2SK1398 [NEC]
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING; N沟道MOS FET，用于高速开关
| 型号： | 2SK1398 |
| 厂家： | 
NEC |
| 描述： | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 文件： | 总8页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
★
ORDERING INFORMATION
DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
PART NUMBER
2SK1398
PACKAGE
SST
FEATURES
• Directly driven by ICs having a 3-V power supply.
• Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.
• Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
GS
DSS
Drain to Source Voltage (V = 0 V)
V
V
50
±7.0
V
V
DS
GSS
Gate to Source Voltage (V = 0 V)
D(DC)
Drain Current (DC)
I
±100
mA
mA
mW
°C
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Storage Temperature
D(pulse)
I
±200
T
P
250
ch
T
150
stg
T
–55 to +150
°C
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
1991, 2000
©
2SK1398
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
Drain Cut-off Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 50 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±5.0
1.5
µA
µA
V
★
Gate Leakage Current
IGSS
VGS = ±7.0 V, VDS = 0 V
VDS = 3.0 V, ID = 1.0 µA
VDS = 3.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
VDS = 3.0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
0.9
20
1.2
38
22
14
8
mS
Ω
40
20
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
7
Crss
f = 1 MHz
3
td(on)
VDD = 3.0 V
15
100
30
35
tr
ID = 20 mA
Turn-off Delay Time
Fall Time
td(off)
VGS(on) = 3.0 V
tf
RG = 10 Ω, RL = 150 Ω
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
RL
90 %
V
GS
Wave Form
VGS(on)
10 %
0
R
G
PG.
VDD
R = 10 Ω
G
90 %
I
D
90 %
10 %
I
D
V
0
GS
10 %
I
D
0
Wave Form
t
r
t
d(on)
td(off)
t
f
τ
t
on
toff
τ = 1µ s
Duty Cycle ≤ 1 %
2
Data Sheet D14772EJ2V0DS00
2SK1398
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
250
200
150
100
50
100
80
60
40
20
0
20 40 60 80 100 120 140 160
- Case Temperature - ˚C
0
30
60
90 120 150 180
T
C
T
A
- Ambient Temperature - ˚C
FORWARD TRANSFER CHARACTERISTICS
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
10
1
100
80
60
40
20
Pulsed
V
V
V
GS = 4.5 V
GS = 4.0 V
GS = 2.5 V
T
A
= 150 ˚C
75 ˚C
★
25 ˚C
−25 ˚C
0.1
1.0
2.0
0
1.5
0.5
V
DS = 3.0 V
0.01
V
DS - Drain to Source Voltage - V
2
0
1
3
4
5
6
7
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.0
1000
100
10
V
DS = 3.0 V
V
DS = 5.0 V
I
D
= 1.0 µA
f = 1 kHz
1.5
1.0
0.5
1
10
100 200
I
D
- Drain Current - mA
0
50
100
150
T
ch - Channel Temperature - ˚C
3
Data Sheet D14772EJ2V0DS00
2SK1398
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
30
20
100
Pulsed
Pulsed
V
GS = 2.5 V
V
GS = 4.0 V
★
10
ID = 100 mA
I = 10 mA
D
10
1
0.1
1
10
100
I
D - Drain Current - mA
0
1
3
5
7
8
9
2
4
6
10
V
GS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
20
30
VGS = 2.5 V
V
GS = 4.0 V
= 5.0 mA
ID
= 5.0 mA
ID
25
15
10
20
15
0
0
100
ch - Channel Temperature - ˚C
150
100
Tch - Channel Temperature - ˚C
150
50
50
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1 000
100
100
V
GS = 0 V
f = 1 MHz
t
r
t
f
t
d(off)
d(on)
10
Ciss
t
10
1
C
oss
V
DD = 3.0 V
V
= 3.0 V
C
rss
RGGSS = 10 Ω
1
1000
1
10
100
1
10
DS - Drain to Source Voltage - V
100
I
D
- Drain Current - mA
V
4
Data Sheet D14772EJ2V0DS00
2SK1398
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
V
GS = 0 V
100
10
1
0.1
0.5
0.6
0.7
0.8
0.9
1.0
VSD - Source to Drain Voltage - V
5
Data Sheet D14772EJ2V0DS00
2SK1398
PACKAGE DRAWING (Unit: mm)
SST
4.0±0.2
2.0±0.2
2
3
1
0.50 TYP.
0.45 TYP.
EQUIVALENT CIRCUIT
Drain
0.42 TYP.
Body
Diode
Gate
Gate
Protection
Diode
Source
Marking : G25
1.27 TYP.
1.27 TYP.
1. Source
2. Drain
3. Gate
2
3
1
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D14772EJ2V0DS00
2SK1398
[MEMO]
7
Data Sheet D14772EJ2V0DS00
2SK1398
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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