UPC3226TB [CEL]

BIPOLAR ANALOG INTEGRATED CIRCUIT; 双极模拟集成电路
UPC3226TB
型号: UPC3226TB
厂家: CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述:

BIPOLAR ANALOG INTEGRATED CIRCUIT
双极模拟集成电路

文件: 总13页 (文件大小:408K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BIPOLAR ANALOG INTEGRATED CIRCUIT  
UPC3226TB  
5 V, SILICON GERMANIUM MMIC  
MEDIUM OUTPUT POWER AMPLIFIER  
DESCRIPTION  
The µPC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.  
This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.  
FEATURES  
Low current  
: ICC = 15.5 mA TYP. @ VCC = 5.0 V  
: PO (sat) = +13.0 dBm TYP. @ f = 1.0 GHz  
: PO (sat) = +9.0 dBm TYP. @ f = 2.2 GHz  
: PO (1dB) = +7.5 dBm TYP. @ f = 1.0 GHz  
: PO (1dB) = +5.7 dBm TYP. @ f = 2.2 GHz  
: GP = 25.0 dB TYP. @ f = 1.0 GHz  
: GP = 26.0 dB TYP. @ f = 2.2 GHz  
: NF = 5.3 dB TYP. @ f = 1.0 GHz  
: NF = 4.9 dB TYP. @ f = 2.2 GHz  
: VCC = 4.5 to 5.5 V  
Medium output power  
High linearity  
Power gain  
Noise Figure  
Supply voltage  
Port impedance  
: input/output 50  
APPLICATIONS  
IF amplifiers in LNB for DBS converters etc.  
ORDERING INFORMATION  
Part Number  
Order Number  
Package  
Marking  
C3N  
Supplying Form  
Embossed tape 8 mm wide.  
µPC3226TB-E3  
µPC3226TB-E3-A 6-pin super minimold  
(Pb-Free) Note  
1, 2, 3 pins face the perforation side of the tape.  
Qty 3 kpcs/reel.  
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact  
your nearby sales office.  
Remark To order evaluation samples, please contact your nearby sales office  
Part number for sample order: µPC3226TB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
Document No. PU10558EJ01V0DS (1st edition)  
Date Published May 2005 CP(K)  
UPC3226TB  
PIN CONNECTIONS  
Pin No.  
Pin Name  
INPUT  
GND  
(Top View)  
(Top View)  
(Bottom View)  
1
2
3
4
5
6
3
2
1
4
5
6
3
2
1
4
5
6
4
5
6
3
2
1
GND  
OUTPUT  
GND  
VCC  
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER  
(TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 )  
fu  
PO (sat)  
GP  
NF  
ICC  
Part No.  
Package  
Marking  
(GHz)  
(dBm)  
(dB)  
(dB)  
(mA)  
µPC2708TB  
µPC2709TB  
µPC2710TB  
µPC2776TB  
µPC3223TB  
µPC3225TB  
µPC3226TB  
2.9  
2.3  
1.0  
2.7  
3.2  
2.8  
3.2  
+10.0  
+11.5  
15  
23  
6.5  
5.0  
26  
25  
6-pin super minimold  
C1D  
C1E  
C1F  
C2L  
C3J  
C3M  
C3N  
+13.5  
33  
3.5  
22  
+8.5  
23  
6.0  
25  
+12.0  
23  
4.5  
19  
+15.5 Note  
32.5 Note  
3.7 Note  
24.5  
15.5  
+13.0  
25  
5.3  
Note µPC3225TB is f = 0.95 GHz  
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.  
2
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Supply Voltage  
Symbol  
Conditions  
Ratings  
6.0  
Unit  
V
VCC  
ICC  
PD  
TA = +25°C  
TA = +25°C  
TA = +85°C  
Total Circuit Current  
Power Dissipation  
40  
mA  
mW  
°C  
Note  
270  
Operating Ambient Temperature  
Storage Temperature  
Input Power  
TA  
40 to +85  
55 to +150  
+10  
Tstg  
Pin  
°C  
TA = +25°C  
dBm  
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB  
RECOMMENDED OPERATING RANGE  
Parameter  
Supply Voltage  
Operating Ambient Temperature  
Symbol  
VCC  
Conditions  
MIN.  
4.5  
TYP.  
5.0  
MAX.  
Unit  
V
5.5  
TA  
40  
+25  
+85  
°C  
3
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 )  
Parameter  
Circuit Current  
Symbol  
ICC  
Test Conditions  
No input signal  
MIN.  
12.5  
22.0  
23.0  
23.0  
23.0  
22.5  
22.0  
+10.0  
+6.0  
+5.0  
+3.0  
TYP.  
15.5  
24.0  
25.0  
26.0  
26.0  
25.5  
25.0  
+13.0  
+9.0  
+7.5  
+5.7  
5.3  
MAX.  
19.5  
26.0  
27.5  
29.0  
29.0  
29.0  
28.5  
Unit  
mA  
dB  
Power Gain 1  
GP1  
GP2  
GP3  
GP4  
GP5  
GP6  
f = 0.1 GHz, Pin = 30 dBm  
f = 1.0 GHz, Pin = 30 dBm  
f = 1.8 GHz, Pin = 30 dBm  
f = 2.2 GHz, Pin = 30 dBm  
f = 2.6 GHz, Pin = 30 dBm  
f = 3.0 GHz, Pin = 30 dBm  
Power Gain 2  
Power Gain 3  
Power Gain 4  
Power Gain 5  
Power Gain 6  
Saturated Output Power 1  
Saturated Output Power 2  
PO (sat) 1 f = 1.0 GHz, Pin = 2 dBm  
PO (sat) 2 f = 2.2 GHz, Pin = 8 dBm  
dBm  
dBm  
dB  
Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz  
Gain 1 dB Compression Output Power 2 PO (1 dB) 2 f = 2.2 GHz  
Noise Figure 1  
NF1  
NF2  
f = 1.0 GHz  
6.0  
6.0  
Noise Figure 2  
f = 2.2 GHz  
4.9  
Isolation 1  
ISL1  
f = 1.0 GHz, Pin = 30 dBm  
f = 2.2 GHz, Pin = 30 dBm  
f = 1.0 GHz, Pin = 30 dBm  
f = 2.2 GHz, Pin = 30 dBm  
f = 1.0 GHz, Pin = 30 dBm  
f = 2.2 GHz, Pin = 30 dBm  
31  
34  
dB  
Isolation 2  
ISL2  
33  
36  
Input Return Loss 1  
Input Return Loss 2  
Output Return Loss 1  
Output Return Loss 2  
Input 3rd Order Distortion Intercept Point 1  
RLin1  
RLin2  
RLout1  
RLout2  
IIP31  
10.0  
9.0  
14.0  
13.0  
13.0  
13.0  
5.0  
dB  
10.0  
10.0  
dB  
f1 = 1 000 MHz, f2 = 1 001 MHz,  
dBm  
Pin = 30 dBm  
Input 3rd Order Distortion Intercept Point 2  
IIP32  
f1 = 2 200 MHz, f2 = 2 201 MHz,  
11.0  
+20.0  
+15.0  
43.0  
Pin = 30 dBm  
Output 3rd Order Distortion Intercept Point 1 OIP31  
Output 3rd Order Distortion Intercept Point 2 OIP32  
f1 = 1 000 MHz, f2 = 1 001 MHz,  
dBm  
Pin = 30 dBm  
f1 = 2 200 MHz, f2 = 2 201 MHz,  
Pin = 30 dBm  
2nd Order Intermodulation Distortion  
IM2  
f1 = 1 000 MHz, f2 = 1 001 MHz,  
dBc  
Pin = 30 dBm  
K factor 1  
K factor 2  
K1  
K2  
f = 1.0 GHz  
f = 2.2 GHz  
1.4  
1.6  
4
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
TEST CIRCUIT  
V
CC  
C4  
1 000 pF  
1 000 pF  
C3  
L
4
100 nH  
6
50 Ω  
IN  
50 Ω  
C1  
C2  
1
OUT  
100 pF  
100 pF  
2, 3, 5  
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.  
COMPONENTS OF TEST CIRCUIT FOR MEASURING  
ELECTRICAL CHARACTERISTICS  
Type  
Value  
100 pF  
C1, C2  
C3  
Chip Capacitor  
Chip Capacitor  
Feed-through Capacitor  
Chip Inductor  
1 000 pF  
1 000 pF  
100 nH  
C4  
L
INDUCTOR FOR THE OUTPUT PIN  
The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect  
an inductor between the VCC pin (pin 6) and output pin (pin 4). Select inductance, as the value listed above.  
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum  
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get  
enough gain. In this case, large inductance and Q is suitable.  
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS  
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for  
the input and output pins.  
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias  
can be supplied against VCC fluctuation.  
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial  
impedance. Their capacitances are therefore selected as lower impedance against a 50 load. The capacitors thus  
perform as high pass filters, suppressing low frequencies to DC.  
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under  
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are  
determined by equation, C = 1/(2 πRfc).  
5
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD  
IN  
C1  
C2  
OUT  
L
C3  
C4  
COMPONENT LIST  
Notes  
Value  
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.  
2. Back side: GND pattern  
C1, C2  
C3, C4  
L1  
100 pF  
1 000 pF  
100 nH  
3. Solder plated on pattern  
4.  
: Through holes  
6
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
TYPICAL CHARACTERISTICS (T  
A
= +25  
°
C, VCC = Vout = 5.0 V, Z  
S
= Z = 50 , unless otherwise specified)  
L
CURCUIT CURRENT vs.  
OPERATING AMBIENT TEMPERATURE  
CIRCUIT CURRENT vs. SUPPLY VOLTAGE  
25  
18  
No Input Signal  
17  
16  
15  
14  
13  
12  
20  
T
A
= +85°C  
15  
10  
5
+25°C  
–40°C  
0
1
2
3
4
5
6
–50  
–25  
0
25  
50  
75  
(°C)  
100  
Supply Voltage VCC (V)  
Operating Ambient Temperature T  
A
POWER GAIN vs. FREQUENCY  
ISOLATION vs. FREQUENCY  
30  
25  
20  
15  
10  
5
0
–10  
–20  
–30  
–40  
–50  
–60  
V
CC = 5.5 V  
5.0 V  
V
CC = 4.5 V  
4.5 V  
5.0 V  
5.5 V  
0
0.1  
0.3  
0.5  
1.0  
2.0 3.0  
0.1  
0.3  
0.5  
1.0  
2.0 3.0  
Frequency f (GHz)  
Frequency f (GHz)  
INPUT RETURN LOSS vs. FREQUENCY  
OUTPUT RETURN LOSS vs. FREQUENCY  
0
0
–5  
–5  
V
CC = 4.5 V  
–10  
–15  
–20  
–25  
–30  
–10  
–15  
–20  
–25  
–30  
V
CC = 4.5 V  
5.0 V  
1.0  
5.5 V  
5.0 V  
5.5 V  
2.0 3.0  
0.1  
0.3  
0.5  
1.0  
0.1  
0.3  
0.5  
2.0 3.0  
Frequency f (GHz)  
Frequency f (GHz)  
Remark The graphs indicate nominal characteristics.  
7
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
OUTPUT POWER vs. INPUT POWER  
OUTPUT POWER vs. INPUT POWER  
+20  
+15  
+10  
+5  
+20  
+15  
+10  
+5  
f = 1.0 GHz  
f = 2.2 GHz  
CC = 5.5 V  
V
V
CC = 5.5 V  
5.0 V  
0
0
5.0 V  
4.5 V  
–5  
–5  
4.5 V  
–10  
–15  
–20  
–10  
–15  
–20  
–30  
0
Input Power Pin (dBm)  
–40  
–20  
–10  
+10  
+20  
–30  
–10  
Input Power Pin (dBm)  
–40  
–20  
0
+10  
NOISE FIGURE vs. FREQUENCY  
NOISE FIGURE vs. FREQUENCY  
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
V
CC = 4.5 V  
T
A
= +85°C  
5.0 V  
+25°C  
5.5 V  
–40°C  
0
500  
1 000  
1 500  
2 000  
2 500  
0
500  
1 000  
1 500  
2 000  
2 500  
Frequency f (MHz)  
Frequency f (MHz)  
Remark The graphs indicate nominal characteristics.  
8
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
OUTPUT POWER, IM  
3
vs. INPUT POWER  
OUTPUT POWER, IM vs. INPUT POWER  
3
+20  
+10  
0
+20  
+10  
0
f
f
= 1 000 MHz  
1 = 1 001 MHz  
f
f
= 2 200 MHz  
1 = 2 201 MHz  
P
out  
2
2
P
out  
–10  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–90  
IM  
3
–10  
–20  
–30  
–40  
–50  
–60  
–70  
IM3  
–30  
–10  
–35  
–20  
–40  
–20  
0
–40  
–30  
Input Power Pin (dBm)  
–25  
–15  
Input Power Pin (dBm)  
OUTPUT POWER, IM  
2
vs. INPUT POWER  
IM vs. INPUT POWER  
2
+20  
+10  
0
60  
50  
40  
30  
20  
10  
0
f
= 1 000 MHz  
= 1 001 MHz  
f1  
2
P
out  
V
CC = 5.5 V  
–10  
–20  
–30  
–40  
–50  
–60  
–70  
IM2  
5.0 V  
4.5 V  
–10  
–40  
–10  
–30  
Input Power Pin (dBm)  
–40  
–30  
–20  
0
–20  
–10  
0
Input Power Pin (dBm)  
Remark The graphs indicate nominal characteristics.  
9
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V, Pin = 30 dBm)  
S11FREQUENCY  
START: 100.000 000 MHz  
STOP : 5 100.000 000 MHz  
1
2
1 : 1 000 MHz 73.191 12.578 Ω  
2 : 2 200 MHz 61.383 32.15 Ω  
S22FREQUENCY  
START: 100.000 000 MHz  
STOP : 5 100.000 000 MHz  
1
2
1 : 1 000 MHz 80.102 13.164 Ω  
2 : 2 200 MHz 56.375 30.771 Ω  
10  
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
PACKAGE DIMENSIONS  
6-PIN SUPER MINIMOLD (UNIT: mm)  
2.ꢀ 0.ꢀ  
ꢀ.25 0.ꢀ  
0.ꢀ MIN.  
11  
Data Sheet PU10558EJ01V0DS  
UPC3226TB  
NOTES ON CORRECT USE  
(1) Observe precautions for handling because of electro-static sensitive devices.  
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).  
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.  
(3) The bypass capacitor should be attached to the VCC line.  
(4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in  
accordance with desired frequency.  
(5) The DC cut capacitor must be attached to input and output pin.  
RECOMMENDED SOLDERING CONDITIONS  
This product should be soldered and mounted under the following recommended conditions. For soldering  
methods and conditions other than those recommended below, contact your nearby sales office.  
Soldering Method  
Infrared Reflow  
Soldering Conditions  
Condition Symbol  
IR260  
Peak temperature (package surface temperature)  
Time at peak temperature  
: 260°C or below  
: 10 seconds or less  
: 60 seconds or less  
: 120±30 seconds  
: 3 times  
Time at temperature of 220°C or higher  
Preheating time at 120 to 180°C  
Maximum number of reflow processes  
Maximum chlorine content of rosin flux (% mass)  
: 0.2%(Wt.) or below  
Wave Soldering  
Partial Heating  
Peak temperature (molten solder temperature)  
Time at peak temperature  
: 260°C or below  
WS260  
HS350  
: 10 seconds or less  
Preheating temperature (package surface temperature) : 120°C or below  
Maximum number of flow processes  
: 1 time  
Maximum chlorine content of rosin flux (% mass)  
: 0.2%(Wt.) or below  
Peak temperature (terminal temperature)  
Soldering time (per side of device)  
: 350°C or below  
: 3 seconds or less  
: 0.2%(Wt.) or below  
Maximum chlorine content of rosin flux (% mass)  
Caution Do not use different soldering methods together (except for partial heating).  
12  
Data Sheet PU10558EJ01V0DS  
4590 Patrick Henry Drive  
Santa Clara, CA 95054-1817  
Telephone: (408) 919-2500  
Facsimile: (408) 988-0279  
Subject: Compliance with EU Directives  
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant  
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous  
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive  
2003/11/EC Restriction on Penta and Octa BDE.  
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates  
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are  
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.  
All devices with these suffixes meet the requirements of the RoHS directive.  
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that  
go into its products as of the date of disclosure of this information.  
Restricted Substance  
per RoHS  
Concentration Limit per RoHS  
(values are not yet fixed)  
Concentration contained  
in CEL devices  
-A  
-AZ  
(*)  
Lead (Pb)  
Mercury  
< 1000 PPM  
< 1000 PPM  
< 100 PPM  
< 1000 PPM  
< 1000 PPM  
< 1000 PPM  
Not Detected  
Not Detected  
Cadmium  
Hexavalent Chromium  
PBB  
Not Detected  
Not Detected  
Not Detected  
Not Detected  
PBDE  
If you should have any additional questions regarding our devices and compliance to environmental  
standards, please do not hesitate to contact your local representative.  
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance  
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information  
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better  
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate  
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL  
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for  
release.  
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to  
customer on an annual basis.  
See CEL Terms and Conditions for additional clarification of warranties and liability.  

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