UPC3225TB-E3-A [NEC]
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER; 5 V ，硅锗MMIC中等输出功率放大器
| 型号： | UPC3225TB-E3-A |
| 厂家： | 
NEC |
| 描述： | 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER |
| 文件： | 总17页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC3225TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS
tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
•
•
•
Wideband response
Low current
: fu = 2.8 GHz TYP. @ 3 dB bandwidth
: ICC = 24.5 mA TYP.
Medium output power
: PO (sat) = +15.5 dBm TYP. @ f = 0.95GHz
: PO (sat) = +12.5 dBm TYP. @ f = 2.15 GHz
: PO (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz
: PO (1dB) = +7.0 dBm TYP. @ f = 2.15 GHz
: GP = 32.5 dB TYP. @ f = 0.95 GHz
: GP = 33.5 dB TYP. @ f = 2.15 GHz
: NF = 3.7 dB TYP. @ f = 0.95 GHz
: NF = 3.7 dB TYP. @ f = 2.15 GHz
: VCC = 4.5 to 5.5 V
•
•
•
High linearity
Power gain
Noise Figure
•
•
Supply voltage
Port impedance
: input/output 50 Ω
APPLICATIONS
•
IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
C3M
Supplying Form
Embossed tape 8 mm wide.
µPC3225TB-E3
µPC3225TB-E3-A 6-pin super minimold
(Pb-Free)Note
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, please contact your nearby sales office
Part number for sample order: µPC3225TB.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10500EJ01V0DS (1st edition)
Date Published December 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
µPC3225TB
PIN CONNECTIONS
Pin No.
Pin Name
OUTPUT
GND
(Top View)
(Bottom View)
1
2
3
4
5
6
3
2
1
4
5
6
4
5
6
3
2
1
VCC
INPUT
GND
GND
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
fu
PO (sat)
GP
NF
ICC
Part No.
Package
Marking
(GHz)
(dBm)
(dB)
(dB)
(mA)
µPC2708TB
µPC2709TB
µPC2710TB
µPC2776TB
µPC3223TB
µPC3225TB
2.9
2.3
1.0
2.7
3.2
2.8
+10.0
+11.5
+13.5
+8.5
15
23
6.5
5.0
26
25
6-pin super minimold
C1D
C1E
C1F
C2L
C3J
C3M
33
3.5
22
23
6.0
25
+12.0
+15.5 Note
23
4.5
19
32.5 Note
3.7 Note
24.5
Note f = 0.95 GHz
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
2
Data Sheet PU10500EJ01V0DS
µPC3225TB
PIN EXPLANATION
Applied
Voltage
(V)
Pin
Pin
No.
Pin
Function and Applications
Voltage
(V)Note
Name
4
1
3
INPUT
−
0.98
Signal input pin.
A internal matching circuit, configured with resistors, enables 50 Ω
connection over a wide band.
A multi-feedback circuit is designed to cancel the deviations of hFE and
resistance.
This pin must be coupled to signal source with capacitor for DC cut.
OUTPUT
Voltage
as same
as VCC
−
Signal output pin.
The inductor must be attached between VCC and output pins to supply
current to the internal output transistors.
through
external
inductor
VCC
4.5 to 5.5
−
−
Power supply pin.
Which biases the internal input transistor.
This pin should be externally equipped with bypass capacitor to
minimize its impedance.
2
5
6
GND
0
Ground pin.
This pin should be connected to system ground with minimum
inductance. Ground pattern on the board should be formed as wide as
possible.
All the ground pins must be connected together with wide ground
pattern to decrease impedance defference.
Note Pin voltage is measured at VCC = 5.0 V
3
Data Sheet PU10500EJ01V0DS
µPC3225TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Symbol
Conditions
TA = +25°C, Pin 1 and 3
TA = +25°C
Ratings
Unit
V
VCC
ICC
PD
6
Total Circuit Current
Power Dissipation
45
270
mA
mW
°C
TA = +85°C
Note
Operating Ambient Temperature
Storage Temperature
Input Power
TA
−40 to +85
−55 to +150
0
Tstg
Pin
°C
TA = +25°C
dBm
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Symbol
Conditions
MIN.
4.5
TYP.
5.0
MAX.
Unit
V
VCC
The same voltage should be applied
to pin 1 and 3.
5.5
Operating Ambient Temperature
TA
−40
+25
+85
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Circuit Current
Symbol
ICC
Test Conditions
No input signal
MIN.
20.0
30.0
30.5
+13.5
+10.5
+7.0
+5.0
−
TYP.
24.5
32.5
33.5
+15.5
+12.5
+9.0
+7.0
3.7
MAX.
31.0
35.0
36.0
−
Unit
mA
dB
Power Gain
GP
f = 0.95 GHz, Pin = −35.0 dBm
f = 2.15 GHz, Pin = −35.0 dBm
f = 0.95 GHz, Pin = －5.0 dBm
Saturated Output Power
PO (sat)
dBm
dBm
dB
f = 2.15 GHz, Pin = －5.0 dBm
−
Gain 1 dB Compression Output Power PO (1 dB)
f = 0.95 GHz
f = 2.15 GHz
f = 0.95 GHz
f = 2.15 GHz
−
−
Noise Figure
NF
4.5
4.5
−
−
3.7
Upper Limit Operating Frequency
Isolation
fu
3 dB down below flat gain at f = 0.95
GHz
−
2.8
GHz
dB
ISL
f = 0.95 GHz, Pin = −35.0 dBm
f = 2.15 GHz, Pin = −35.0 dBm
f = 0.95 GHz, Pin = −35.0 dBm
f = 2.15 GHz, Pin = −35.0 dBm
f = 0.95 GHz, Pin = −35.0 dBm
f = 2.15 GHz, Pin = −35.0 dBm
f = 0.95 to 2.15 GHz
36.0
36.0
7.0
8.0
7.0
9.5
−
41.0
45.0
8.5
−
−
Input Return Loss
Output Return Loss
Gain Flatness
RLin
RLout
∆GP
−
dB
dB
dB
11.0
10.5
13.0
2.5
−
−
−
4.0
4
Data Sheet PU10500EJ01V0DS
µPC3225TB
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Output intercept point
Symbol
OIP3
Test Conditions
f = 0.95 GHz
Reference Value
Unit
21.0
16.0
dBm
f = 2.15 GHz
5
Data Sheet PU10500EJ01V0DS
µPC3225TB
TEST CIRCUIT
C2
6
1
100 pF
GND
OUT
L1
15 nH
50 Ω
5
2
C4
1 000 pF
GND
GND
C1
330 pF
4
3
IN
V
CC
C3
1 000 pF
V
CC
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Value
330 pF
100 pF
1 000 pF
1 000 pF
15 nH
Maker
Murata
Murata
Murata
Murata
Susumu
Type code
GMR36CH
GMR36CH
GMR39CH
GMR36B
C1
C2
C3
C4
L1
TFL0816
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 24.5 mA, to output medium power. To supply current for output
transistor, connect an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin. Capacitors of 330 pF for the
input pin and 100 pF for the output pin are recommendable as the coupling capacitors.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
6
Data Sheet PU10500EJ01V0DS
µPC3225TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
6
5
4
C1
C2
1
2
3
C3
COMPONENT LIST
Notes
Value
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
C1
330 pF
100 pF
1 000 pF
15 nH
C2
3. Solder plated on pattern
C3, C4
L1
4.
: Through holes
7
Data Sheet PU10500EJ01V0DS
µPC3225TB
TYPICAL CHARACTERISTICS (VCC = 5.0 V, TA = +25°C, unless otherwise specified)
CIRCUIT CURRENT
CIRCUIT CURRENT vs. OPERATING
vs. SUPPLY VOLTAGE
AMBIENT TEMPERATURE
35
30
25
20
15
10
5
26.0
25.5
25.5
24.5
24.5
23.5
23.0
22.5
VCC = 5.0 V
VCC = 5.0 V
TA = −40°C
+25°C
+85°C
0
1
2
3
4
5
6
7
−60 −40 −20
0
20
40
60
80 100
Supply Voltage VCC (V)
Operating Ambient Temperature TA (°C)
POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY
36
34
32
30
28
26
36
34
32
30
28
26
TA = −40°C
VCC = 4.5 V
VCC = 5.0 V
+25°C
+85°C
5.0 V
5.5 V
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
Frequency f (GHz)
Frequency f (GHz)
ISOLATION vs. FREQUENCY
ISOLATION vs. FREQUENCY
−15
−25
−35
−45
−55
−65
−15
−25
−35
−45
−55
−65
TA = −40°C
VCC = 5.0 V
+25°C
+85°C
VCC = 4.5 V
5.0 V
5.5 V
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
8
Data Sheet PU10500EJ01V0DS
µPC3225TB
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
0
TA
= −40°C
+25°C
V
CC = 4.5 V
VCC = 5.0 V
5.0 V
+85°C
5.5 V
−4
−8
−4
−8
−12
−16
−20
−12
−16
−20
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
Frequency f (GHz)
Frequency f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
−4
−4
V
CC = 4.5 V
TA
= −40°C
+25°C
5.0 V
5.5 V
+85°C
−8
−12
−16
−20
−24
−8
−12
−16
−20
−24
V
CC = 5.0 V
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
Frequency f (GHz)
Frequency f (GHz)
POWER GAIN vs. INPUT POWER
POWER GAIN vs. INPUT POWER
36
35
34
33
32
31
30
29
28
27
38
37
36
35
34
33
32
31
30
29
V
CC = 4.5 V
V
CC = 4.5 V
f = 950 MHz
f = 1 500 MHz
5.0 V
5.0 V
5.5 V
5.5 V
26
28
−35
−20
Input Power Pin (dBm)
−10
−35
−20
Input Power Pin (dBm)
−10
−40
−30 −25
−15
−5
−40
−30 −25
−15
−5
Remark The graphs indicate nominal characteristics.
9
Data Sheet PU10500EJ01V0DS
µPC3225TB
POWER GAIN vs. FREQUENCY
OUTPUT POWER vs. INPUT POWER
36
35
34
33
32
31
30
29
28
27
18
12
6
V
CC = 4.5 V
V
CC = 5.0 V
5.0 V
5.5 V
0
−6
−12
f = 950 MHz
1 500 MHz
2 150 MHz
f = 2 150 MHz
26
−35
−20
−10
−40
−30 −25
−15
−5
−45
−35
−25
−15
−5
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
18
16
14
12
10
8
18
16
14
12
10
8
f = 950 MHz
f = 950 MHz
6
6
4
4
2
2
0
0
−2
−4
−6
−8
−2
−4
−6
−8
T
A
= −40°C
+25°C
V
CC = 4.5 V
5.0 V
+85°C
5.5 V
−35
−20
Input Power Pin (dBm)
−10
−40 −35 −30 −25 −20 −15 −10
−5
−40
−30 −25
−15
−5
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
18
16
14
12
10
8
18
16
14
12
10
8
f = 1 500 MHz
f = 1 500 MHz
6
6
4
4
2
2
0
0
−2
−4
−6
−8
−2
−4
−6
−8
T
A
= −40°C
+25°C
V
CC = 4.5 V
5.0 V
+85°C
5.5 V
−35
−20
Input Power Pin (dBm)
−10
−40
−30 −25
−15
−5
−40 −35 −30 −25 −20 −15 −10
−5
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
10
Data Sheet PU10500EJ01V0DS
µPC3225TB
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
18
16
14
12
10
8
18
16
14
12
10
8
f = 2 150 MHz
f = 2 150 MHz
6
6
4
4
2
2
0
0
−2
−4
−6
−8
−2
−4
−6
−8
T
A
= −40°C
+25°C
V
CC = 4.5 V
5.0 V
+85°C
5.5 V
−40 −35 −30 −25 −20 −15 −10
−5
−35
−20
Input Power Pin (dBm)
−10
−40
−30 −25
−15
−5
Input Power Pin (dBm)
OUTPUT POWER (2 TONES)
vs. INPUT POWER
20
10
V
CC = 5.0 V,
∆
f = 1 MHz
: OIP
f = 950/951 MHz
3
3
3
= 21.0 dBm
= 18.2 dBm
= 16.0 dBm
f = 1 500/1 501 MHz : OIP
f = 2 150/2 151 MHz : OIP
0
−10
−20
−30
−40
−50
−60
f = 950 MHz
1 500 MHz
2 150 MHz
−40
−25
−15
−45
−35 −30
−20
−10
Input Power Pin/tone (dBm)
OUTPUT POWER (2 TONES)
vs. INPUT POWER
OUTPUT POWER (2 TONES)
vs. INPUT POWER
20
10
20
10
f = 950/951 MHz
f = 950/951 MHz
0
0
−10
−20
−30
−40
−50
−60
−10
−20
−30
−40
−50
−60
V
CC = 4.5 V
T
A
= −40°C
5.0 V
+25°C
+85°C
5.5 V
−10 −5
−40
−25
−15
−40
−25
−15
−45
−35 −30
−20
−45
−35 −30
−20
−10 −5
Input Power Pin/tone (dBm)
Input Power Pin/tone (dBm)
Remark The graphs indicate nominal characteristics.
11
Data Sheet PU10500EJ01V0DS
µPC3225TB
OUTPUT POWER (2 TONES)
vs. INPUT POWER
OUTPUT POWER (2 TONES)
vs. INPUT POWER
20
10
20
10
f = 1 500/1 501 MHz
f = 1 500/1 501 MHz
0
0
−10
−20
−30
−40
−50
−60
−10
−20
−30
−40
−50
−60
V
CC = 4.5 V
T
A
= −40°C
+25°C
5.0 V
5.5 V
+85°C
−40
−25
−15
−40
−25
−15
−45
−35 −30
−20
−10 −5
−45
−35 −30
−20
−10 −5
Input Power Pin/tone (dBm)
Input Power Pin/tone (dBm)
OUTPUT POWER (2 TONES)
vs. INPUT POWER
OUTPUT POWER (2 TONES)
vs. INPUT POWER
20
10
20
10
f = 2 150/2 151 MHz
f = 2 150/2 151 MHz
0
0
−10
−20
−30
−40
−50
−60
−10
−20
−30
−40
−50
−60
V
CC = 4.5 V
T
A
= −40°C
+25°C
5.0 V
5.5 V
+85°C
−40
−25
−15
−10 −5
−45
−35 −30
−20
−40
−25
−15
−45
−35 −30
−20
−10 −5
Input Power Pin/tone (dBm)
Input Power Pin/tone (dBm)
NOISE FIGURE vs. FREQUENCY
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
V
CC = 4.5 V
5.0 V
5.5 V
0
500
1 000
1 500
2 000
2 500
3 000
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
12
Data Sheet PU10500EJ01V0DS
µPC3225TB
S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V)
S11−FREQUENCY
START: 100.000 000 MHz
STOP : 3 000.000 000 MHz
1
3
2
1 : 950 MHz
100.41 Ω −31.537 Ω 5.3124 pF
2 : 1 600 MHz 58.686 Ω −47.725 Ω 2.0843 pF
3 : 2 150 MHz 39.938 Ω −24.401 Ω 3.0338 pF
S22−FREQUENCY
START: 100.000 000 MHz
STOP : 3 000.000 000 MHz
1
2
3
1 : 950 MHz
60.637 Ω 32.730 Ω
5.4835 nH
2 : 1 600 MHz 70.195 Ω −20.405 Ω 4.8754 pF
3 : 2 150 MHz 44.370 Ω −14.407 Ω 5.1383 pF
13
Data Sheet PU10500EJ01V0DS
µPC3225TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1 0.1
1.25 0.1
0.1 MIN.
14
Data Sheet PU10500EJ01V0DS
µPC3225TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC pin.
(4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Condition Symbol
IR260
Peak temperature (package surface temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Wave Soldering
Partial Heating
Peak temperature (molten solder temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
WS260
HS350
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
Soldering time (per side of device)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
Maximum chlorine content of rosin flux (% mass)
Caution Do not use different soldering methods together (except for partial heating).
15
Data Sheet PU10500EJ01V0DS
µPC3225TB
•
The information in this document is current as of December, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
16
Data Sheet PU10500EJ01V0DS
µPC3225TB
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0406
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