T - AMBIE NT TEMP ERATURE ( C)
°
A
Contours of Constant Gain
Bandwidth Product (fT )
Normalized Collector-Cutoff Current
vs Ambient Temperature
10
7
1000
100
10
175 MHz
5
150 MHz
3
2
125 MHz
100 MHz
75 MHz
1
1
0.1
1
10
100
25
50
75
100
125
150
I C - COLLECTOR CURRENT (mA)
TA - AMBIENT TEMPERATURE ( C)
°
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Wideband Noise Frequency
vs Source Resistance
10
I
= 200 µA,
= 10 kΩ
C
5
R
VCE = 5.0 V
S
8
6
4
2
I
R
= 100 µA,
C
BANDWIDTH = 15.7 kHz
4
3
2
1
= 10 kΩ
S
I
= 100 µA
C
I
R
= 1.0 mA,
= 500 Ω
C
S
I
= 30 µA
C
I
R
= 1.0 mA,
= 5.0 kΩ
C
S
V
= 5.0V
CE
I
= 10 µA
C
0
0
1,000
2,000
5,000
10,000
20,000
50,000
100,000
0.0001 0.001
0.01
0.1
1
10
100
R
- SOURCE RESISTANCE (Ω )
f - FREQUENCY (MHz)
S
Power Dissipation vs
Ambient Temperature
500
400
SC70-6
300
200
100
0
0
25
50
75
100
125
150
TEMPERATURE (ºC)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
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FAST®
FASTr™
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OPTOLOGIC™
OPTOPLANAR™
PACMAN™
SMART START™
STAR*POWER™
Stealth™
VCX™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
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GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
POP™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
FACT™
FACT Quiet Series™
UHC™
UltraFET®
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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