BC817-25W [DIOTEC]
Small Signal Bipolar Transistor, NPN,;型号: | BC817-25W |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | Small Signal Bipolar Transistor, NPN, 开关 光电二极管 晶体管 |
文件: | 总2页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC 817W / BC 818W
NPN
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
225 mW
SOT-323
±0.1
±0.1
Plastic case
2
1
0.3
Kunststoffgehäuse
3
Type
Weight approx. – Gewicht ca.
0.01 g
Code
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.3
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 817W
BC 818W
25 V
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
B shorted VCES
E open
C open
VCE0
45 V
50 V
50 V
30 V
30 V
VCB0
VEB0
Ptot
IC
ICM
IBM
- IEM
Tj
5 V
225 mW 1)
500 mA
1000 mA
200 mA
1000 mA
150ꢀC
TS
- 65…+ 150ꢀC
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 1 V, IC = 100 mA
VCE = 1 V, IC = 500 mA
hFE
hFE
100
40
–
–
600
–
BC817W
BC818W
Group -16W hFE
Group -25W hFE
Group -40W hFE
100
160
250
160
250
400
250
400
600
VCE = 1 V, IC = 100 mA
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
8
01.11.2003
General Purpose Transistors
BC 817W / BC 818W
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
0.7 V
1.2 V
1.2 V
Collector saturation voltage – Kollektor-Sättigungsspg.
IC = 500 mA, IB = 50 mA
VCEsat
–
–
–
–
–
–
Base saturation voltage – Basis-Sättigungsspannung
IC = 500 mA, IB = 50 mA
VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 1 V, - IC = 500 mA
VBE
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 20 V
ICB0
ICB0
–
–
–
–
100 nA
5 ꢀA
IE = 0, VCB = 20 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
IEB0
fT
–
–
100 nA
–
100 MHz 170 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
6 pF
–
Thermal resistance junction to ambient air
RthA
620 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 807W / BC 808W
BC 817-16W = 6A BC 817-25W = 6B BC 817-40W = 6C
BC 817W = 6D
BC 818-16W = 6E BC 818-25W = 6F BC 818-40W = 6G
BC 818W = 6H
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
9
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