AU5780AD [NXP]

SAE/J1850/VPW transceiver; SAE / J1850 / VPW收发器
AU5780AD
型号: AU5780AD
厂家: NXP    NXP
描述:

SAE/J1850/VPW transceiver
SAE / J1850 / VPW收发器

光电二极管
文件: 总12页 (文件大小:83K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
AU5780A  
SAE/J1850/VPW transceiver  
Product data  
2001 Jun 19  
Supersedes data of 1999 Jan 28  
Philips  
Semiconductors  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
FEATURES  
DESCRIPTION  
The AU5780A is a line transceiver being primarily intended for  
in-vehicle multiplex applications. It provides interfacing between a  
link controller and the physical bus wire. The device supports the  
SAE/J1850 VPWM standard with a nominal bus speed of 10.4 kbps.  
Supports SAE/J1850 VPW standard for in-vehicle class B  
multiplexing  
Bus speed 10.4 kbps nominal  
Drive capability 32 bus nodes  
Low RFI due to output waveshaping with adjustable slew rate  
PIN CONFIGURATION  
Direct battery operation with protection against +50V load dump,  
jump start and reverse battery  
Bus terminals proof against automotive transients up to  
1
8
7
6
BATT  
TX  
GND  
–200V/+200V  
Thermal overload protection  
2
3
BUS_OUT  
/LB  
Very low bus idle power consumption  
Diagnostic loop-back mode  
AU5780A  
R/F  
4X mode (41.6 kbps) reception capability  
ESD protected to 9 KV on bus and battery pins  
8-pin SOIC  
RX  
4
5
BUS_IN  
SO8  
SL01207  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
Operating supply voltage  
Operating ambient temperature  
Battery voltage  
CONDITIONS  
MIN.  
6
TYP.  
12  
MAX.  
24  
UNIT  
V
V
°C  
V
BATT.op  
A
T
–40  
+125  
+50  
220  
+20  
8.0  
V
load dump; 1s  
=12V  
BATT.ld  
BATT.lp  
I
Bus idle supply current  
Bus voltage  
V
µA  
V
BATT  
V
V
0 < V  
< 24V  
–20  
7.3  
27  
B
BATT  
Bus output voltage  
300< R < 1.6kΩ  
V
BOH  
L
–I  
Bus output source current  
Bus input threshold  
0V < V < +6.0V  
50  
mA  
V
BO.LIM  
BI  
BO  
V
3.65  
13  
4.1  
t
Delay TX to BUS_OUT, normal battery  
Measured at 3.875V  
Measured between  
21  
µs  
µs  
bo  
t , t  
BUS_OUT transition times, rise and fall,  
normal battery  
11  
18  
r
f
1.5 V and (V  
– 2.75 V),  
BATT  
9 < V  
< 16 V,  
BATT  
t tested at an additional bus  
r
load of R  
= 400 W and  
LOAD  
C
= 22000 pF  
LOAD  
ORDERING INFORMATION  
DESCRIPTION  
SO8: 8-pin plastic small outline package  
TEMPERATURE RANGE  
–40 to +125°C  
ORDER CODE  
DWG #  
AU5780AD  
SOT96-1  
2
2001 Jun 19  
853-2261 26558  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
BLOCK DIAGRAM  
BATTERY (+12V)  
BATT  
1
VOLTAGE  
LOW–POWER  
TIMER  
TEMP.  
REFERENCE  
PROTECTION  
BUS_OUT  
TX  
2
3
OUTPUT  
BUFFER  
7
TX–  
BUFFER  
Rb  
Rs  
R/F  
INPUT  
/LB  
6
Rf  
BUFFER  
Vcc  
Rd  
BUS_IN  
5
4
INPUT  
FILTER  
RX  
VOLTAGE  
REFERENCE  
AU5780  
8
GND  
SL01208  
3
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
PIN DESCRIPTION  
SYMBOL  
BATT  
TX  
PIN  
1
DESCRIPTION  
Battery supply input (12V nom.)  
2
Transmit data input; low: transmitter passive; high: transmitter active  
Rise/fall slew rate set input  
R/F  
3
RX  
4
Receive data output; low: active bus condition detected; float/high: passive bus condition detected  
BUS_IN  
/LB  
5
Bus line receive input  
6
Loop-back test mode control input; low: loop-back mode; high: normal communication mode  
BUS_OUT  
GND  
7
Bus line transmit output  
Ground  
8
the automotive environment. Specifically, the BATT input is  
FUNCTIONAL DESCRIPTION  
protected against 50V load dump, jump start and reverse battery  
condition. The BUS_OUT output is protected against wiring fault  
conditions, e.g., short circuit to battery voltage as well as typical  
automotive transients (i.e., –200V / +200V). In addition, an  
overtemperature shutdown function with hysteresis is incorporated  
which protects the device under system fault conditions. The chip  
temperature is sensed at the bus drive transistor in the output buffer.  
In case of the chip temperature reaching the trip point, the AU5780A  
will latch-off the transceiver function. The device is reset on the first  
rising edge on the TX input after a small decrease of the chip  
temperature.  
The AU5780A is an integrated line transceiver IC that interfaces an  
SAE/J1850 protocol controller IC to the vehicle’s multiplexed bus  
line. It is primarily intended for automotive “Class B” multiplexing  
applications in passenger cars using VPW (Variable Pulse Width)  
modulated signals with a nominal bit rate of 10.4 kbps. The  
AU5780A also receives messages in the so-called 4X mode where  
data is transmitted with a typical bit rate of 41.6 kbps. The device  
provides transmit and receive capability as well as protection to a  
J1850 electronic module.  
A J1850 link controller feeds the transmit data stream to the  
transceiver’s TX input. The AU5780A transceiver waveshapes the  
TX data input signal with controlled rise & fall slew rates and  
rounded shape. The bus output signal is transmitted with both  
voltage and current control. The BUS_IN input is connected to the  
physical bus line via an external resistor. The external resistor and  
an internal capacitance provides filtering against RF bus noise. The  
incoming signal is output at the RX pin being connected to the  
J1850 link controller.  
The AU5780A also provides a loop-back mode for diagnostic  
purpose. If the /LB pin is open circuit or pulled low, then TX signal is  
internally looped back to the RX output independent of the signals  
on the bus. In this mode the electronic module is disconnected from  
the bus, i.e., the TX signal is not output to the physical bus line. In  
this mode, it can be used, e.g., for self-test purpose.  
The AU5780A is an enhanced successor of the AU5780. The  
AU5780A provides improved wave shaping when exiting the low  
power standby mode for reduced EMI. Several parameters that  
were formerly only characterized to the maximum normal operating  
supply of 16 volts, have now been characterized to 24 volt supplies.  
These parameters which are tested and guaranteed to 24 volts are  
identified with appropriate test conditions in the “conditions” columns  
of the Characteristics tables, otherwise the conditions at the top of  
the characteristic table applies to all parameters.  
If the TX input is idle for a certain time, then the AU5780A enters a  
low-power mode. This mode is dedicated to help meet ignition-off  
current draw requirements. The BUS_IN input comparator is kept  
alive in the low-power mode. Normal power mode will be entered  
again upon detection of activity, i.e., rising edge at the TX input. The  
device is able to receive and transmit a valid J1850 message when  
initially in low-power mode.  
The AU5780A features special robustness at its BATT and  
BUS_OUT pins hence the device is well suited for applications in  
4
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
CONTROL INPUT SUMMARY  
RX  
(out)  
TX  
/LB  
MODE  
BIT VALUE  
BUS_OUT  
0
1
0
0
0
1
1
Loop-back  
Loop-back  
TX passive (default state)  
TX active  
float  
float  
float  
high  
float (high)  
low  
1
Communication  
Communication  
Transmitter passive  
Transmitter active  
bus state  
1
low  
NOTE:  
1. RX outputs the bus state. If the bus level is below the receiver threshold (i.e., all transmitters passive), then RX will be floating (i.e., high,  
considering external pull-up resistance). Otherwise, if the bus level is above the receiver threshold (i.e., at least one transmitter is active),  
then RX will be low.  
ABSOLUTE MAXIMUM RATINGS  
According to the IEC 134 Absolute Maximum System; operation is not guaranteed under these conditions; all voltages are referenced to pin 8  
(GND); positive currents flow into the IC; unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
–20  
MAX.  
+24  
UNIT  
V
V
V
V
V
V
V
V
V
V
supply voltage  
V
V
V
V
V
V
V
V
V
V
BATT  
short-term supply voltage  
transient supply voltage  
transient supply voltage  
transient supply voltage  
Bus voltage  
load dump; t < 1s  
+50  
BATT.ld  
BATT.tr1  
BATT.tr2  
BATT.tr3  
B
SAE J1113 pulse 1  
SAE J1113 pulses 2  
–100  
+150  
+200  
+20  
SAE J1113 pulses 3A, 3B  
–200  
–20  
1
R > 10 k; Rb >10Ω  
f
transient bus voltage  
SAE J1113 pulse 1  
–50  
B.tr1  
transient bus voltage  
SAE J1113 pulses 2  
SAE J1113 pulses 3A, 3B  
+100  
+200  
7
B.tr2  
transient bus voltage  
–200  
–0.3  
–9  
B.tr3  
DC voltage on pins TX, R/F, RX, /LB  
ESD capability of BATT pin  
I
ESD  
ESD  
ESD  
Air gap discharge,  
R=2k, C=150pF  
+9  
kV  
kV  
kV  
BATT  
ESD capability of BUS_OUT and BUS_IN pins Air gap discharge,  
R=2k, C=150pF, R > 10 kW  
–9  
–2  
+9  
+2  
bus  
f
ESD capability of TX, RX, R/F, and /LB pins  
Human Body,  
logic  
R=1.5k, C=100pF  
P
maximum power dissipation  
thermal impedance  
at T  
= +125 °C  
164  
mW  
°C/W  
°C  
tot  
amb  
Θ
152  
JA  
T
amb  
operating ambient temperature  
storage temperature  
–40  
–40  
–40  
+125  
+150  
+150  
265  
T
stg  
°C  
T
vj  
junction temperature  
°C  
T
LEAD  
Lead temperature  
Soldering, 10 seconds maximum  
No latch-up, |V | = 25 V  
°C  
I
I
Bus output clamp current  
Battery clamp current  
100  
mA  
mA  
CL(BUS)  
CL(BATT)  
BUS  
No latch-up or snap back,  
|V | = 25 V  
100  
BATT  
NOTE:  
1. For bus voltages –20V < V  
< –17V and +17V < V  
< +20V the current is limited by the external resistors R and R .  
bus b f  
bus  
5
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
CHARACTERISTICS  
–40°C < T  
< +125°C; 6V < V  
< 16V; V > 3V; 0 < V  
< +8.5V;  
amb  
BATT  
/LB  
BUS  
R = 56.2 kW R = 10 kW; R = 15 kW; R = 10W; 300 W< R < 1.6 kW;  
S
d
f
b
L
all voltages are referenced to pin 8 (GND); positive currents flow into the IC; unless otherwise specified.  
SYMBOL PARAMETER CONDITIONS MIN.  
supply current; bus idle TX low; Note 1  
TYP.  
MAX.  
220  
UNIT  
µA  
I
I
I
I
BATT.id  
supply current; passive state  
supply current; no load  
TX low  
1.5  
8
mA  
mA  
mA  
BATT.p  
TX high  
BATT.oc  
BATT(SB)  
supply current; bus output short to battery  
BUS to V  
; no I  
10  
BATT  
BO  
current, V = high  
TX  
I
supply current; bus short to GND  
Thermal shutdown  
TX high, V = 0V  
60  
mA  
°C  
°C  
%
BATT.sc  
BO  
T
155  
5
170  
15  
sd  
T
T
Thermal shutdown hysteresis  
Thermal shutdown, transmit duty cycle, at 24 V  
hys  
Bus load, R  
= 300 W, 33  
DTYCY24  
LOAD  
C
V
= 16.55 nF,  
= 24 V, T = 128 ms  
LOAD  
BATT  
T
Thermal shutdown, transmit duty cycle, at 20 V  
Bus load, R  
= 300 W, 45  
%
DTYCY20  
LOAD  
C
V
= 16.55 nF,  
= 20 V, T = 128 ms  
LOAD  
BATT  
Pins TX and /LB  
V
V
V
V
High level input voltage  
Low level input voltage, TX pin  
Low level input voltage, LB pin  
Input hysteresis  
6 V < V  
6 V < V  
< 24 V  
< 24 V  
t 24 V  
3
V
ih  
BATT  
0.9  
0.8  
V
ILTX  
ilB  
h
BATT  
6V t V  
V
BATT  
0.4  
V
C
TX input capacitance  
Intrinsic to part  
V = 5V  
5
pf  
µA  
µA  
TX  
I
ih2  
I
ih6  
TX high level input current  
/LB high level input current  
12  
4
50  
10  
i
V = 5V  
i
Pin RX  
V
Low level output voltage  
High level output leakage  
RX output current  
I = 1.6 mA  
0.4  
+10  
20  
V
ol  
o
I
ih  
I
rx  
V = 5V, BUS_IN = low  
o
–10  
4
µA  
mA  
V = 5V  
o
Pin BUS_OUT  
V
BUS_OUT in loop-back mode; TX high or low  
BUS_OUT voltage; passive  
/LB low or floating;  
0.1  
0.075  
8
V
V
V
olb  
0<V  
< 24V; R =1.6kΩ  
BATT  
L
V
ol  
TX low or floating;  
0<V < 24V; R =1.6kΩ  
BATT  
L
V
oh  
BUS_OUT voltage; active  
TX high; Note 2  
9V<V < 24V;  
7.3  
BATT  
300< R <1.6k;  
L
V
BUS_OUT voltage; low battery  
TX high;  
V
BATT  
– 1.7  
8
V
ohLOWB  
6V<V  
<9V;  
BATT  
300< R < 1.6k;  
L
Note 2  
– I  
– I  
BUS_OUT source current; bus positive  
BUS_OUT source current; bus negative  
TX high; 9V<V  
<24V  
<24V  
27  
28  
50  
55  
mA  
mA  
BO.LIM  
BATT  
0V< V  
<+6.0V  
bus  
TX high; 9V<V  
–17V< V  
BO.LIMn  
BATT  
< 0V  
bus  
6
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
–10  
TYP.  
MAX.  
UNIT  
µA  
– I  
BO.LK.HO  
BUS_OUT leakage current; TX high; bus low or  
operational  
–17 < V  
< 8.5 V;  
< 24 V  
I
BO.LIM  
BUS  
TX = high;  
0 V < V  
BATT  
– I  
BUS_OUT leakage current; TX high; bus positive  
BUS_OUT leakage current; TX low; bus positive  
8.5 V < V  
< 17 V;  
< 24 V  
–10  
–10  
10  
µA  
BO.LK.HH  
BUS  
TX = high;  
0 V < V  
BATT  
– I  
– I  
– I  
TX low; 0V<V  
<24V;  
BATT  
<+17V  
+10  
+100  
100  
20  
µA  
µA  
µA  
pF  
BO.LK  
0.1V< V  
bus  
BUS_OUT leakage current; TX low; bus negative TX low; 0.1V<V  
<24V; –10  
BATT  
BO.N  
–17V< V  
< 0V  
bus  
BUS_OUT leakage current with loss of ground  
Bus output capacitance  
–17 V < V  
< 17 V;  
–10  
BO.LOG  
BUS  
0 V <V  
< 1 V  
BATT  
C
BUSOUT  
Pin BUS_IN  
V
V
V
Input high voltage  
Input low voltage  
Input hysteresis  
Input bias current  
4.1  
V
ih  
3.65  
V
il  
100  
–5  
mV  
µA  
µA  
h
I
I
–17V < V  
< +17V  
+5  
BIN  
bus  
BUS_IN input current maximum with and without  
loss of ground  
–17 < V  
< 17 V;  
< 24 V;  
–100  
100  
BIN(MAX)  
BUS  
0 V < V  
BATT  
VTX high or low  
C
,
Bus input capacitance  
10  
20  
pF  
BUSIN  
T
,
Bus line to RX propagation delay, normal and 4X  
modes  
Measured at V  
0.4  
1.7  
ms  
DRXON  
BUSIN_HIGH  
to RX;  
t
or V  
DRXOFF  
BUSIN_LOW  
6 < V  
< 24 V; of  
BATT  
R
= 10 KW to 5 V  
LOAD  
7
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
DYNAMIC CHARACTERISTICS  
–40°C < T  
< +125°C; 9V < V  
< 16V; V > 3V; 0V <V  
< +8.5V;  
amb  
BATT  
/LB  
BUS  
R
= 56.2 kW; R = 10 kW; R = 15 kW; R = 10W; BUS_OUT: 300W < R < 1.6 kW;  
d f b L  
S
1.7 ms < (R * C ) < 5.2 ms; 2.2 nF < C < 16.55 nF; R : C < 40pF; unless otherwise specified.  
L
L
L
X
L
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Pins TX, RX, /LB  
t
Delay TX to RX rising and falling edge in  
loop-back mode  
/LB low  
6 V < V  
15  
1
24  
10  
µs  
pI  
< 24 V  
BATT  
t
Delay /LB to BUS_OUT  
TX high, toggle /LB  
µs  
dIb  
Pin BUS_OUT  
t
t
Delay TX to BUS_OUT, normal battery  
Delay TX to BUS_OUT, high battery  
Measured at 3.875V, Note 3  
Measured at 3.875V,  
13  
13  
21  
21  
µs  
µs  
bo  
bo_hibatt  
16V < V < 24V, Note 3  
BATT  
t
Delay TX to BUS_OUT, low battery  
Measured at 3.875V,  
6V < V < 9V, Note 3  
13  
11  
22  
18  
µs  
µs  
bo_lobatt  
BATT  
t , t  
r
BUS_OUT transition times, rise and fall, normal Measured between  
f
battery  
1.5 V and (V  
– 2.75 V),  
BATT  
9 < V  
< 16 V,  
BATT  
t tested at an additional bus load  
r
of R  
= 400 W and  
LOAD  
C
= 22000 pF  
LOAD  
t
t
,
,
BUS_OUT transition times, rise and fall, high  
battery  
Measured between  
1.5 V and 6.25 V,  
11  
18  
µs  
r_hibatt  
f_hibatt  
16 < V  
< 24 V,  
BATT  
t tested at an additional bus load  
r
of R  
= 400 W and  
LOAD  
C
= 22000 pF  
LOAD  
t
t
BUS_OUT transition times, rise and fall, low  
battery  
Measured between  
1.5 V and 6.25 V,  
(V  
BATT  
(V  
BATT  
µs  
r_lobatt  
f_lobatt  
– 4.25)  
– 4.25)  
6 < V  
< 9 V,  
/ 0.43  
/ 0.264  
BATT  
t tested at an additional bus load  
r
of R  
= 400 W and  
LOAD  
C
= 22000 pF  
LOAD  
I
Bus output current slew rate  
Bus emissions voltage output  
6V < V  
< 16V; R = 56.2 kW  
0.90  
2.4  
mA/µs  
sr  
BATT  
S
R = 100W; measured at 30% and  
L
70% of waveform, DC offset  
0 to –2V  
V
V
0 V < DC_offset < 1 V,  
9 V < V  
R = 500 W, C = 6 nF  
L
–50  
–50  
dBV  
dBV  
dB_limit  
< 24 V,  
BATT  
L
Bus emissions voltage output, negative bus  
offset  
–1 V < DC_offset < 0 V,  
9 V < V < 24 V,  
dB_limit–1  
BATT  
R = 500 W, C = 6 nF  
L
L
N
N
Bus noise rejection from battery  
Bus noise isolation from battery  
30 Hz < f < 250kHz  
20  
17  
dB  
dB  
R
I
250 kHz < f < 200 MHz  
8
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Pin BUS_IN  
C
Bus Input capacitance  
10  
20  
pF  
BIN  
T
;
Bus line to RX propagation delay, normal and  
4x modes  
Measured at V  
or  
BUSIN_HIGH  
0.4  
1.7  
µs  
DRXON  
t
V
to RX;  
DRXOFF  
BUSIN_LOW  
6 < V  
< 24 V; of  
BATT  
R
= 10 kW to 5V  
LOAD  
T
Bus line to RX propagation delay mismatch,  
normal and 4x modes  
t
–t  
–1.3  
1
+1.3  
4
µs  
DRX_  
DRXOFF DRXON  
Pin BATT  
t
time-out to low power state  
TX low  
ms  
low_power  
NOTES;  
1. TX < 0.9V for more than 4 ms  
2. For 6V < V < 9V the bus output voltage is limited by the supply voltage.  
BATT  
For 16V < V  
< 24V (jump start) the load is limited by the package power dissipation  
BATT  
ratings; the duration of this condition is recommended to be less than 90 seconds.  
3. Tested with a bus load of R = 400 W and C = 22,000 pF.  
LOAD  
LOAD  
9
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
APPLICATION INFORMATION  
SAEJ1850 LINK CONTROLLER  
VPWO  
VPWI  
R
d
+5V  
10NF  
10k  
C
s
2)  
R , 56.2 kW, 1%  
s
TX  
R/F  
RX  
/LB  
+12V  
BATT  
AU5780A  
TRANSCEIVER  
GND  
BUS_IN  
BUS_OUT  
15k  
10W  
NOTE 1  
R
R
L
f
C
L
SAE/J1850 VPW BUS LINE  
SL01209  
NOTES:  
1. Value depends, e.g., on type of bus node. Example: primary node R =1.5kW , secondary node R =10.7kW.  
L
L
2. For connection of /LB there are different options, e.g., connect to V or to low-active reset or to a port pin.  
CC  
3. The value of C is suggested to be in the range 330 pF < C < 470 pF.  
L
L
10  
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
SO8: plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
11  
2001 Jun 19  
Philips Semiconductors  
Product data  
SAE/J1850/VPW transceiver  
AU5780A  
Data sheet status  
Product  
status  
Definitions  
[1]  
Data sheet status  
[2]  
Objective data  
Development  
This data sheet contains data from the objective specification for product development.  
Philips Semiconductors reserves the right to change the specification in any manner without notice.  
Preliminary data  
Product data  
Qualification  
Production  
This data sheet contains data from the preliminary specification. Supplementary data will be  
published at a later date. Philips Semiconductors reserves the right to change the specification  
without notice, in order to improve the design and supply the best possible product.  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply.  
Changes will be communicated according to the Customer Product/Process Change Notification  
(CPCN) procedure SNW-SQ-650A.  
[1] Please consult the most recently issued datasheet before initiating or completing a design.  
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on  
the Internet at URL http://www.semiconductors.philips.com.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
RighttomakechangesPhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 2001  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Date of release: 06-01  
Document order number:  
9397 750 08501  
Philips  
Semiconductors  

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