2SK1399-T2B [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59;型号: | 2SK1399-T2B |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:241K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Elnics Corporation
Issued by: Renesas Electronics Corporation (http://wwesas.com)
Send any inquiries to http://www.renesas.com/inqu
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET can be
driven by 2.5 V power supply.
The 2SK1399 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliances including
VCR cameras and headphone stereos which need power saving.
PACKAGE DRAWING (Unit: mm)
2.8 ±±.2
+±.1
–±.15
±.65
1.5
2
3
FEATURES
• Can be driven by a 3.0 V power source
• Not necessary to consider driving current because of its high input
impedance
1
Marking
• Possible to reduce the number of parts by omitting the bias resistor
• Can be used complementary with the 2SJ185
ORDERING INFORMATION
1. Source
2. Gate
3. Drain
PART NUMBER
2SK1399
PACKAGE
SC-59 (Mini
Marking: G12
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATING= 25°C)
Drain to Source Voltage (VGS = 0
Gate to Source Voltage (VDS =
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
50
±7.0
±100
±200
200
V
V
mA
mA
mW
°C
Drain
Drain Current (pulse) No
Body
Diode
Gate
Total Power DissipatioC = 25°C)
Channel Temperature
Storage Temperature
Tch
Tstg
150
−55 to +150
Gate
Protection
Diode
°C
Source
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14770EJ3V0DS00 (3rd edition)
The mark
shows major revised points.
Date Published June 2005 NS CP(K)
Printed in Japan
1991, 2000
2SK1399
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
10
UNIT
µA
µA
V
IDSS
VDS = 50 V, VGS = 0 V
IGSS
VGS = 7.0 V, VDS = 0 V
VDS = 3.0 V, ID = 1.0 µA
VDS = 3.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
VDS = 3.0 V
5.0
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
0.9
20
1.2
38
1.5
Note
Forward Transfer Admittance
mS
Ω
Note
Drain to Source On-state Resistance
22
40
20
14
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
8.0
7.0
3.0
15
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
Crss
f = 1 MHz
td(on)
VDD = 3.0 V, ID = 20 mA
VGS = 3.0 V
tr
100
30
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
tf
35
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
R
L
9±%
V
GS
1±%
Wave Form
±
RG
PG.
V
DD
%
I
9±%
1±%
I
D
V
±
GS
1±%
I
D
Wa
t
d(on)
t
r
t
d(off)
t
f
τ
t
on
t
off
µ
τ = 1
s
Duty Cycle ≤ 1%
2
Data Sheet D14770EJ3V0DS
2SK1399
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
3±±
1±±
8±
Pulse measurement
25±
2±±
15±
1±±
5±
V
GS = 4.5 V
4.± V
6±
4±
2.5 V
2±
±
±
±
3± 6±
9± 12± 15± 18± 21± 24±
±
±.5
1.5
2
T
A
- Ambient Temperature - ˚C
VDS - Source Voltage - V
TE CUT-OFF VOLTAGE
s. CHANNEL TEMPERATURE
TRANSFER CHARACTERISTICS
1.5
V
= 3.± V
I
D
D=S 1 µA
1±±
1±
1
±.1
TA
= 15±˚C
75˚C
25˚C
–25˚C
1.±
±.5
V
surement
±.±1
±
5±
1±±
15±
±
1
2
3
4
6
7
8
T
ch - Channel Temperature - ˚C
V
GS - Gate to Voltage - V
FORWANSFER ADMITTANCE vs.
DRAIN CENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1±±±
5±±
3±
V
= 5.± V
PuDSlse measurement
Pulse measurement
ID = 1±± mA
2±±
1±±
5±
2±
1±
±
1± mA
2±
1±
1
5
1± 2± 5± 1±± 2±± 5±± 1±±±
- Drain Current - mA
±
1
2
3
4
5
6
7
8
9
1±
ID
V
GS - Gate to Source Voltage - V
3
Data Sheet D14770EJ3V0DS
2SK1399
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1±±
5±
Pulse
measurement
V
GS = 2.5 V
4.± V
2±
1±
5
2
1
±
±.6 1
2
5
1± 2±
6±
I
D
- Drain Current - mA
4
Data Sheet D14770EJ3V0DS
2SK1399
•
The information in this document is current as of June, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an Nlectronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by ans without the prior
written consent of NEC Electronics. NEC Electronics assumes no responor any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of paopyrights or other intellectual
property rights of third parties by or arising from the use of NEC Elecproducts listed in this document
or any other liability arising from the use of such products. Ne, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual propertof NEC Electronics or others.
• Descriptions of circuits, software and other related informatis document are provided for illustrative
purposes in semiconductor product operation and apn examples. The incorporation of these
circuits, software and information in the design of a er's equipment shall be done under the full
responsibility of the customer. NEC Electronics ano responsibility for any losses incurred by
customers or third parties arising from the use of rcuits, software and information.
• While NEC Electronics endeavors to enhance lity, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the ity of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property (including death) to persons arising from defects in NEC
Electronics products, customers muporate sufficient safety measures in their design, such as
redundancy, fire-containment and are features.
• NEC Electronics products are cd into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality graies only to NEC Electronics products developed based on a customer-
designated "quality assurogram" for a specific application. The recommended applications of an NEC
Electronics product dn its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronuct before using it in a particular application.
"Standard": Comps, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E ±2. 11-1
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