BC817-25W [DIOTEC]

Small Signal Bipolar Transistor, NPN,;
BC817-25W
型号: BC817-25W
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, NPN,

开关 光电二极管 晶体管
文件: 总2页 (文件大小:118K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC 817W / BC 818W  
NPN  
General Purpose Transistors  
Surface mount Si-Epitaxial PlanarTransistors  
NPN  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
Power dissipation – Verlustleistung  
225 mW  
SOT-323  
±0.1  
±0.1  
Plastic case  
2
1
0.3  
Kunststoffgehäuse  
3
Type  
Weight approx. – Gewicht ca.  
0.01 g  
Code  
1
2
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.3  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 817W  
BC 818W  
25 V  
Collector-Emitter-voltage  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
Peak Coll. current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
B open  
B shorted VCES  
E open  
C open  
VCE0  
45 V  
50 V  
50 V  
30 V  
30 V  
VCB0  
VEB0  
Ptot  
IC  
ICM  
IBM  
- IEM  
Tj  
5 V  
225 mW 1)  
500 mA  
1000 mA  
200 mA  
1000 mA  
150C  
TS  
- 65…+ 150C  
Characteristics, Tj = 25C  
Kennwerte, Tj = 25C  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
VCE = 1 V, IC = 100 mA  
VCE = 1 V, IC = 500 mA  
hFE  
hFE  
100  
40  
600  
BC817W  
BC818W  
Group -16W hFE  
Group -25W hFE  
Group -40W hFE  
100  
160  
250  
160  
250  
400  
250  
400  
600  
VCE = 1 V, IC = 100 mA  
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
8
01.11.2003  
General Purpose Transistors  
BC 817W / BC 818W  
Characteristics, Tj = 25C  
Kennwerte, Tj = 25C  
Min.  
Typ.  
Max.  
0.7 V  
1.2 V  
1.2 V  
Collector saturation voltage – Kollektor-Sättigungsspg.  
IC = 500 mA, IB = 50 mA  
VCEsat  
Base saturation voltage – Basis-Sättigungsspannung  
IC = 500 mA, IB = 50 mA  
VBEsat  
Base-Emitter voltage – Basis-Emitter-Spannung  
VCE = 1 V, - IC = 500 mA  
VBE  
Collector-Base cutoff current – Kollektorreststrom  
IE = 0, VCB = 20 V  
ICB0  
ICB0  
100 nA  
5 A  
IE = 0, VCB = 20 V, Tj = 150C  
Emitter-Base cutoff current – Emitterreststrom  
IC = 0, VEB = 4 V  
Gain-Bandwidth Product – Transitfrequenz  
VCE = 5 V, IC = 10 mA, f = 50 MHz  
IEB0  
fT  
100 nA  
100 MHz 170 MHz  
Collector-Base Capacitance – Kollektor-Basis-Kapazität  
VCB = 10 V, IE = ie = 0, f = 1 MHz  
CCB0  
6 pF  
Thermal resistance junction to ambient air  
RthA  
620 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
Recommended complementary PNP transistors  
Empfohlene komplementäre PNP-Transistoren  
BC 807W / BC 808W  
BC 817-16W = 6A BC 817-25W = 6B BC 817-40W = 6C  
BC 817W = 6D  
BC 818-16W = 6E BC 818-25W = 6F BC 818-40W = 6G  
BC 818W = 6H  
Marking of available current gain  
groups per type  
Stempelung der lieferbaren Strom-  
verstärkungsgruppen pro Typ  
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
01.11.2003  
9

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