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BC817-25W [TYSEMI]

High current. Low voltage. Collector-base voltage VCBO 50 V; 大电流。低电压。集电极 - 基极电压VCBO 50 V
BC817-25W
型号： BC817-25W
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

High current. Low voltage. Collector-base voltage VCBO 50 V
大电流。低电压。集电极 - 基极电压VCBO 50 V

晶体 晶体管 开关 光电二极管
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中文：  中文翻译
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TransistIoCrs  
Product specification  
BC817W  
Features  
High current.  
Low voltage.  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
50  
Collector-emitter voltage (IC = 10 mA)  
Emitter-base voltage  
45  
V
5
500  
V
Collector current (DC)  
mA  
A
Peak collector current  
ICM  
1
Peak base current  
IBM  
200  
mA  
mW  
Total power dissipation  
Ptot  
200  
Storage temperature  
Tstg  
-65 to +150  
150  
Junction temperature  
Tj  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Ramb  
Rth j-a  
-65 to +150  
625  
K/W  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
TransistIoCrs  
Product specification  
BC817W  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
IE = 0 A; VCB = 20 V  
Min  
Typ  
Max  
100  
5
Unit  
nA  
Collector cutoff current  
Emitter cutoff current  
ICBO  
ìA  
nA  
IE = 0 A; VCB = 20 V;Tj = 150  
IC = 0 A; VEB = 5 V  
IEBO  
100  
600  
250  
400  
600  
700  
1.2  
BC817W  
100  
100  
160  
250  
BC817-16W  
BC817-25W  
BC817-40W  
DC current gain  
hFE  
IC = 100 mA; VCE = 1 V *  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat) IC = 500 mA; IB = 50 mA  
mV  
V
VBE  
CC  
fT  
IC = 500 mA; VCE = 1 V  
Collector capacitance  
IE = ie = 0 A; VCB = 10 V;f = 1 MHz  
IC = 10 mA; VCE = 5 V;f = 100 MHz  
3
pF  
Transition frequency  
100  
MHz  
* Pulse test: t  
300ìs, D  
2%.  
hFE Classification  
TYPE  
BC817W  
6D  
BC817-16W BC817-25W  
BC817-40W  
Marking  
6A  
6B  
6C  
4008-318-123  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  

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