DS90LV011AHMF [NSC]
HIGH TEMPERATURE 3V LVDS DIFFERENTIAL DRIVER; 高温3V LVDS差分驱动器
| 型号： | DS90LV011AHMF |
| 厂家： | 
National Semiconductor |
| 描述： | HIGH TEMPERATURE 3V LVDS DIFFERENTIAL DRIVER |
| 文件： | 总5页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2005
DS90LV011AH
High Temperature 3V LVDS Differential Driver
General Description
Features
n
-40˚C to 125˚C operating temperature range
The DS90LV011AH is an LVDS driver optimized for high
data rate and low power applications. The DS90LV011AH is
a current mode driver allowing power dissipation to remain
low even at high frequency. In addition, the short circuit fault
current is also minimized. The device is designed to support
data rates in excess of 400Mbps (200MHz) utilizing Low
Voltage Differential Signaling (LVDS) technology.
n Conforms to TIA/EIA-644-A Standard
>
n
400Mbps (200MHz) switching rates
n 700 ps (100 ps typical) maximum differential skew
n 1.5 ns maximum propagation delay
n Single 3.3V power supply
n
350 mV differential signaling
The device is offered in a 5-lead small outline transistor
package. The LVDS outputs have been arranged for easy
PCB layout. The differential driver outputs provide low EMI
with its typical low output swing of 350 mV. The
DS90LV011AH can be paired with its companion single line
receiver, the DS90LT012AH, or with any of National’s LVDS
receivers, to provide a high-speed LVDS interface.
n Power Off Protection (outputs in TRI-STATE)
n Pinout simplifies PCB layout
@
n Low power dissipation (23 mW 3.3V typical)
n SOT-23 5-lead package
n Pin compatible with SN65LVDS1
Connection Diagram
20161522
(Top View)
Order Number DS90LV011AHMF
See NS Package Number MF05A
Functional Diagram
20161502
© 2005 National Semiconductor Corporation
DS201615
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Absolute Maximum Ratings (Note 1)
Maximum Junction
Temperature
+150˚C
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Ratings
HBM (1.5 kΩ, 100 pF)
EIAJ (0 Ω, 200 pF)
CDM (0 Ω, 0 pF)
IEC direct (330 Ω, 150 pF)
≥ 9kV
≥ 900V
≥ 2000V
≥ 4kV
Supply Voltage (VDD
)
−0.3V to +4V
−0.3V to +3.6V
−0.3V to +3.9V
24mA
LVCMOS input voltage (TTL IN)
LVDS output voltage (OUT )
LVDS output short circuit current
@
Maximum Package Power Dissipation +25˚C
Recommended Operating
Conditions
MF Package
902 mW
Derate MF Package
Thermal resistance (θJA
Storage Temperature
7.22 mW/˚C above +25˚C
138.5˚C/Watt
Min
Typ
Max
Units
V
)
Supply Voltage (VDD
)
3.0
3.3
3.6
−65˚C to +150˚C
Temperature (TA)
−40
+25 +125
˚C
Lead Temperature Range Soldering
(4 sec.)
+260˚C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3, 8)
Symbol
|VOD
Parameter
Output Differential Voltage
VOD Magnitude Change
Offset Voltage
Conditions
Pin
Min
Typ
350
3
Max
Units
|
RL = 100Ω
OUT+,
OUT−
250
450
35
mV
mV
V
(Figure 1 and Figure 2)
∆VOD
VOS
RL = 100Ω
(Figure 1)
1.125
0
1.22
1
1.375
25
∆VOS
IOFF
IOS
Offset Magnitude Change
Power-off Leakage
Output Short Circuit Current
(Note 4)
mV
µA
mA
VOUT = 3.6V or GND, VDD = 0V
VOUT+ and VOUT− = 0V
1
10
−6
−24
IOSD
Differential Output Short Circuit
Current (Note 4)
VOD = 0V
−5
3
−12
mA
COUT
VIH
VIL
Output Capacitance
Input High Voltage
pF
V
TTL IN
2.0
VDD
0.8
10
Input Low Voltage
GND
V
IIH
Input High Current
VIN = 3.3V or 2.4V
VIN = GND or 0.5V
ICL = −18 mA
2
1
µA
µA
V
IIL
Input Low Current
10
VCL
CIN
IDD
Input Clamp Voltage
Input Capacitance
−1.5
−0.6
3
pF
mA
mA
Power Supply Current
No Load
VIN = VDD or GND
VDD
5
8
RL = 100Ω
7
10
Switching Characteristics
Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (Notes 3, 5, 6, 7)
Symbol
tPHLD
tPLHD
tSKD1
tSKD3
tSKD4
tTLH
Parameter
Conditions
Min
0.3
0.3
0
Typ
1.0
1.1
0.1
0.2
0.4
0.5
0.5
250
Max
1.5
1.5
0.7
1.0
1.2
1.0
1.0
Units
ns
Differential Propagation Delay High to Low
Differential Propagation Delay Low to High
Differential Pulse Skew |tPHLD − tPLHD| (Note 9)
Differential Part to Part Skew (Note 10)
Differential Part to Part Skew (Note 11)
Transition Low to High Time
RL = 100Ω, CL = 15 pF
(Figure 3 and Figure 4)
ns
ns
0
ns
0
ns
0.2
0.2
200
ns
tTHL
Transition High to Low Time
ns
fMAX
Maximum Operating Frequency (Note 12)
MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V
.
OD
Note 3: All typicals are given for: V
= +3.3V and T = +25˚C.
A
DD
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2
Switching Characteristics (Continued)
Note 4: Output short circuit current (I ) is specified as magnitude only, minus sign indicates direction only.
OS
Note 5: These parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over PVT (process, voltage,
temperature) ranges.
Note 6: C includes probe and fixture capacitance.
L
Note 7: Generator waveform for all tests unless otherwise specified: f = 1 MHz, Z = 50Ω, t ≤ 1 ns, t ≤ 1 ns (10%-90%).
O
r
f
Note 8: The DS90LV011AH is a current mode device and only function with datasheet specification when a resistive load is applied to the drivers outputs.
Note 9: t , |t − t |, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of
SKD1 PHLD
PLHD
the same channel.
Note 10: t , Differential Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This
SKD3
specification applies to devices at the same V
and within 5˚C of each other within the operating temperature range.
DD
Note 11: t , part to part skew, is the differential channel to channel skew of any event between devices. This specification applies to devices over recommended
SKD4
operating temperature and voltage ranges, and across process distribution. t
is defined as |Max − Min| differential propagation delay.
SKD4
<
>
Note 12: f
generator input conditions: t = t
1 ns (0% to 100%), 50% duty cycle, 0V to 3V. Output criteria: duty cycle = 45%/55%, V
250mV. The
and t ).
MAX
r
f
OD
TLH
parameter is guaranteed by design. The limit is based on the statistical analysis of the device over the PVT range by the transitions times (t
THL
Parameter Measurement Information
20161503
FIGURE 1. Differential Driver DC Test Circuit
20161524
FIGURE 2. Differential Driver Full Load DC Test Circuit
20161504
FIGURE 3. Differential Driver Propagation Delay and Transition Time Test Circuit
3
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Parameter Measurement Information (Continued)
20161505
FIGURE 4. Differential Driver Propagation Delay and Transition Time Waveforms
Application Information
TABLE 1. Device Pin Descriptions
Pin Name
Package Pin Number
Description
SOT23
5
4
3
2
1
TTL IN
OUT+
OUT−
GND
VDD
LVTTL/LVCMOS driver input pins
Non-inverting driver output pin
Inverting driver output pin
Ground pin
Power supply pin, +3.3V 0.3V
No connect
NC
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4
Physical Dimensions inches (millimeters) unless otherwise noted
5-Lead SOT23, JEDEC MO-178, 1.6mm
Order Number DS90LV011AHMF
NS Package Number MF05A
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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in a significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
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相关型号：
DS90LV011AHMF/NOPB
IC LINE DRIVER, PDSO5, 1.60 MM, GREEN, MO-178, SOT-23, 5 PIN, Line Driver or Receiver
NSC
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