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BC817-25W [SECOS]

NPN Plastic Encapsulate Transistor; NPN塑料封装晶体管
BC817-25W
型号： BC817-25W
厂家： SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述：

NPN Plastic Encapsulate Transistor
NPN塑料封装晶体管

晶体 晶体管 开关 光电二极管
文件： 总2页 (文件大小：235K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BC817 -16W, -25W, -40W  
500 mA, 50 V  
NPN Plastic Encapsulate Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-323  
FEATURES  
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
A
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
PACKAGE INFORMATION  
D
Weight: 0.0074 g (approximately)  
H
J
G
Collector  
  
Millimeter  
Millimeter  
Min. Max.  
0.100 REF.  
0.525 REF.  
REF.  
REF.  
Min.  
Max.  
2.20  
2.45  
1.35  
1.10  
1.40  
0.40  
A
B
C
D
E
F
1.80  
1.80  
1.15  
0.80  
1.20  
0.20  
G
H
J
K
L
MARKING  
  
Base  
0.08  
0.25  
-
-
BC817-16W:  
BC817-25W:  
BC817-40W:  
6A  
0.650 TYP.  
6B  
  
6C , YM  
Emitter  
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C  
Parameter  
Symbol  
VCBO  
Ratings  
Unit  
V
Collector to Base Voltage  
50  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCEO  
45  
5
V
VEBO  
V
IC  
500  
mA  
mW  
℃
Collector Power Dissipation  
Junction, Storage Temperature  
PC  
300  
TJ, TSTG  
-55 ~ +150  
CHARACTERISTICS at Ta = 25°C  
Parameter  
Collector-base Breakdown Voltage  
Collector-emitter Breakdown Voltage  
Emitter-base Breakdown Voltage  
Collector Cut-off Current  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min.  
Max.  
-
Unit  
Test Conditions  
50  
45  
5
-
V
IC = 10 uA, IE = 0  
-
V
IC = 10 mA, IB = 0  
-
V
IE = 1 uA, IC = 0  
0.1  
0.1  
0.7  
1.2  
1.2  
600  
-
uA  
uA  
V
VCB = 20V, IE = 0  
Emitter Cut-off Current  
IEBO  
-
VEB = 5V, IC = 0  
Collector-emitter Saturation Voltage  
Base-emitter Saturation Voltage  
Base-emitter Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE(1)  
-
IC = 500mA, IB = 50 mA  
IC = 500mA, IB = 50 mA  
VCE = 1V, IC = 500mA  
VCE = 1 V, IC = 100 mA  
VCE = 1 V, IC = 500 mA  
-
V
V
DC Current Gain  
100  
40  
DC Current Gain  
hFE(2)  
V
CE = 5 V, IC = 10 mA,  
Transition Frequency  
Collector Capacitance  
fT  
100  
-
-
MHz  
pF  
f = 100MHz  
CC  
5
VCB = 10V, f=1MHz  
CLASSIFICATION OF hFE(1)  
Rank  
BC817-16W  
BC817-25W  
BC817-40W  
Range  
100 - 250  
160 - 400  
250 - 600  
28-Jul-2010 Rev. C  
Page 1 of 2  
BC817 -16W, -25W, -40W  
500 mA, 50 V  
NPN Plastic Encapsulate Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
28-Jul-2010 Rev. C  
Page 2 of 2  

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