2SK1399 [TYSEMI]
Can be driven by a 3.0-V power source Possible to reduce the number of parts by omitting the bias resistor; 可以通过一个3.0 V电源可能被驱动，通过省略偏置电阻，以减少部件的数量
| 型号： | 2SK1399 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Can be driven by a 3.0-V power source Possible to reduce the number of parts by omitting the bias resistor |
| 文件： | 总1页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Product specification
2SK1399
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Can be driven by a 3.0-V power source
Not necessary to consider driving current because of it is high input
impedance
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
Possible to reduce the number of parts by omitting the bias resistor
1 GATE
2 SOURCE
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
50
Unit
V
Gate to source voltage
Drain current (DC)
V
7.0
mA
mA
m W
100
Drain current(pulse) *
Power dissipation
ID
200
PD
200
Channel temperature
Storage temperature
* PW 10ms, duty cycle
Tch
150
Tstg
-55 to +150
5%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
10
Unit
A
Drain cut-off current
IDSS
IGSS
VDS=50V,VGS=0
VGS= 7.0V,VDS=0
Gate leakage current
5.0
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off)
0.9
20
1.2
38
22
14
8
1.5
V
VDS=3.0V,ID=1
A
VDS=3.0V,ID=10mA
VGS=2.5V,ID=10mA
VGS=4.0V,ID=10mA
ms
Yfs
40
20
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
VDS=3.0V,VGS=0,f=1MHZ
7
3
15
100
30
35
ID=20mA,VGS(on)=3V,RL=150
,VDD=3.0V,RG=10
Turn-off delay time
Fall time
td(off)
tf
Marking
Marking
G12
http://www.twtysemi.com
sales@twtysemi.com
1 of 1
4008-318-123
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