BC817-25TRL [NXP]
TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal;
| 型号： | BC817-25TRL |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal 晶体 晶体管 |
| 文件： | 总8页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC817
NPN general purpose transistor
1999 Jun 01
Product specification
Supersedes data of 1997 Mar 12
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817
FEATURES
PINNING
PIN
• High current (max. 500 mA)
• Low voltage (max. 45 V).
DESCRIPTION
1
2
3
base
emitter
collector
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BC807.
handbook, halfpage
3
3
2
MARKING
1
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
1
2
BC817
6D
6A
BC817-25
BC817-40
6B
6C
Top view
MAM255
BC817-16
Note
Fig.1 Simplified outline (SOT23) and symbol.
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
open base; IC = 10 mA
open collector
45
5
500
1
mA
A
ICM
IBM
200
250
+150
150
+150
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb ≤ 25 °C; note 1
−65
−
junction temperature
operating ambient temperature
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Jun 01
2
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 20 V
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
−
−
−
−
−
−
100
5
nA
µA
nA
IE = 0; VCB = 20 V; Tj = 150 °C
IEBO
hFE
emitter cut-off current
DC current gain
BC817
IC = 0; VEB = 5 V
100
IC = 100 mA; VCE = 1 V; note 1;
see Figs 2, 3 and 4
100
100
160
250
40
−
−
−
−
−
−
−
5
−
600
250
400
600
−
BC817-16
BC817-25
BC817-40
hFE
VCEsat
VBE
Cc
DC current gain
IC = 500 mA; VCE = 1 V; note 1
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
−
700
1.2
−
mV
V
base-emitter voltage
collector capacitance
transition frequency
IC = 500 mA; VCE = 1 V; note 2
IE = ie = 0; VCB = 10 V; f = 1 MHz;
IC = 10 mA; VCE = 5 V; f = 100 MHz;
−
−
pF
fT
100
−
MHz
Notes
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. VBE decreases by approx. 2 mV/K with increasing temperature.
1999 Jun 01
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817
MBH721
20
h
FE
160
V
= 1 V
CE
120
80
40
0
10
−1
2
3
1
10
10
10
I
(mA)
C
BC817-16.
Fig.2 DC current gain; typical values.
MBH720
500
h
FE
400
V
= 1 V
CE
300
200
100
0
−1
2
3
10
1
10
10
10
I
(mA)
C
BC817-25.
Fig.3 DC current gain; typical values.
4
1999 Jun 01
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817
MBH722
500
h
FE
400
V
= 1 V
CE
300
200
100
0
10
−1
2
3
1
10
10
10
I
(mA)
C
BC817-40.
Fig.4 DC current gain; typical values.
1999 Jun 01
5
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 Jun 01
6
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 01
7
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© Philips Electronics N.V. 1999
SCA65
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Printed in The Netherlands
15002/03/pp8
Date of release: 1999 Jun 01
Document order number: 9397 750 05955
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