UPC3227TB-E3-A [NEC]
5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER; 5 V ，硅锗MMIC宽带放大器
| 型号： | UPC3227TB-E3-A |
| 厂家： | 
NEC |
| 描述： | 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER |
| 文件： | 总14页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC3227TB
5 V, SILICON GERMANIUM MMIC
WIDEBAND AMPLIFIER
DESCRIPTION
The µPC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
•
•
Low current
: ICC = 4.8 mA TYP. @ VCC = 5.0 V
: PO (sat) = −1.0 dBm TYP. @ f = 1.0 GHz
: PO (sat) = −3.5 dBm TYP. @ f = 2.2 GHz
: PO (1dB) = −6.5 dBm TYP. @ f = 1.0 GHz
: PO (1dB) = −8.0 dBm TYP. @ f = 2.2 GHz
: GP = 22.0 dB TYP. @ f = 1.0 GHz
: GP = 22.0 dB TYP. @ f = 2.2 GHz
: NF = 4.7 dB TYP. @ f = 1.0 GHz
: NF = 4.6 dB TYP. @ f = 2.2 GHz
: VCC = 4.5 to 5.5 V
Output power
•
•
•
High linearity
Power gain
Noise Figure
•
•
Supply voltage
Port impedance
: input/output 50 Ω
APPLICATIONS
•
IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
C3P
Supplying Form
Embossed tape 8 mm wide.
µPC3227TB-E3
µPC3227TB-E3-A 6-pin super minimold
(Pb-Free)Note
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: µPC3227TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10557EJ02V0DS (2nd edition)
Date Published July 2005 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2005
µPC3227TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
Pin Name
INPUT
GND
(Top View)
(Top View)
(Bottom View)
1
2
3
4
5
6
3
2
1
4 3
5 2
6 1
4 4
5 5
6 6
3
2
1
GND
OUTPUT
GND
VCC
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC WIDEBAND AMPLIFIER
(TA = +25°C, f = 1 GHz, VCC = 5.0 V, ZS = ZL = 50 Ω)
fu
PO (sat)
GP
NF
ICC
Part No.
Package
Marking
(GHz)
(dBm)
(dB)
(dB)
(mA)
µPC2711TB
µPC2712TB
µPC3215TB Note
µPC3224TB
µPC3227TB
2.9
2.6
2.9
3.2
3.2
+1.0
+3.0
+3.5
+4.0
−1.0
13
20
5.0
4.5
2.3
4.3
4.7
12
12
6-pin super minimold
C1G
C1H
C3H
C3K
C3P
20.5
21.5
22
14
9.0
4.8
Note µPC3215TB is f = 1.5 GHz
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
2
Data Sheet PU10557EJ02V0DS
µPC3227TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Symbol
Conditions
Ratings
6.0
Unit
V
VCC
ICC
PD
TA = +25°C
TA = +25°C
TA = +85°C
Total Circuit Current
Power Dissipation
15
mA
mW
°C
Note
270
Operating Ambient Temperature
Storage Temperature
Input Power
TA
−40 to +85
−55 to +150
+10
Tstg
Pin
°C
TA = +25°C
dBm
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Symbol
VCC
Conditions
MIN.
4.5
TYP.
5.0
MAX.
Unit
V
Supply Voltage
Operating Ambient Temperature
5.5
TA
−40
+25
+85
°C
3
Data Sheet PU10557EJ02V0DS
µPC3227TB
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Circuit Current
Symbol
ICC
Test Conditions
No input signal
MIN.
4.0
TYP.
4.8
MAX.
Unit
mA
dB
6.0
24.5
24.5
25.0
25.0
25.0
24.5
−
Power Gain 1
GP1
f = 0.1 GHz, Pin = −40 dBm
f = 1.0 GHz, Pin = −40 dBm
f = 1.8 GHz, Pin = −40 dBm
f = 2.2 GHz, Pin = −40 dBm
f = 2.6 GHz, Pin = −40 dBm
f = 3.0 GHz, Pin = −40 dBm
f = 1.0 GHz, Pin = −12 dBm
f = 2.2 GHz, Pin = −12 dBm
20.5
19.5
19.0
19.0
19.0
18.0
−3.5
−6.0
−9.0
−11.0
−
22.5
22.0
22.0
22.0
22.0
21.0
−1.0
−3.5
−6.5
−8.0
4.7
Power Gain 2
GP2
Power Gain 3
GP3
Power Gain 4
GP4
Power Gain 5
GP5
Power Gain 6
GP6
Saturated Output Power 1
Saturated Output Power 2
PO (sat) 1
PO (sat) 2
dBm
dBm
dB
−
Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz
Gain 1 dB Compression Output Power 2 PO (1 dB) 2 f = 2.2 GHz
−
−
Noise Figure 1
NF1
NF2
f = 1.0 GHz
5.5
5.5
−
Noise Figure 2
f = 2.2 GHz
−
4.6
Isolation 1
ISL1
f = 1.0 GHz, Pin = −40 dBm
f = 2.2 GHz, Pin = −40 dBm
f = 1.0 GHz, Pin = −40 dBm
f = 2.2 GHz, Pin = −40 dBm
f = 1.0 GHz, Pin = −40 dBm
f = 2.2 GHz, Pin = −40 dBm
35
40
dB
Isolation 2
ISL2
35
43
−
Input Return Loss 1
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
RLin1
RLin2
RLout1
RLout2
IIP31
7.5
10.5
10.5
13.5
9.5
−
dB
7.5
−
10.0
7.5
−
dB
−
Input 3rd Order Distortion
Intercept Point 1
f1 = 1 000 MHz, f2 = 1 001 MHz,
−
−18.0
−
dBm
Pin = −40 dBm
Input 3rd Order Distortion
Intercept Point 2
IIP32
OIP31
OIP32
IM2
f1 = 2 200 MHz, f2 = 2 201 MHz,
−
−
−
−
−20.5
+4.0
+1.5
30.5
−
−
−
−
Pin = −40 dBm
Output 3rd Order Distortion
Intercept Point 1
f1 = 1 000 MHz, f2 = 1 001 MHz,
dBm
dBc
Pin = −40 dBm
Output 3rd Order Distortion
Intercept Point 2
f1 = 2 200 MHz, f2 = 2 201 MHz,
Pin = −40 dBm
2nd Order Intermodulation Distortion
f1 = 1 000 MHz, f2 = 1 001 MHz,
Pin = −40 dBm
K factor 1
K factor 2
K1
K2
f = 1.0 GHz
f = 2.2 GHz
−
−
3.8
3.9
−
−
−
−
4
Data Sheet PU10557EJ02V0DS
µPC3227TB
TEST CIRCUIT
V
CC
C
4
1 000 pF
1 000 pF
C
3
6
50 Ω
IN
50 Ω
C
1
C
2
4
1
OUT
100 pF
100 pF
2, 3, 5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Type
Value
100 pF
C1, C2
C3
Chip Capacitor
Chip Capacitor
1 000 pF
1 000 pF
C4
Feed-through Capacitor
CAPACITORS FOR VCC AND INPUT PINS
Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be
supplied against VCC fluctuation.
Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.
5
Data Sheet PU10557EJ02V0DS
µPC3227TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
AMP-2
IN
OUT
C1
C2
C3
VCC
C4
COMPONENT LIST
Notes
Value
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
C1, C2
C3, C4
100 pF
1 000 pF
3. Solder plated on pattern
4.
: Through holes
6
Data Sheet PU10557EJ02V0DS
µPC3227TB
TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified)
CIRCUIT CURRENT vs.
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
OPERATING AMBIENT TEMPERATURE
6
6.0
No Input Signal
No Input Signal
5
4
3
5.5
5.0
4.5
4.0
3.5
3.0
T
A
= +85°C
2
1
+25°C
–40°C
0
1
2
3
4
5
6
–60 –40 –20
0
20
40
60
80 100
Supply Voltage VCC (V)
Operating Ambient Temperature T
A
(°C)
POWER GAIN vs. FREQUENCY
ISOLATION vs. FREQUENCY
30
25
20
15
10
5
0
–10
–20
–30
–40
–50
–60
V
CC = 5.5 V
V
CC = 4.5 V
5.0 V
4.5 V
5.0 V
1.0
5.5 V
2.0
0
0.1
0.3 0.5
1.0
2.0
4.0
0.1
0.3 0.5
4.0
Frequency f (GHz)
Frequency f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
0
V
CC = 4.5 V
–5
–10
–15
–20
–25
–30
–5
V
CC = 4.5 V
–10
–15
–20
–25
–30
5.0 V
5.5 V
5.0 V
1.0
5.5 V
0.1
0.3 0.5
1.0
2.0
4.0
0.1
0.3 0.5
2.0
4.0
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10557EJ02V0DS
µPC3227TB
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+5
0
+5
0
f = 1.0 GHz
f = 2.2 GHz
V
CC = 5.5 V
V
CC = 5.5 V
–5
–5
5.0 V
5.0 V
4.5 V
–10
–15
–20
–10
–15
–20
4.5 V
–35
–20
Input Power Pin (dBm)
–40
–30
–25
–15
–10
–35
–20
Input Power Pin (dBm)
–40
–30
–25
–15
–10
NOISE FIGURE vs. FREQUENCY
NOISE FIGURE vs. FREQUENCY
6.0
5.5
5.0
4.5
4.0
3.5
3.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
T
A
= +85°C
V
CC = 4.5 V
+25°C
5.0 V
5.5 V
–40°C
0
500
1 000
1 500
2 000
2 500
3 000
0
500
1 000
1 500
2 000
2 500
3 000
Frequency f (MHz)
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
8
Data Sheet PU10557EJ02V0DS
µPC3227TB
OUTPUT POWER, IM vs. INPUT POWER
3
OUTPUT POWER, IM vs. INPUT POWER
3
+10
+10
f
= 1 000 MHz
1 = 1 001 MHz
f
= 2 200 MHz
1 = 2 201 MHz
f
2
f
2
0
0
Pout
P
out
–10
–20
–30
–40
–50
–60
–70
–80
–10
–20
–30
–40
–50
–60
–70
–80
IM3
IM
3
–40
–10
–40
–10
–50
–30
–20
0
–50
–30
–20
0
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, IM
2
vs. INPUT POWER
IM vs. INPUT POWER
2
+10
50
40
30
20
10
0
0
–10
–20
–30
–40
–50
–60
–70
–80
P
out
IM2
–50
–40
Input Power Pin (dBm)
–10
–50
–40
Input Power Pin (dBm)
–60
–30
–20
0
–60
–30
–20
–10
Remark The graphs indicate nominal characteristics.
9
Data Sheet PU10557EJ02V0DS
µPC3227TB
S-PARAMETERS (TA = +25°C, VCC = 5.0 V, Pin = −40 dBm)
S11−FREQUENCY
START: 100.000 000 MHz
STOP : 5 100.000 000 MHz
1
2
1 : 1 000 MHz 91.02 Ω −2.3789 Ω
2 : 2 200 MHz 82.914 Ω −26.738 Ω
S22−FREQUENCY
START: 100.000 000 MHz
STOP : 5 100.000 000 MHz
1
2
1 : 1 000 MHz 77.086 Ω 6.1797 Ω
2 : 2 200 MHz 92.535 Ω −28.438 Ω
10
Data Sheet PU10557EJ02V0DS
µPC3227TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1 0.1
1.25 0.1
0.1 MIN.
11
Data Sheet PU10557EJ02V0DS
µPC3227TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC line.
(4) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Condition Symbol
IR260
Peak temperature (package surface temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Wave Soldering
Partial Heating
Peak temperature (molten solder temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
WS260
HS350
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
Soldering time (per side of device)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
Maximum chlorine content of rosin flux (% mass)
Caution Do not use different soldering methods together (except for partial heating).
12
Data Sheet PU10557EJ02V0DS
µPC3227TB
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
•
The information in this document is current as of July, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
13
Data Sheet PU10557EJ02V0DS
µPC3227TB
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
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TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0504
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