2SK1399 [NEC]
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING; N沟道MOS场效应晶体管高速开关
| 型号： | 2SK1399 |
| 厂家： | 
NEC |
| 描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 文件： | 总8页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
The 2SK1399 is an N-channel vertical type MOS FET which can be
driven by 2.5-V power supply.
2.8 ± 0.2
+0.1
The 2SK1399 is driven by low voltage and does not require consideration
of driving current, it is suitable for appliances including VCR cameras and
headphone stereos which need power saving.
1.5
0.65
–0.15
2
1
FEATURES
3
• Can be driven by a 3.0-V power source
• Not necessary to consider driving current because of it is high input
impedance
Marking
• Possible to reduce the number of parts by omitting the bias resistor
• Can be used complementary with the 2SJ185
ORDERING INFORMATION
PART NUMBER
2SK1399
PACKAGE
SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
V
V
50
±7.0
V
V
Drain
Electrode
GSS
★
Connection
1.Source
2.Gate
D(DC)
I
±100
mA
mA
mW
°C
Internal
Diode
D(pulse)
I
±200
Gate
3.Drain
T
P
200
Gate
Protection
Diode
ch
T
150
Source
opt
T
–55 to +80
°C
Marking: G12
stg
T
–55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50 %
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14770EJ2V0DS00 (2nd edition)
(Previous No.TC-2343)
The mark ★ shows major revised points.
1991, 2000
©
Date Published March 2000 NS CP(K)
Printed in Japan
2SK1399
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Drain Cut-off Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 50 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±5.0
1.5
µA
µA
V
Gate Leakage Current
IGSS
VGS = ±7.0 V, VDS = 0 V
VDS = 3.0 V, ID = 1.0 µA
VDS = 3.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
VDS = 3.0 V
★
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
0.9
20
1.2
38
22
14
8
Forward Transfer Admittance
Drain to Source On-state Resistance
mS
Ω
40
20
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
7
Crss
f = 1 MHz
3
★
td(on)
VDD = 3.0 V
15
100
30
35
tr
ID = 20 mA
Turn-off Delay Time
Fall Time
td(off)
VGS(on) = 3.0 V
tf
RG = 10 Ω, RL = 150 Ω
★
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
IG = 2 mA
RL
VGS
RL
90 %
VGS
VGS(on)
10 %
Wave Form
0
RG
PG.
VDD
50 Ω
PG.
VDD
90 %
90 %
ID
ID
VGS
0
10 %
10 %
d(on)
ID
0
Wave Form
t
r
t
td(off)
t
f
τ
t
on
toff
τ = 1µs
Duty Cycle ≤ 1 %
2
Data Sheet D14770EJ2V0DS00
2SK1399
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
300
100
80
250
200
150
100
50
60
40
20
0
0
0
30 60
90 120 150 180 210 240
0
20
40 60
80 100 120 140 160
T
A
- Ambient Temperature - ˚C
T
c
- Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSFER CHARACTERISTICS
100
80
Pulse measurement
100
VGS = 4.5 V
10
1
4.0 V
60
★
40
T
A
= 150˚C
75˚C
2.5 V
25˚C
–25˚C
0.1
20
0
V
DS = 3.0 V
Pulse measurement
0.01
0
0.5
1
1.5
2
0
1
2
3
4
5
6
7
8
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
1000
500
2.0
1.5
V
DS = 5.0 V
V
= 3.0 V
D=S 1 µA
f = 1 kHz
I
D
200
100
50
1.0
0.5
20
10
1
5
10 20 50 100 200 500 1000
- Drain Current - mA
0
50
100
150
I
D
T
ch - Channel Temperature - ˚C
3
Data Sheet D14770EJ2V0DS00
2SK1399
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
50
30
Pulse measurement
Pulse
measurement
ID = 100 mA
V
GS = 2.5 V
4.0 V
20
10
5
20
10
0
10 mA
2
1
0
0.6 1
2
5
10 20
60
0
1
2
3
4
5
6
7
8
9
10
I
D
- Drain Current - mA
VGS - Gate to Source Voltage - V
4
Data Sheet D14770EJ2V0DS00
2SK1399
[MEMO]
5
Data Sheet D14770EJ2V0DS00
2SK1399
[MEMO]
6
Data Sheet D14770EJ2V0DS00
2SK1399
[MEMO]
7
Data Sheet D14770EJ2V0DS00
2SK1399
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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