NTE65 [NTE]
Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV; 硅NPN晶体管高电压，低噪声的有线电视，美亚
| 型号： | NTE65 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE65
Silicon NPN Transistor
High Voltage, Low Noise for CATV, MATV
Description:
The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal
amplifier and also used in applications requiring fast switching times.
Features:
D High Current–Gain Bandwidth Product
D Low Noise Figure
D High Power Gain
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TA = +60°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mW
Derate Above 60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thremal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
I = 1mA, I = 0
15
20
3
–
–
–
–
–
–
V
V
(BR)CEO
(BR)CBO
(BR)EBO
C
B
V
V
I = 0.1mA, I = 0
C E
I = 0.1mA, I = 0
–
V
E
C
I
V
CB
= 10V, I = 0
–
50
nA
CBO
E
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I = 14mA
25
–
250
C
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Dynamic Characteristics
Current–Gain Bandwidth Product
Collector–Base Capacitance
Functional Tests
Symbol
Test Conditions
Min Typ Max Unit
f
T
V
V
= 10V, I = 14mA, f = 0.5GHz
–
–
5.0
–
GHz
pF
CE
C
C
cb
= 10V, I = 0, f = 1MHz
E
0.5 1.0
CB
Noise Figure
NF
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
= 10V, I = 2mA, f = 0.5GHz
–
–
–
–
–
–
2.4
3.0
15
10
18
12
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
C
= 10V, I = 2mA, f = 1.0GHz
C
Power Gain at Optimum Noise Figure
G
NF
= 10V, I = 2mA, f = 0.5GHz
C
= 10V, I = 2mA, f = 1.0GHz
C
G
max
= 10V, I = 2mA, f = 0.5GHz
Maximum Available Power Gain
(Note 1)
C
= 10V, I = 2mA, f = 1.0GHz
C
|S21|2
(I – |S11|2) (I – |S22|2)
Gmax
=
Note 1.
.205 (5.2) Dia Max
.039 (1.0)
.005 (0.15)
.098 (2.5)
Emitter
.197
(5.0)
.147
(3.75)
Max
Collector
.354 (9.0)
Base
.197 5.0)
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