UPC3226TB-E3 [NEC]
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER; 5 V ，硅锗MMIC中等输出功率放大器
| 型号： | UPC3226TB-E3 |
| 厂家： | 
NEC |
| 描述： | 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER |
| 文件： | 总14页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC3226TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
•
•
Low current
: ICC = 15.5 mA TYP. @ VCC = 5.0 V
: PO (sat) = +13.0 dBm TYP. @ f = 1.0 GHz
: PO (sat) = +9.0 dBm TYP. @ f = 2.2 GHz
: PO (1dB) = +7.5 dBm TYP. @ f = 1.0 GHz
: PO (1dB) = +5.7 dBm TYP. @ f = 2.2 GHz
: GP = 25.0 dB TYP. @ f = 1.0 GHz
: GP = 26.0 dB TYP. @ f = 2.2 GHz
: NF = 5.3 dB TYP. @ f = 1.0 GHz
: NF = 4.9 dB TYP. @ f = 2.2 GHz
: VCC = 4.5 to 5.5 V
Medium output power
•
•
•
High linearity
Power gain
Noise Figure
•
•
Supply voltage
Port impedance
: input/output 50 Ω
APPLICATIONS
•
IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
C3N
Supplying Form
Embossed tape 8 mm wide.
µPC3226TB-E3
µPC3226TB-E3-A 6-pin super minimold
(Pb-Free)Note
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, please contact your nearby sales office
Part number for sample order: µPC3226TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10558EJ01V0DS (1st edition)
Date Published May 2005 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2005
µPC3226TB
PIN CONNECTIONS
Pin No.
Pin Name
INPUT
GND
(Top View)
(Top View)
(Bottom View)
1
2
3
4
5
6
3
2
1
4 3
5 2
6 1
4 4
5 5
6 6
3
2
1
GND
OUTPUT
GND
VCC
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
fu
PO (sat)
GP
NF
ICC
Part No.
Package
Marking
(GHz)
(dBm)
(dB)
(dB)
(mA)
µPC2708TB
µPC2709TB
µPC2710TB
µPC2776TB
µPC3223TB
µPC3225TB
µPC3226TB
2.9
2.3
1.0
2.7
3.2
2.8
3.2
+10.0
+11.5
+13.5
+8.5
15
23
6.5
5.0
26
25
6-pin super minimold
C1D
C1E
C1F
C2L
C3J
C3M
C3N
33
3.5
22
23
6.0
25
+12.0
+15.5 Note
+13.0
23
4.5
19
32.5 Note
3.7 Note
24.5
15.5
25
5.3
Note µPC3225TB is f = 0.95 GHz
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
2
Data Sheet PU10558EJ01V0DS
µPC3226TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Symbol
Conditions
Ratings
6.0
Unit
V
VCC
ICC
PD
TA = +25°C
TA = +25°C
TA = +85°C
Total Circuit Current
Power Dissipation
40
mA
mW
°C
Note
270
Operating Ambient Temperature
Storage Temperature
Input Power
TA
−40 to +85
−55 to +150
+10
Tstg
Pin
°C
TA = +25°C
dBm
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
VCC
Conditions
MIN.
4.5
TYP.
5.0
MAX.
Unit
V
5.5
TA
−40
+25
+85
°C
3
Data Sheet PU10558EJ01V0DS
µPC3226TB
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Circuit Current
Symbol
ICC
Test Conditions
No input signal
MIN.
12.5
22.0
23.0
23.0
23.0
22.5
22.0
+10.0
+6.0
+5.0
+3.0
−
TYP.
15.5
24.0
25.0
26.0
26.0
25.5
25.0
+13.0
+9.0
+7.5
+5.7
5.3
MAX.
Unit
mA
dB
19.5
26.0
27.5
29.0
29.0
29.0
28.5
−
Power Gain 1
GP1
f = 0.1 GHz, Pin = −30 dBm
f = 1.0 GHz, Pin = −30 dBm
f = 1.8 GHz, Pin = −30 dBm
f = 2.2 GHz, Pin = −30 dBm
f = 2.6 GHz, Pin = −30 dBm
f = 3.0 GHz, Pin = −30 dBm
f = 1.0 GHz, Pin = −2 dBm
f = 2.2 GHz, Pin = −8 dBm
Power Gain 2
GP2
Power Gain 3
GP3
Power Gain 4
GP4
Power Gain 5
GP5
Power Gain 6
GP6
Saturated Output Power 1
Saturated Output Power 2
PO (sat) 1
PO (sat) 2
dBm
dBm
dB
−
Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz
Gain 1 dB Compression Output Power 2 PO (1 dB) 2 f = 2.2 GHz
−
−
Noise Figure 1
NF1
NF2
f = 1.0 GHz
6.0
6.0
−
Noise Figure 2
f = 2.2 GHz
−
4.9
Isolation 1
ISL1
f = 1.0 GHz, Pin = −30 dBm
f = 2.2 GHz, Pin = −30 dBm
f = 1.0 GHz, Pin = −30 dBm
f = 2.2 GHz, Pin = −30 dBm
f = 1.0 GHz, Pin = −30 dBm
f = 2.2 GHz, Pin = −30 dBm
31
34
dB
Isolation 2
ISL2
33
36
−
Input Return Loss 1
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Input 3rd Order Distortion Intercept Point 1
RLin1
RLin2
RLout1
RLout2
IIP31
10.0
9.0
14.0
13.0
13.0
13.0
−5.0
−
dB
−
10.0
10.0
−
−
dB
−
f1 = 1 000 MHz, f2 = 1 001 MHz,
−
dBm
Pin = −30 dBm
Input 3rd Order Distortion Intercept Point 2
Output 3rd Order Distortion Intercept Point 1
Output 3rd Order Distortion Intercept Point 2
2nd Order Intermodulation Distortion
IIP32
OIP31
OIP32
IM2
f1 = 2 200 MHz, f2 = 2 201 MHz,
−
−
−
−
−11.0
+20.0
+15.0
43.0
−
−
−
−
Pin = −30 dBm
f1 = 1 000 MHz, f2 = 1 001 MHz,
dBm
dBc
Pin = −30 dBm
f1 = 2 200 MHz, f2 = 2 201 MHz,
Pin = −30 dBm
f1 = 1 000 MHz, f2 = 1 001 MHz,
Pin = −30 dBm
K factor 1
K factor 2
K1
K2
f = 1.0 GHz
f = 2.2 GHz
−
−
1.4
1.6
−
−
−
−
4
Data Sheet PU10558EJ01V0DS
µPC3226TB
TEST CIRCUIT
V
CC
C4
1 000 pF
1 000 pF
C3
L
4
100 nH
6
50 Ω
IN
50 Ω
C1
C2
1
OUT
100 pF
100 pF
2, 3, 5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Type
Value
100 pF
C1, C2
C3
Chip Capacitor
Chip Capacitor
Feed-through Capacitor
Chip Inductor
1 000 pF
1 000 pF
100 nH
C4
L
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect
an inductor between the VCC pin (pin 6) and output pin (pin 4). Select inductance, as the value listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for
the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
5
Data Sheet PU10558EJ01V0DS
µPC3226TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
IN
C1
C2
OUT
L
C3
C4
COMPONENT LIST
Notes
Value
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
C1, C2
C3, C4
L1
100 pF
1 000 pF
100 nH
3. Solder plated on pattern
4.
: Through holes
6
Data Sheet PU10558EJ01V0DS
µPC3226TB
TYPICAL CHARACTERISTICS (T
A
= +25
°
C, VCC = Vout = 5.0 V, Z
S
= Z = 50 Ω, unless otherwise specified)
L
CURCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
25
18
No Input Signal
17
16
15
14
13
12
20
TA = +85°C
15
10
+25°C
5
–40°C
0
1
2
3
4
5
6
–50
–25
0
25
50
75
100
Supply Voltage VCC (V)
Operating Ambient Temperature TA (°C)
POWER GAIN vs. FREQUENCY
ISOLATION vs. FREQUENCY
30
25
20
15
10
5
0
–10
–20
–30
–40
–50
–60
VCC = 5.5 V
5.0 V
4.5 V
VCC = 4.5 V
5.0 V
5.5 V
0
0.1
0.3
0.5
1.0
2.0 3.0
0.1
0.3
0.5
1.0
2.0 3.0
Frequency f (GHz)
Frequency f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
0
–5
–5
VCC = 4.5 V
–10
–10
–15
–20
–25
–30
VCC = 4.5 V
–15
–20
–25
–30
5.0 V
1.0
5.5 V
5.0 V
5.5 V
2.0 3.0
0.1
0.3
0.5
1.0
0.1
0.3
0.5
2.0 3.0
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10558EJ01V0DS
µPC3226TB
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+20
+15
+10
+5
+20
+15
+10
+5
f = 1.0 GHz
f = 2.2 GHz
CC = 5.5 V
V
VCC = 5.5 V
5.0 V
0
0
5.0 V
4.5 V
–5
–5
4.5 V
–10
–15
–20
–10
–15
–20
–30
0
Input Power Pin (dBm)
–40
–20
–10
+10
+20
–30
–10
Input Power Pin (dBm)
–40
–20
0
+10
NOISE FIGURE vs. FREQUENCY
NOISE FIGURE vs. FREQUENCY
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
V
CC = 4.5 V
T
A
= +85°C
5.0 V
+25°C
5.5 V
–40°C
0
500
1 000
1 500
2 000
2 500
0
500
1 000
1 500
2 000
2 500
Frequency f (MHz)
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
8
Data Sheet PU10558EJ01V0DS
µPC3226TB
OUTPUT POWER, IM
3
vs. INPUT POWER
OUTPUT POWER, IM vs. INPUT POWER
3
+20
+10
0
+20
+10
0
f
f
= 1 000 MHz
1 = 1 001 MHz
f
f
= 2 200 MHz
1 = 2 201 MHz
P
out
2
2
P
out
–10
–20
–30
–40
–50
–60
–70
–80
–90
IM
3
–10
–20
–30
–40
–50
–60
–70
IM3
–30
–10
–35
–20
–40
–20
0
–40
–30
Input Power Pin (dBm)
–25
–15
Input Power Pin (dBm)
OUTPUT POWER, IM
2
vs. INPUT POWER
IM vs. INPUT POWER
2
+20
+10
0
60
50
40
30
20
10
0
f
f
= 1 000 MHz
1 = 1 001 MHz
2
P
out
V
CC = 5.5 V
–10
–20
–30
–40
–50
–60
–70
IM2
5.0 V
4.5 V
–10
–40
–10
Input Power Pin (dBm)
–30
Input Power Pin (dBm)
–40
–30
–20
0
–20
–10
0
Remark The graphs indicate nominal characteristics.
9
Data Sheet PU10558EJ01V0DS
µPC3226TB
S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V, Pin = −30 dBm)
S11−FREQUENCY
START: 100.000 000 MHz
STOP : 5 100.000 000 MHz
1
2
1 : 1 000 MHz 73.191 Ω −12.578 Ω
2 : 2 200 MHz 61.383 Ω −32.15 Ω
S22−FREQUENCY
START: 100.000 000 MHz
STOP : 5 100.000 000 MHz
1
2
1 : 1 000 MHz 80.102 Ω −13.164 Ω
2 : 2 200 MHz 56.375 Ω −30.771 Ω
10
Data Sheet PU10558EJ01V0DS
µPC3226TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
1.25±0.1
0.1 MIN.
11
Data Sheet PU10558EJ01V0DS
µPC3226TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC line.
(4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Condition Symbol
IR260
Peak temperature (package surface temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Wave Soldering
Partial Heating
Peak temperature (molten solder temperature)
Time at peak temperature
: 260°C or below
WS260
HS350
: 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
Soldering time (per side of device)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
Maximum chlorine content of rosin flux (% mass)
Caution Do not use different soldering methods together (except for partial heating).
12
Data Sheet PU10558EJ01V0DS
µPC3226TB
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
•
The information in this document is current as of May, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
13
Data Sheet PU10558EJ01V0DS
µPC3226TB
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0504
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